公开(公告)号：US20120139589A1

公开(公告)日：2012-06-07

申请号：US13306265

申请日：2011-11-29

申请人： Osamu Machida ,  Hironori Aoki

发明人： Osamu Machida ,  Hironori Aoki

IPC分类号： G05F1/10

CPC分类号： H03K17/0822 ,  H02M1/32 ,  H02M1/36 ,  H02M3/33507

摘要： A gate driver for driving a gate of a switching element Tr7 includes a driving part that drives the switching element according to a control signal and an active clamp circuit to clamp the voltage between the first and second main terminals of the switching element through the driving part. If a voltage applied between a first main terminal (drain) and a second main terminal (source) of the switching element exceeds a predetermined voltage, the active clamp circuit forcibly blocks a driving operation of the driving part from driving the switching element.

摘要翻译： 用于驱动开关元件Tr7的栅极的栅极驱动器包括驱动部件，其根据控制信号驱动开关元件和有源钳位电路，以通过驱动部分钳位开关元件的第一和第二主端子之间的电压 。 如果施加在开关元件的第一主端子（漏极）和第二主端子（源极）之间的电压超过预定电压，则有源钳位电路强制地阻止驱动部分的驱动操作来驱动开关元件。

公开(公告)号：US20120080724A1

公开(公告)日：2012-04-05

申请号：US13251563

申请日：2011-10-03

申请人： Akio Iwabuchi ,  Hironori Aoki

发明人： Akio Iwabuchi ,  Hironori Aoki

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42316

摘要： A semiconductor device includes a first semiconductor layer, a second semiconductor layer, a two-dimensional carrier gas layer, a first main electrode, a second main electrode, a first gate electrode, and a second gate electrode. The first gate electrode is provided between a part of the first main electrode and a part of the second main electrode opposite to the part of the first main electrode. The second gate electrode is provided between another part of the first main electrode and another part of the second main electrode opposite to the another part of the first main electrode with a separation region interposed between the first gate electrode and the second gate electrode. The second gate electrode is controlled independently of the first gate electrode.

摘要翻译： 半导体器件包括第一半导体层，第二半导体层，二维载气层，第一主电极，第二主电极，第一栅电极和第二栅电极。 第一栅电极设置在第一主电极的一部分和与第一主电极的一部分相对的第二主电极的一部分之间。 第二栅电极设置在第一主电极的另一部分和第二主电极的与第一主电极的另一部分相对的另一部分之间，并且分隔区置于第一栅电极和第二栅电极之间。 第二栅极电极独立于第一栅电极被控制。

公开(公告)号：US20120056648A1

公开(公告)日：2012-03-08

申请号：US13223986

申请日：2011-09-01

申请人： Akio IWABUCHI ,  Hironori Aoki

发明人： Akio IWABUCHI ,  Hironori Aoki

IPC分类号： H03K17/06 ,  H01L23/544

CPC分类号： H01L29/7787 ,  H01L27/0605 ,  H01L29/2003 ,  H01L2924/0002 ,  H03K17/0822 ,  H01L2924/00

摘要： The operation of a HEMT is monitored on an on-chip basis without increasing the power consumption rate. In a semiconductor device 10, an electron supply layer 12 is formed on a channel layer 11. A two-dimensional electron gas (2DEG) layer 13 is formed at the side of the channel layer of the hetero-junction interface. Electrons flow through the 2DEG layer 13 between a source electrode 14 formed on the surface of the electron supply layer 12 and a drain electrode 15 that is formed on the same surface. A potential detection electrode 17 is arranged on the electron supply layer 12 between the gate electrode 16 and the source electrode 14. A resistor 18 having a sufficiently high resistance value makes the electric current flowing to the potential detection electrode 17 negligible relative to the drain current in operation.

