公开(公告)号：US12300487B2

公开(公告)日：2025-05-13

申请号：US16559062

申请日：2019-09-03

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: H01L21/02 ,  G03F7/004 ,  G03F7/16

Abstract: A method of forming a photoresist pattern includes forming an upper layer including a floating additive polymer over a photoresist layer formed on a substrate. The photoresist layer is selectively exposed to actinic radiation. The photoresist layer is developed to form a pattern in the photoresist layer, and the upper layer is removed. The floating additive polymer is a siloxane polymer.

公开(公告)号：US12222654B2

公开(公告)日：2025-02-11

申请号：US17378507

申请日：2021-07-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/32 ,  G03F1/82 ,  G03F7/00 ,  G03F7/30 ,  G03F7/40

Abstract: A method includes illuminating radiation to a resist layer over a substrate to pattern the resist layer. The patterned resist layer is developed by using a positive tone developer. The patterned resist layer is rinsed using a basic aqueous rinse solution. A pH value of the basic aqueous rinse solution is lower than a pH value of the developer, and a rinse temperature of rinsing the patterned resist layer is in a range of about 20° C. to about 40° C.

公开(公告)号：US10747114B2

公开(公告)日：2020-08-18

申请号：US16549461

申请日：2019-08-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Siao-Shan Wang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/09 ,  H01L21/027 ,  G03F7/095 ,  G03F7/038 ,  G03F7/039 ,  G03F7/16 ,  G03F7/32 ,  G03F7/38 ,  G03F7/42 ,  G03F7/11

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a material layer on a substrate; forming a blocking layer on the material layer, wherein a bottom portion of the blocking layer reacts with the material layer, resulting in a capping layer that seals the material layer from an upper portion of the blocking layer. The method further includes forming a photoresist layer on the blocking layer; exposing the photoresist layer; and developing the photoresist layer, resulting in a patterned photoresist layer.

公开(公告)号：US20180348639A1

公开(公告)日：2018-12-06

申请号：US15608631

申请日：2017-05-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ya-Ching Chang ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/20 ,  G03F7/039 ,  G03F7/038 ,  G03F7/004 ,  G03F7/26 ,  G03F7/40

Abstract: The present disclosure provides a method for lithography patterning in accordance with some embodiments. The method includes forming a resist layer over a substrate and performing an exposing process to the resist layer. The resist layer includes a polymer backbone, an acid labile group (ALG) bonded to the polymer backbone, a sensitizer bonded to the polymer backbone, a photo-acid generator (PAG), and a thermo-base generator (TBG). The method further includes baking the resist layer at a first temperature and subsequently at a second temperature. The second temperature is higher than the first temperature. The method further includes developing the resist layer in a developer, thereby forming a patterned resist layer.

公开(公告)号：US20180149976A1

公开(公告)日：2018-05-31

申请号：US15697226

申请日：2017-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/09 ,  H01L21/027 ,  H01L21/67 ,  H01L21/02 ,  G03F7/16 ,  G03F7/20

Abstract: The present disclosure provides a method for lithography patterning. The method includes coating a bottom layer on a substrate, wherein the bottom layer includes a carbon-rich material; forming a middle layer on the bottom layer, wherein the middle layer has a composition such that its silicon concentration is enhanced to be greater than 42% in weight; coating a photosensitive layer on the middle layer; performing an exposing process to the photosensitive layer; and developing the photosensitive layer to form a patterned photosensitive layer.

公开(公告)号：US11754923B2

公开(公告)日：2023-09-12

申请号：US17214660

申请日：2021-03-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ya-Ching Chang ,  Chen-Yu Liu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: B05D1/00 ,  G03F7/16 ,  H01L21/67 ,  H01L21/02

CPC classification number: G03F7/16 ,  H01L21/6715 ,  H01L21/67017 ,  B05D1/005 ,  G03F7/162 ,  H01L21/02282

Abstract: In a method, a resist material is dispensed through a tube of a nozzle of a resist pump system on a wafer. The tube extends from a top to a bottom of the nozzle and has upper, lower, and middle segments. When not dispensing, the resist material is retracted from the lower and the middle segments, and maintained in the upper segment of the tube. When retracting, a first solvent is flown through a tip of the nozzle at the bottom of the nozzle to fill the lower segment of the tube with the first solvent and to produce a gap in the middle segment of the tube between the resist material and the first solvent. The middle segment includes resist material residues on an inner surface wall of the tube and vapor of the first solvent. The vapor of the first solvent prevents the resist material residues from drying.

公开(公告)号：US11681221B2

公开(公告)日：2023-06-20

申请号：US16681610

申请日：2019-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  H01L21/027 ,  G03F7/32 ,  G03F7/20

CPC classification number: G03F7/0046 ,  G03F7/16 ,  G03F7/2004 ,  G03F7/32 ,  H01L21/0274

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure:




The second ligands each have a following structure:




represents the core group. L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1˜6 carbon atoms saturated by H. L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L′″ together.

公开(公告)号：US11079681B2

公开(公告)日：2021-08-03

申请号：US16248601

申请日：2019-01-15

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Ming-Hui Weng ,  Chen-Yu Liu ,  Cheng-Han Wu ,  Ching-Yu Chang ,  Chin-Hsiang Lin

IPC: G03F7/40 ,  G03F7/30 ,  G03F7/32 ,  G03F7/20 ,  G03F1/82

Abstract: A lithography method includes forming a resist layer over a substrate. The resist layer is exposed to radiation. The exposed resist layer is developed using a developer that removes an exposed portion of the exposed resist layer, thereby forming a patterned resist layer. The patterned resist layer is rinsed using a basic aqueous rinse solution.

公开(公告)号：US11009796B2

公开(公告)日：2021-05-18

申请号：US16572286

申请日：2019-09-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hui Weng ,  An-Ren Zi ,  Ching-Yu Chang ,  Chin-Hsiang Lin ,  Chen-Yu Liu

IPC: G03F7/30 ,  G03F7/32 ,  H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3115 ,  G03F7/40

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and forming a resist layer over the material layer. The resist layer includes an inorganic material and an auxiliary. The inorganic material includes a plurality of metallic cores and a plurality of first linkers bonded to the metallic cores. The method includes exposing a portion of the resist layer. The resist layer includes an exposed region and an unexposed region. In the exposed region, the auxiliary reacts with the first linkers. The method also includes removing the unexposed region of the resist layer by using a developer to form a patterned resist layer. The developer includes a ketone-based solvent having a formula (a) or the ester-based solvent having a formula (b).

公开(公告)号：US20210063876A1

公开(公告)日：2021-03-04

申请号：US16681610

申请日：2019-11-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： An-Ren Zi ,  Chen-Yu Liu ,  Ching-Yu Chang

IPC: G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  H01L21/027

Abstract: A photoresist includes a core group that contains metal, and one or more first ligands or one or more second ligands attached to the core group. The first ligands each have a following structure: The second ligands each have a following structure: represents the core group. L′ represents a chemical that includes 0˜2 carbon atoms saturated by Hydrogen (H) or Fluorine (F). L represents a chemical that includes 1˜6 carbon atoms saturated by H or F. L″ represents a chemical that includes 1˜6 carbon atoms saturated by H. L′″ represents a chemical that includes 1˜6 carbon atoms saturated by H or F. Linker represents a chemical that links L″ and L′″ together.