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公开(公告)号:US11462495B2
公开(公告)日:2022-10-04
申请号:US17077618
申请日:2020-10-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee
Abstract: A method includes forming integrated circuits on a front side of a first chip, performing a backside grinding on the first chip to reveal a plurality of through-vias in the first chip, and forming a first bridge structure on a backside of the first chip using a damascene process. The bridge structure has a first bond pad, a second bond pad, and a conductive trace electrically connecting the first bond pad to the second bond pad. The method further includes bonding a second chip and a third chip to the first chip through face-to-back bonding. A third bond pad of the second chip is bonded to the first bond pad of the first chip. A fourth bond pad of the third chip is bonded to the second bond pad of the first chip.
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公开(公告)号:US11139223B2
公开(公告)日:2021-10-05
申请号:US16655257
申请日:2019-10-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Chun-Hui Yu , Jeng-Nan Hung , Kuo-Chung Yee
IPC: H01L23/34 , H01L23/473 , H01L25/065 , H01L25/18 , H01L23/31 , H01L21/50 , H01L21/308
Abstract: A semiconductor package includes a semiconductor package, a cap, a seal, and microstructures. The semiconductor package includes at least one semiconductor die. The cap is disposed over an upper surface of the semiconductor package. The seal is located on the semiconductor package and between the cap and the semiconductor package. The cap includes an inflow channel and an outflow channel. The active surface of the at least one semiconductor die faces away from the cap. The cap and an upper surface of the semiconductor package define a circulation recess providing fluidic communication between the inflow channel and the outflow channel. The seal is disposed around the circulation recess. The microstructures are located within the circulation recess, and the microstructures are connected to at least one of the cap and the at least one semiconductor die.
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公开(公告)号:US20210202270A1
公开(公告)日:2021-07-01
申请号:US17205146
申请日:2021-03-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
IPC: H01L21/48 , H01L23/00 , H01L23/36 , H01L23/373 , H01L23/31 , H01L21/56 , H01L25/065 , H01L25/00
Abstract: A semiconductor package includes a wafer and at least one chip attached on first portions of an upper surface of the wafer. Further, the semiconductor package includes an insulating barrier layer, a thermally conductive layer, and a heat sink. The insulating barrier layer is arranged over the at least one chip attached on first portions of an upper surface of the wafer. The thermally conductive layer is arranged over the insulating barrier layer and at least partially encapsulates the at least one chip. The heat sink is arranged over the thermally conductive layer.
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公开(公告)号:US10971462B2
公开(公告)日:2021-04-06
申请号:US16869573
申请日:2020-05-07
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee
IPC: H01L23/538 , H01L23/66 , H01L23/31 , H01L23/00 , H01L21/48 , H01L21/56 , H01L21/78 , H01L25/065 , H01L25/00 , H01Q1/22 , H01L21/683 , H01Q21/00
Abstract: A package structure has a first die, a second die, the third die, a molding compound, a first redistribution layer, an antenna and conductive elements. The first die, the second die and the third die are molded in a molding compound. The first redistribution layer is disposed on the molding compound and is electrically connected to the first die, the second die and the third die. The antenna is located on the molding compound and electrically connected to the first die, the second die and the third die, wherein a distance of an electrical connection path between the first die and the antenna is smaller than or equal to a distance of an electrical connection path between the second die and the antenna and a distance of an electrical connection path between the third die and the antenna. The conductive elements are connected to the first redistribution layer, wherein the first redistribution layer is located between the conductive elements and the molding compound.
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35.
公开(公告)号:US10950554B2
公开(公告)日:2021-03-16
申请号:US16035711
申请日:2018-07-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
IPC: H01L23/552 , H01L25/065 , H01L23/31 , H01L23/498 , H01L23/00 , H01L25/00 , H01L21/56
Abstract: Semiconductor packages and methods of forming the same are provided. a semiconductor package includes a sub-package, a second die and a second molding layer. The sub-package includes a first die, a first molding layer aside the first die and a first redistribution layer structure disposed over the first die and the first molding layer and electrically connected to the first die. The second die is disposed over the sub-package, wherein the first die and the second die are disposed on opposite surfaces of the first redistribution layer structure. The second molding layer encapsulates the sub-package and the second die.