摘要翻译： HEMT的操作在片上进行监控，而不增加功耗率。 在半导体装置10中，电子供给层12形成在沟道层11上。在异质结界面的沟道层侧形成二维电子气（2DEG）层13。 电子在形成在电子供给层12的表面上的源电极14和形成在同一表面上的漏电极15之间流过2DEG层13。 在栅电极16和源电极14之间的电子供给层12上配置有电位检测电极17.具有足够高的电阻值的电阻18使得流到电位检测电极17的电流相对于漏极电流可忽略不计 在运行。

公开(公告)号：US07671957B2

公开(公告)日：2010-03-02

申请号：US11766494

申请日：2007-06-21

申请人： Hironori Aoki ,  Akio Nakayama ,  Manabu Tanahara

发明人： Hironori Aoki ,  Akio Nakayama ,  Manabu Tanahara

IPC分类号： G02F1/1333

CPC分类号： G02F1/1345 ,  G02F1/136259 ,  G02F2001/13456 ,  G02F2201/50 ,  G09G2320/0209

摘要： A TFT array substrate of a display device according to an embodiment of the present invention includes: a plurality of scanning signal lines formed in a display region; a plurality of display signal lines formed in the display region; a plurality of TFTs arraigned in matrix in the display region; a plurality of scanning lead-out lines arranged in a frame region formed outside the display region in accordance with the scanning signal lines; a gate insulating film formed on the plurality of scanning lead-out lines; and a first conductive layer formed on the gate insulating film and applied with a predetermined potential, the first conductive layer being formed to cover the plurality of scanning lead-out lines outside the sealing material.

摘要翻译： 根据本发明实施例的显示装置的TFT阵列基板包括：形成在显示区域中的多条扫描信号线; 形成在显示区域中的多个显示信号线; 在显示区域中以矩阵形式呈现的多个TFT; 多个扫描引出线，布置在根据扫描信号线形成在显示区域外部的框架区域中; 形成在所述多个扫描导出线上的栅极绝缘膜; 以及形成在所述栅极绝缘膜上并施加预定电位的第一导电层，所述第一导电层被形成为覆盖所述密封材料外部的所述多个扫描引出线。

公开(公告)号：US06524949B2

公开(公告)日：2003-02-25

申请号：US10003192

申请日：2001-10-29

申请人： Shuichi Kaneko ,  Hironori Aoki ,  Akio Iwabuchi

发明人： Shuichi Kaneko ,  Hironori Aoki ,  Akio Iwabuchi

IPC分类号： H01L214763

CPC分类号： H01L21/76804

摘要： There is formed on a semiconductor substrate a lamination of a first insulating film of nondoped silicon glass or the like and, on this first insulating film, a second insulating film of boron phosphor silicate glass or the like, with a conductor layer between the two insulating films. A hole is first dry-etched in the second insulating film, leaving the substrate surface covered by the first insulating film. Then the second insulating film is heated to a reflow temperature such that the hole is thermally deformed, flaring as it extends away from the insulating film. Then a second hole is dry-etched in the first insulating film through the first recited hole in the second insulating film, with the consequent exposure of the semiconductor surface. Then a contract electrode is fabricated by filling the first and the second hole with an electroconductive material into direct contact with the substrate surface. Being covered by the first insulating film, the substrate surface is not to be contaminated with impurities during the heating of the second insulating film.

公开(公告)号：US06515646B2

公开(公告)日：2003-02-04

申请号：US09353833

申请日：1999-07-15

申请人： Susumu Tokonami ,  Susumu Shibata ,  Hironori Aoki ,  Shingo Nagano

发明人： Susumu Tokonami ,  Susumu Shibata ,  Hironori Aoki ,  Shingo Nagano

IPC分类号： G09G336

CPC分类号： G09G3/3614 ,  G09G3/3655 ,  G09G3/3659 ,  G09G2320/0233

摘要： The present invention is directed to a liquid crystal display apparatus including: a timing circuit for operating a shift register within a timing circuit during a vertical blanking period such that a common signal that has been alternated at a cycle of a Single Horizontal period is applied on counter electrodes during the vertical blanking period and such that a storage electrode signal is applied on storage electrodes having a frequency, phase and amplitude identical to those of the common signal.

