公开(公告)号：US20180301482A1

公开(公告)日：2018-10-18

申请号：US15570374

申请日：2017-05-18

申请人： Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.

发明人： Sikun Hao

IPC分类号： H01L27/12 ,  G02F1/1343 ,  G02F1/1362

CPC分类号： H01L27/1288 ,  G02F1/134363 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/136286 ,  G02F2001/13625 ,  G02F2201/121 ,  H01L27/124

摘要： The present invention involves an array substrate structure and a manufacturing method of an array substrate. The manufacturing method of an array substrate, which comprises: Step 1, a substrate is provided, a first metal layer is manufactured on the substrate, and the first metal layer is patterned with a first photo-mask, to manufacture a gate electrode. Step 2, a gate insulating layer is manufactured on the substrate; an active layer is manufactured with a second photo-mask. Step 3, a first via is formed in the gate insulating layer corresponding to the first metal layer with a third photo-mask. Step 4, a second metal layer is manufactured on the gate insulating layer, the second metal layer is patterned with a fourth photo-mask, to manufacture source/drain electrodes, and a second via is formed on where corresponding to the active layer, the first metal layer and the second metal layer are connected at the first via. Step 5, a pixel electrode is manufactured with a fifth photo-mask, the pixel electrode and the source/drain electrodes are directly connected at the second via; the second metal layer is covered and protected by the pixel electrode. The present invention also provides a corresponding array substrate structure. The invention can enhance the aperture ratio of the pixel at high-resolution and the display effect and quality of the liquid crystal display and improve the electrical characteristics of the panel.

公开(公告)号：US20170170214A1

公开(公告)日：2017-06-15

申请号：US15443028

申请日：2017-02-27

申请人： BOE Technology Group Co., Ltd.

发明人： Chunping Long ,  Jang Soon Im ,  Chien Hung Liu

IPC分类号： H01L27/12 ,  H01L21/266 ,  H01L21/265 ,  H01L29/66 ,  H01L29/786

CPC分类号： H01L27/1288 ,  G02F1/134363 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13625 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/77 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78675

摘要： An array substrate, a manufacturing method thereof, a display device, a thin-film transistor (TFT) and a manufacturing method thereof are disclosed. The method for manufacturing the TFT comprises: forming a pattern of an active layer and a gate insulating layer provided with a metal film on a base substrate; patterning the metal film by one patterning process, and forming patterns of a gate electrode, a source electrode, a drain electrode, a gate line and a data line; forming a passivation layer on the base substrate; patterning the passivation layer by one patterning process, and forming a source contact hole, a drain contact hole and a bridge structure contact hole; and forming a transparent conductive film on the base substrate, and removing partial transparent conductive film to form a source contact portion, a drain contact portion (214), a pixel electrode and a bridge structure. The manufacturing method can reduce the number of the patterning processes.

公开(公告)号：US09620537B2

公开(公告)日：2017-04-11

申请号：US15188936

申请日：2016-06-21

申请人： BOE TECHNOLOGY GROUP CO., LTD. ,  CHENGDU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Yanxia Xin ,  Seungyik Park ,  Tianlei Shi

IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392 ,  B05B15/04 ,  G02F1/1333 ,  G03F1/00 ,  G02F1/1343 ,  C23C16/04 ,  G02F1/1368 ,  G02F1/1362

CPC分类号： H01L27/1288 ,  B05B12/20 ,  C23C16/042 ,  G02F1/1333 ,  G02F1/133351 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1368 ,  G02F2001/13625 ,  G02F2201/121 ,  G02F2201/123 ,  G03F1/00 ,  H01L27/1214

摘要： The present disclosure provides a display substrate and a mask plate, the display substrate comprising a plurality of sub display substrates, each of the sub display substrates comprising a plurality of pixel units, each pixel unit comprising a pixel electrode, a common electrode and a source-drain channel, wherein, from the center of the display substrate to the edge of the display substrate, the plurality of sub display substrates are arranged from large to small according to the overlapping area of the pixel electrode and the common electrode and/or the plurality of sub display substrates are arranged from small to large according to the width to length ratio of the source-drain channel of the sub display substrate. The present disclosure can avoid electrical badness of the sub display substrates located at the edges.

