公开(公告)号：USD458903S1

公开(公告)日：2002-06-18

申请号：US29145359

申请日：2001-07-23

申请人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Hiroshi Nakagawa

设计人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Hiroshi Nakagawa

公开(公告)号：US06393892B1

公开(公告)日：2002-05-28

申请号：US09604652

申请日：2000-06-27

申请人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai

发明人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai

IPC分类号： G01N330

CPC分类号： H01M2/345 ,  G01P15/06 ,  H01H35/146 ,  H01M2/1235 ,  H01M2/34 ,  H01M2200/20

摘要： To attain an impact sensor designed compact and to be readily assembled. The impact sensor comprises main part 100 of sensor involving cavity 110, of which bottom surface serves as the fracture part 120; impact force transfer member 130 provided on said fracture part 120; weight 200 being confined in said cavity 110; and seal member 300 to close the cavity 110 with the weight 200 left confined therein, whereby the fracture part 120 is apt to be broken up by the weight 200, when an impact exceeding the predetermined value has been encountered.

摘要翻译： 为了获得设计紧凑的冲击传感器并易于组装。冲击传感器包括涉及空腔110的传感器的主要部分100，其底面用作断裂部分120; 设置在所述断裂部120上的冲击力传递部件130; 重量200被限制在所述空腔110中; 以及密封构件300，其中重物200被限制在其中以关闭空腔110，由此当遇到超过预定值的冲击时，断裂部分120容易被重物200分解。

公开(公告)号：US07486369B2

公开(公告)日：2009-02-03

申请号：US11697583

申请日：2007-04-06

申请人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

发明人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

IPC分类号： G02F1/1339

CPC分类号： G02F1/1341 ,  G02F1/13394

摘要： A liquid crystal display having an injection hole post structures compatible with liquid crystal are formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the occurrence of picture quality trouble which easily occurs in the display area. The liquid crystal display includes a first substrate 11 and a second substrate 12 which are disposed with a predetermined gap therebetween, in which liquid crystal is sealed in the gap. The liquid crystal display further includes: post structures for controlling the gap; a sealing material provided outside the display for sealing the liquid crystal in the gap, and forming the open injection hole for injecting the liquid crystal therethrough; the end-sealing material 16 for sealing the injection hole after the liquid crystal is sealed in; and injection hole post structures provided in the area near the injection hole, for dividing the injection hole 15 into a plurality of portions by using the same material as the post structures.

摘要翻译： 在喷射孔附近形成具有与液晶相容的喷射孔柱结构的液晶显示装置，以防止端面密封材料渗透的污染物渗透到显示区域，从而可以容易地抑制图像质量问题的发生 发生在显示区域。 液晶显示器包括第一基板11和第二基板12，第一基板11和第二基板12间隔开预定间隙，液晶密封在间隙中。 液晶显示器还包括：用于控制间隙的柱结构; 设置在显示器外部的密封材料，用于将间隙中的液晶密封，并形成用于将液晶注入的开放注入孔; 用于在液晶密封之后密封注入孔的端密封材料16; 以及设置在喷射孔附近的区域中的喷射孔柱结构，通过使用与柱结构相同的材料将喷射孔15分割成多个部分。

公开(公告)号：US07077875B2

公开(公告)日：2006-07-18

申请号：US11050683

申请日：2005-02-07

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： H01L21/00 ,  H01L21/64

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

摘要翻译： 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

公开(公告)号：US06927144B2

公开(公告)日：2005-08-09

申请号：US10708593

申请日：2004-03-12

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： C30B29/36 ,  H01L21/02 ,  H01L21/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： Provided is a manufacturing method of a buried insulating layer type semiconductor silicon carbide substrate excellent in flatness of an interfaces in contact the insulating layer and a manufacturing device thereof. In the manufacturing device, an SOI substrate having a buried insulating layer positioned on a silicon substrate and a surface silicon layer formed on this buried insulating layer is placed in this film formation chamber. The manufacturing device includes: the film formation chamber in which the SOI substrate is placed; a gas supplying unit for supplying various types of gasses required for the manufacturing of a buried insulating layer type semiconductor silicon carbide substrate into the film formation chamber; an infrared ray irradiating unit for irradiating the surface silicon layer of the SOI substrate with infrared rays; and a control part for controlling the gas supplying unit and the infrared ray irradiating unit.

