公开(公告)号：US11143963B2

公开(公告)日：2021-10-12

申请号：US16719835

申请日：2019-12-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Wei-Han Lai ,  Tzu-Yang Lin ,  Ming-Hui Weng ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides NTD developers and corresponding lithography techniques that can overcome resolution, line edge roughness (LER), and sensitivity (RLS) tradeoff barriers particular to extreme ultraviolet (EUV) technologies, thereby achieving high patterning fidelity for advanced technology nodes. An exemplary lithography method includes forming a negative tone resist layer over a workpiece; exposing the negative tone resist layer to EUV radiation; and removing an unexposed portion of the negative tone resist layer in a negative tone developer, thereby forming a patterned negative tone resist layer. The negative tone developer includes an organic solvent having a log P value greater than 1.82. The organic solvent is an ester acetate derivative represented by R1COOR2. R1 and R2 are hydrocarbon chains having four or less carbon atoms. In some implementations, R1, R2, or both R1 and R2 are propyl functional groups, such as n-propyl, isopropyl, or 2-methylpropyl.

公开(公告)号：US10859915B2

公开(公告)日：2020-12-08

申请号：US16137742

申请日：2018-09-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Tzu-Yang Lin ,  Ya-Ching Chang ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/11 ,  G03F7/20 ,  G03F7/075 ,  H01L21/027 ,  H01L29/66 ,  H01L29/10 ,  H01L21/02 ,  G03F7/16 ,  H01L29/78

Abstract: A method is provided including forming a first layer over a substrate and forming an adhesion layer over the first layer. The adhesion layer has a composition including an epoxy group. A photoresist layer is formed directly on the adhesion layer. A portion of the photoresist layer is exposed to a radiation source. The composition of the adhesion layer and the exposed portion of the photoresist layer cross-link using the epoxy group. Thee photoresist layer is then developed (e.g., by a negative tone developer) to form a photoresist pattern feature, which may overlie the formed cross-linked region.

公开(公告)号：US10527941B2

公开(公告)日：2020-01-07

申请号：US15608631

申请日：2017-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ya-Ching Chang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/039 ,  G03F7/38 ,  G03F7/32 ,  G03F7/30

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.

公开(公告)号：US10177001B2

公开(公告)日：2019-01-08

申请号：US15169162

申请日：2016-05-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: H01L21/306 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/321

Abstract: Methods and materials for making a semiconductor device are described. The method includes forming a surface preparation layer over the semiconductor substrate. The surface preparation material layer includes an aziridine structure. A coating layer may then be deposited on the surface preparation material layer.

公开(公告)号：US10115592B2

公开(公告)日：2018-10-30

申请号：US15595525

申请日：2017-05-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/33 ,  H01L21/027 ,  H01L21/311

Abstract: A lithography method is provided in accordance with some embodiments. The lithography method includes forming an under layer on a substrate; forming a silicon-containing middle layer on the under layer, wherein the silicon-containing middle layer has a thermal base generator (TBG) composite; forming a photosensitive layer on the silicon-containing middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer, thereby forming a patterned photosensitive layer.

公开(公告)号：US09891528B2

公开(公告)日：2018-02-13

申请号：US15182160

申请日：2016-06-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/20 ,  G03F7/40 ,  G03F7/32 ,  G03F7/16

CPC classification number: G03F7/40 ,  G03F7/203 ,  G03F7/325 ,  G03F7/405

Abstract: A method of lithography patterning includes forming a resist layer over a substrate and providing a radiation with a first exposure dose to define an opening to be formed in the resist layer. The opening is to have a target critical dimension CD1 after developed by a negativ-tone development (NTD) process. The method further includes exposing the resist layer to the radiation with a second exposure dose less than the first exposure dose and developing the resist layer in a negative-tone development process to remove unexposed portions of the resist layer, resulting in an opening between resist patterns. A critical dimension CD2 of the opening is greater than CD1 by a delta. The method further includes forming an interfacial layer on sidewalls of the resist patterns. The interfacial layer has a thickness that is substantially equal to half of the delta.