公开(公告)号：US20170301557A1

公开(公告)日：2017-10-19

申请号：US15099779

申请日：2016-04-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Chien Chi ,  Pei-Hsuan Lee ,  Hung-Wen Su

IPC: H01L21/321 ,  H01L21/768 ,  H01L21/027 ,  H01L21/311 ,  H01L21/288

CPC classification number: H01L21/3212 ,  H01L21/02087 ,  H01L21/0273 ,  H01L21/2885 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76879

Abstract: A method of fabricating a semiconductor device is disclosed. The method includes forming a dielectric layer over a substrate. The substrate has an edge region and a center region. The method also includes forming a dielectric ring in the edge region, forming a metal layer over the center region of the substrate and over the dielectric ring in the edge region of the substrate and polishing the metal layer in the center region and the edge region to expose the dielectric ring in the edge region of the substrate.