摘要翻译： 提供一种绝缘层与其制造装置接触的界面的平坦度优异的掩埋绝缘层型半导体碳化硅基板的制造方法。 在制造装置中，在该成膜室中配置具有位于硅衬底上的埋入绝缘层和形成在该埋置绝缘层上的表面硅层的SOI衬底。 制造装置包括：成膜室，其中放置SOI基板; 气体供给单元，用于将掩模绝缘层型半导体碳化硅基板的制造所需的各种气体供给到成膜室中; 红外线照射单元，其用红外线照射SOI衬底的表面硅层; 以及用于控制气体供给单元和红外线照射单元的控制部。

公开(公告)号：US06773508B2

公开(公告)日：2004-08-10

申请号：US10159111

申请日：2002-06-03

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Fumihiko Jobe

IPC分类号： C30B2504

CPC分类号： C30B25/02 ,  C30B29/36

摘要： To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.

摘要翻译： 经济地制造单晶碳化硅薄膜。 用于制造单晶碳化硅薄膜的装置包括适于接收用于成膜的SOI衬底100的成膜室200，用于供应制造单晶碳化硅所需的各种气体G1至G4的气体供给装置300 薄膜形成室200，用于处理氩气作为惰性气体G1的气体处理装置500，作为烃类气体G2的丙烷气体，作为载气的氢气和供给到膜的氧气G4 以及用于控制成膜室200的温度的温度控制装置400。

公开(公告)号：US06475001B2

公开(公告)日：2002-11-05

申请号：US10020677

申请日：2001-10-30

申请人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Hiroshi Nakagawa

发明人： Yoshiaki Ohbayashi ,  Keiji Mine ,  Hiroshi Nakagawa

IPC分类号： H01R1200

CPC分类号： G02B6/4201 ,  G02B6/3897 ,  G02B6/4256 ,  G02B6/428 ,  G02B6/4292 ,  H05K3/341

摘要： A metal cover 21 is mounted on the rear end side of a body 11 to cover its top, both side surfaces and read end face, and the metal cover 21 has a pair of soldering portions 25, which are soldered to a circuit board so that the body 11 is pressed and fixed to the circuit board.

摘要翻译： 金属盖21安装在主体11的后端侧以覆盖其顶部，两个侧表面和读取端面，并且金属盖21具有焊接到电路板的一对焊接部25，使得 主体11被按压并固定到电路板。

公开(公告)号：US07393763B2

公开(公告)日：2008-07-01

申请号：US11055985

申请日：2005-02-14

申请人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

发明人： Katsutoshi Izumi ,  Motoi Nakao ,  Yoshiaki Ohbayashi ,  Keiji Mine ,  Seisaku Hirai ,  Fumihiko Jobe ,  Tomoyuki Tanaka

IPC分类号： H01L21/36

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0254 ,  H01L21/02639

摘要： There is provided a monocrystalline gallium nitride localized substrate suitable for manufacturing electronic-optical united devices in which electronic devices and optical devices are mixedly mounted on the same silicon substrate.An area in which monocrystalline gallium nitride 410 is grown is locally present on a silicon substrate 100 by forming silicon carbide 200 on the silicon substrate 100 to locally form the monocrystalline gallium nitride 410 on the above-mentioned silicon carbide 200. Silicon nitride 220 is used as a mask in forming the above-mentioned monocrystalline gallium nitride 410.

