公开(公告)号：US20180090370A1

公开(公告)日：2018-03-29

申请号：US15395310

申请日：2016-12-30

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chi-Cheng Hung ,  Ru-Gun Liu ,  Wei-Liang Lin ,  Ta-Ching Yu ,  Yung-Sung Yen ,  Ziwei Fang ,  Tsai-Sheng Gau ,  Chin-Hsiang Lin ,  Kuei-Shun Chen

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3115

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/31155

Abstract: Directional patterning methods are disclosed herein. An exemplary method includes performing a lithography process to form a pattered hard mask layer over a wafer, wherein the patterned hard mask layer includes a hard mask feature having an associated horizontally-defined characteristic; tuning an etching process to direct etching species in a substantially horizontal direction relative to a horizontal surface of the wafer, such that the etching process horizontally removes portions of the patterned hard mask layer, thereby modifying the horizontally-defined characteristic of the hard mask feature; and forming an integrated circuit feature that corresponds with the hard mask feature having the modified horizontally-defined characteristic. Horizontally-defined characteristic can include a length, a width, a line edge roughness, a line width roughness, a line end profile, other horizontally-defined characteristics, or combinations thereof. In some implementations, the directional patterning method disclosed herein can achieve oblique interconnects and/or slot (rectangular) via interconnects.

公开(公告)号：US20170271164A1

公开(公告)日：2017-09-21

申请号：US15197467

申请日：2016-06-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Huei Weng ,  Kuan-Hsin Lo ,  Wei-Liang Lin ,  Chi-Cheng Hung

IPC: H01L21/3065 ,  H01L21/033 ,  H01L21/027 ,  H01L21/306

CPC classification number: H01L21/3065 ,  H01L21/0274 ,  H01L21/0337 ,  H01L21/30604 ,  H01L21/31144

Abstract: A method includes providing a substrate; forming mandrel patterns over the substrate; and forming spacers on sidewalls of the mandrel patterns. The method further includes removing the mandrel patterns, thereby forming trenches that are at least partially surrounded by the spacers. The method further includes depositing a copolymer material in the trenches, wherein the copolymer material is directed self-assembling; and inducing microphase separation within the copolymer material, thereby defining a first constituent polymer surrounded by a second constituent polymer. The mandrel patterns have restricted sizes and a restricted configuration. The first constituent polymer includes cylinders arranged in a rectangular or square array.