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公开(公告)号:US20240351881A1
公开(公告)日:2024-10-24
申请号:US18357950
申请日:2023-07-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Dung-Yue SU , Pei-Cheng HSU , Huan-Ling LEE , Hsin-Chang LEE
IPC: C01B32/168 , C01B32/162 , G03F1/62
CPC classification number: C01B32/168 , C01B32/162 , G03F1/62 , C01B2202/08
Abstract: A method for forming a pellicle for an extreme ultraviolet lithography is provided. The method includes forming a pellicle membrane over a filter membrane and transfer the pellicle membrane from the filter membrane to a membrane border. Forming the pellicle membrane includes growing carbon nanotubes (CNTs) from in-situ formed metal catalyst particles in a first reaction zone of a reactor, each of the CNTs including a metal catalyst particle at a growing tip thereof, promoting formation of bundles of nanotubes from the individual CNTs in a second zone of the reactor downstream of the first reaction zone. The bundled CNTs are then collected on the filter membrane.
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公开(公告)号:US20220382148A1
公开(公告)日:2022-12-01
申请号:US17483302
申请日:2021-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Pei-Cheng HSU , Ping-Hsun LIN , Ta-Cheng LIEN , Hsin-Chang LEE
IPC: G03F7/004 , H01L21/033
Abstract: An extreme ultraviolet mask including a substrate, a reflective multilayer stack on the substrate and a multi-layer patterned absorber layer on the reflective multilayer stack is provided. Disclosed embodiments include an absorber layer that includes an alloy comprising ruthenium (Ru), chromium (Cr), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), tungsten (W) or palladium (Pd), and at least one alloying element. The at least one alloying element includes ruthenium (Ru), chromium (Cr), tantalum (Ta), platinum (Pt), gold (Au), iridium (Ir), titanium (Ti), niobium (Nb), rhodium (Rh), molybdenum (Mo), hafnium (Hf), boron (B), nitrogen (N), silicon (Si), zirconium (Zr) or vanadium (V). Other embodiments include a multi-layer patterned absorber structure with layers that include an alloy and an alloying element, where at least two of the layers of the multi-layer structure have different compositions.
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公开(公告)号:US20210200078A1
公开(公告)日:2021-07-01
申请号:US17083348
申请日:2020-10-29
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Hsin-Chang LEE , Pei-Cheng HSU , Ta-Cheng LIEN , Wen-Chang HSUEH
IPC: G03F1/24 , G03F1/54 , G03F1/20 , G03F1/48 , H01L21/033
Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.
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公开(公告)号:US20190101821A1
公开(公告)日:2019-04-04
申请号:US16012253
申请日:2018-06-19
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Pei-Cheng HSU , Ta-Cheng LIEN , Tzu Yi WANG , Hsin-Chang LEE
IPC: G03F1/66 , H01L21/673 , G03F7/20
Abstract: A mask container for storing a mask for photolithography, includes a cover and a base having a plurality of tapered corners. The tapered corners taper outward and downward from a top major surface of the base. The cover having the tapered corners extends downward that covers the tapered corners of the base when the cover is attached to the base. The tapered corners of the cover are tapered at about the same angle as the tapered corners of the base so that a surface of the tapered corners of the cover is substantially parallel to a corresponding surface of the tapered corner of the base when the cover is attached to the base. A recess is located in the tapered corners of the cover. A biasing member and a ball-shaped member are located in the tapered corners of the base to mate with the recess when the cover is attached to the base.
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