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公开(公告)号:US10770795B2
公开(公告)日:2020-09-08
申请号:US15245022
申请日:2016-08-23
Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Inventor: Chuei-Tang Wang , Chung-Hao Tsai , Jeng-Shien Hsieh , Wei-Heng Lin , Kuo-Chung Yee , Chen-Hua Yu
Abstract: An antenna device includes a package and at least one antenna. The package includes at least one radio frequency (RF) die and a molding compound in contact with at least one sidewall of the RF die. The antenna has at least one conductor at least partially in the molding compound and operatively connected to the RF die.
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37.
公开(公告)号:US20200020658A1
公开(公告)日:2020-01-16
申请号:US16578358
申请日:2019-09-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
IPC: H01L23/00 , H01L23/42 , H01L23/373
Abstract: The present disclosure, in some embodiments, relates to a method of forming a semiconductor package. The method may be performed by attaching a first thermal conductivity layer to an upper surface of a first chip, and attaching a second thermal conductivity layer to an upper surface of a second chip. A first support substrate is attached to lower surfaces of the first chip and the second chip. A molding compound is formed over the first support substrate and laterally surrounds the first chip and the second chip. The first support substrate is replaced with a package substrate after forming the molding compound over the first support substrate.
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公开(公告)号:US20200020640A1
公开(公告)日:2020-01-16
申请号:US16578403
申请日:2019-09-23
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chiang Wu , Chen-Hua Yu , Kuo-Chung Yee
IPC: H01L23/538 , H01L23/66 , H01L23/367 , H01L23/31 , H01L21/48 , H01L21/56 , H01L23/00 , H01Q1/22
Abstract: A package structure and the method thereof are provided. The package structure includes a conductive plate, a semiconductor die, a molding compound, and antenna elements. The conductive plate has a first surface, a second surface and a sidewall connecting the first surface and the second surface. The semiconductor die is located on the second surface of the conductive plate. The molding compound laterally encapsulates the semiconductor die and covers the sidewall and a portion of the second surface exposed by the semiconductor die, wherein the first surface of the conductive plate is coplanar with a surface of the molding compound. The antenna elements are located over the first surface of the conductive plate.
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公开(公告)号:US10515921B2
公开(公告)日:2019-12-24
申请号:US16022704
申请日:2018-06-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chen-Hua Yu , Kuo-Chung Yee , Chun-Hui Yu
IPC: H01L23/52 , H01L23/00 , H01L23/48 , H01L23/31 , H01L25/065 , H01L23/538
Abstract: A semiconductor package has at least one die, a first redistribution layer and a second redistribution layer. The first redistribution layer includes a first dual damascene redistribution pattern having a first via portion and a first routing portion. The second redistribution layer is disposed on the first redistribution layer and over the first die and electrically connected with the first redistribution layer and the first die. The second redistribution layer includes a second dual damascene redistribution pattern having a second via portion and a second routing portion. A location of the second via portion is aligned with a location of first via portion.
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40.
公开(公告)号:US10510707B2
公开(公告)日:2019-12-17
申请号:US15966426
申请日:2018-04-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Hao Tseng , Ying-Hao Kuo , Kuo-Chung Yee
IPC: H01L23/42 , H01L23/00 , H01L23/373
Abstract: A method of forming a semiconductor package includes attaching a thermal conductivity layer to a chip. The chip has a first surface and a second surface. The thermal conductivity layer is attached to the first surface of the chip. The thermal conductivity layer provides a path through which heat generated from the chip is dissipated to the ambient. A substrate is attached to the second surface of the chip after attaching the thermal conductivity layer to the chip. A molding compound is formed to encapsulate the chip and the thermal conductivity layer.
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