摘要翻译： 提供了适用于制造电子器件和光学器件混合安装在同一硅衬底上的电子 - 光学联合器件的单晶氮化镓局部衬底。 单晶氮化镓410生长的区域通过在硅衬底100上形成碳化硅200而在硅衬底100上局部存在，以在上述碳化硅200上局部形成单晶氮化镓410。 在形成上述单晶氮化镓410时，使用氮化硅220作为掩模。

公开(公告)号：US20070211203A1

公开(公告)日：2007-09-13

申请号：US11697583

申请日：2007-04-06

申请人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

发明人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

IPC分类号： G02F1/1339

CPC分类号： G02F1/1341 ,  G02F1/13394

摘要： A liquid crystal display having an injection hole post structures compatible with liquid crystal are formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the occurrence of picture quality trouble which easily occurs in the display area. The liquid crystal display includes a first substrate 11 and a second substrate 12 which are disposed with a predetermined gap therebetween, in which liquid crystal is sealed in the gap. The liquid crystal display further includes: post structures for controlling the gap; a sealing material provided outside the display for sealing the liquid crystal in the gap, and forming the open injection hole for injecting the liquid crystal therethrough; the end-sealing material 16 for sealing the injection hole after the liquid crystal is sealed in; and injection hole post structures provided in the area near the injection hole, for dividing the injection hole 15 into a plurality of portions by using the same material as the post structures.

摘要翻译： 在喷射孔附近形成具有与液晶相容的喷射孔柱结构的液晶显示装置，以防止端面密封材料渗透的污染物渗透到显示区域，从而抑制容易产生图像质量问题 发生在显示区域。 液晶显示器包括第一基板11和第二基板12，第一基板11和第二基板12间隔开预定间隙，液晶密封在间隙中。 液晶显示器还包括：用于控制间隙的柱结构; 设置在显示器外部的密封材料，用于将间隙中的液晶密封，并形成用于将液晶注入的开放注入孔; 用于在液晶密封之后密封注入孔的端密封材料16; 以及设置在喷射孔附近的区域中的喷射孔柱结构，通过使用与柱结构相同的材料将喷射孔15分割成多个部分。

公开(公告)号：US07202932B2

公开(公告)日：2007-04-10

申请号：US09767588

申请日：2001-01-23

申请人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

发明人： Hiroshi Niwa ,  Hidefumi Yamashita ,  Tatsushi Koike ,  Yoshiaki Ohbayashi

IPC分类号： G02F1/1339 ,  G02F1/1341

CPC分类号： G02F1/1341 ,  G02F1/13394

摘要： A liquid crystal display comprises an injection hole post structures compatible with liquid crystal formed in an area near an injection hole to prevent pollutants seeped from an end-sealing material from penetrating into a display area, thereby suppressing the deterioration of picture quality in the display area. The liquid crystal display comprises a first substrate and a second substrate having a predetermined gap therebetween. Liquid crystal is sealed in the gap. The liquid crystal display comprises post structures for controlling the gap, and a sealing material provided outside the display area for sealing the liquid crystal in the gap, and forming the open injection hole for injecting the liquid crystal therethrough. The end-sealing material seals the injection hole after the liquid crystal is sealed. Injection hole post structures are provided in the area near the injection hole, for dividing the injection hole into a plurality of portions.

摘要翻译： 液晶显示器包括与在喷射孔附近形成的液晶相容的喷射孔柱结构，以防止端部密封材料渗透的污染物渗透到显示区域，从而抑制显示区域中的图像质量的劣化 。 液晶显示器包括第一基板和在其间具有预定间隙的第二基板。 液晶密封在间隙中。 液晶显示器包括用于控制间隙的柱结构，以及设置在显示区域外部的用于将液晶密封在间隙中的密封材料，以及形成用于将液晶注入的开放注入孔。 在密封液晶之后，端密封材料密封注射孔。 喷射孔柱结构设置在喷射孔附近的区域中，用于将喷射孔分成多个部分。