摘要翻译： 本发明涉及一种液晶显示装置，包括：定时电路，用于在垂直消隐期间操作定时电路内的移位寄存器，使得以单个水平周期的周期交替的公共信号被施加到 并且使得存储电极信号被施加在具有与公共信号的频率，相位和幅度相同的频率，相位和幅度的存储电极上。

公开(公告)号：US06504581B1

公开(公告)日：2003-01-07

申请号：US09318726

申请日：1999-05-26

申请人： Miyuki Hirosue ,  Naoki Nakagawa ,  Hironori Aoki

发明人： Miyuki Hirosue ,  Naoki Nakagawa ,  Hironori Aoki

IPC分类号： G02F113

CPC分类号： G03F7/70475 ,  G02F1/1362 ,  G02F2001/13625

摘要： Method for manufacturing a liquid crystal display apparatus including: a TFT array substrate having a plurality of scanning lines formed on a transparent insulating substrate by a metal film, a plurality of data lines formed on or beneath the scanning lines so as to be separated by an insulating film in such a manner as to intersect the scanning lines, switching elements that are formed by a semiconductor layer at respective intersections between the scanning lines and the data lines, and pixel electrodes that are formed by a transparent conductive film and electrically connected to the switching elements; and a counter substrate provided with a liquid crystal interposed between the TFT array substrate and the counter substrate; wherein a divisional exposing method is adopted as a patterning method on the TFT array substrate, so that adjacent exposing areas within a display area of the liquid crystal display apparatus have overlapped portions with each other, and so that a shot layout is defined in such a manner that, within the overlapped exposing areas; wherein the portion which comes closer to a predetermined shot area is subjected to a greater distribution of the shot.

摘要翻译： 一种液晶显示装置的制造方法，包括：TFT阵列基板，其具有通过金属膜在透明绝缘基板上形成的多条扫描线，形成在扫描线上或下方的多条数据线，以由 以与扫描线相交的方式设置绝缘膜，在扫描线和数据线之间的各个交点处由半导体层形成的开关元件以及由透明导电膜形成并与其电连接的像素电极 开关元件; 以及设置在TFT阵列基板和对置基板之间的液晶的对置基板; 在TFT阵列基板上采用分割曝光方法作为图案化方法，使得液晶显示装置的显示区域内的相邻曝光区域彼此具有重叠部分，并且以这样的方式限定拍摄布局 在重叠的暴露区域内的方式; 其中靠近预定照射区域的部分经受更大的镜头分布。

公开(公告)号：US5650834A

公开(公告)日：1997-07-22

申请号：US363030

申请日：1994-12-23

申请人： Naoki Nakagawa ,  Hironori Aoki ,  Hiroaki Shimaya

发明人： Naoki Nakagawa ,  Hironori Aoki ,  Hiroaki Shimaya

IPC分类号： G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G02F1/1343

CPC分类号： G02F1/136204

摘要： An active-matrix substrate including a transparent insulative substrate, thin film transistors arranged in a matrix pattern on the transparent substrate, pixel electrodes each connected to a drain electrode of each of the thin film transistors, a plurality of gate lines each adapted to supply a signal to a gate electrode of each of the thin film transistors, a plurality of source signal lines intersecting the plurality of gate lines and each adapted to supply a signal to a source electrode of each of the thin film transistors, a shortcircuiting ring for shortcircuiting each of the signal lines at the periphery of the transparent insulative substrate, and a thin film resistor having a resistance of 10 k.OMEGA. to 500 k.OMEGA. provided intermediate between an input terminal of each of the signal lines and the shortcircuiting ring.

摘要翻译： 一种有源矩阵基板，包括透明绝缘基板，在透明基板上以矩阵图案排列的薄膜晶体管，各自连接到每个薄膜晶体管的漏电极的像素电极，多个栅极线，每个栅极线适于提供 信号到每个薄膜晶体管的栅电极，与多条栅极线相交并且各自适于向每个薄膜晶体管的源电极提供信号的多条源极信号线，用于短路每个薄膜晶体管的短路环 的透明绝缘性基板的周边的信号线，以及在每条信号线的输入端子与短路环之间设置有电阻为10kΩ〜500kΩ的电阻的薄膜电阻器。