公开(公告)号：US20160343749A1

公开(公告)日：2016-11-24

申请号：US14433663

申请日：2015-01-28

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Zuyou YANG

IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/02

CPC分类号： H01L27/1296 ,  G02F1/1333 ,  G02F2001/13625 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/31055 ,  H01L21/77 ,  H01L27/12 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1262 ,  H01L27/1288 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： The present invention discloses a LTPS TFT pixel unit and a manufacture method thereof. The method comprises steps of: providing a substrate and forming a buffer layer on the substrate; forming a semiconductor pattern layer and a first insulative layer on the buffer layer, and the semiconductor pattern layer and the first insulative layer are located in the same layer and heights of the semiconductor pattern layer and the first insulative layer are the same. With the aforesaid arrangement, the present invention can reduce the side effect of the LTPS TFT pixel unit and promote the electrical property thereof.

摘要翻译： 本发明公开了一种LTPS TFT像素单元及其制造方法。 该方法包括以下步骤：提供衬底并在衬底上形成缓冲层; 在缓冲层上形成半导体图形层和第一绝缘层，半导体图案层和第一绝缘层位于同一层中，并且半导体图案层和第一绝缘层的高度相同。 通过上述结构，本发明可以降低LTPS TFT像素单元的副作用并提高其电性能。

公开(公告)号：US20160252790A1

公开(公告)日：2016-09-01

申请号：US14390656

申请日：2014-07-11

申请人： SHENZHEN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

发明人： Li CHAI

IPC分类号： G02F1/1362 ,  G02F1/1333 ,  G02F1/1335 ,  H01L29/786 ,  H01L21/027 ,  H01L21/311 ,  H01L29/66 ,  G02F1/1368 ,  H01L27/12

CPC分类号： G02F1/136286 ,  G02F1/1333 ,  G02F1/133345 ,  G02F1/133514 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G02F2001/13625 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/77 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

摘要： An array substrate manufacturing method, an array substrate formed by the method, and a liquid crystal apparatus are disclosed. The method includes steps of depositing a first metal layer to form a plurality of scanning lines; depositing a first insulating layer and performing a patterning process on the first insulating layer; depositing a semiconductor layer and a second metal layer to form a plurality of data lines and thin-film transistors; depositing a second insulating layer to form a plurality of contact holes; and depositing a transparent layer to form a plurality of pixel electrodes.

摘要翻译： 公开了阵列基板制造方法，通过该方法形成的阵列基板和液晶装置。 该方法包括沉积第一金属层以形成多条扫描线的步骤; 在所述第一绝缘层上沉积第一绝缘层并执行图案化工艺; 沉积半导体层和第二金属层以形成多个数据线和薄膜晶体管; 沉积第二绝缘层以形成多个接触孔; 以及沉积透明层以形成多个像素电极。

公开(公告)号：US09366932B2

公开(公告)日：2016-06-14

申请号：US14234340

申请日：2013-10-21

申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd.

发明人： Li Chai

IPC分类号： G02F1/1333 ,  G02F1/1368 ,  G02F1/1362

CPC分类号： G02F1/1368 ,  G02F2001/13625

摘要： The present invention teaches a TFT-LCD array substrate manufacturing method: a) forming a gate electrode, a gate electrode insulator layer, an active layer, a source electrode and a drain electrode, a passivation layer, and a passivation layer via on top of the drain electrode on a glass substrate; b) depositing an ITO film on the glass substrate processed by the step a), removing through exposure and development the photo resist in a TFT area outside the passivation layer via and a part of the photo resist in a pixel area where gaps are to be formed, and revealing the ITO film outside the passivation layer via in the TFT area; c) removing a remaining photo resist in the pixel area where gaps are to be formed using a fourth dry etch, so that the ITO film on the gaps to be formed is revealed; d) removing the revealed ITO film using a third wet etch; and e) peeling the photo resist not yet removed, and forming an ITO electrode that is connected to the passivation layer via. The present invention also teaches a LCD panel and a LCD device having a TFT-LCD array substrate manufactured by foregoing method.

摘要翻译： 本发明教导了TFT-LCD阵列基板的制造方法：a）在栅电极，栅电极绝缘体层，有源层，源电极和漏电极，钝化层和钝化层之上形成栅电极， 玻璃基板上的漏电极; b）在通过步骤a）处理的玻璃基板上沉积ITO膜，通过在钝化层外部的TFT区域中的光致抗蚀剂和一部分光刻胶在要间隙的像素区域中曝光和显影来去除 在TFT区域中形成并露出钝化层通孔外的ITO膜; c）使用第四干蚀刻去除要形成间隙的像素区域中剩余的光致抗蚀剂，从而显现要形成的间隙上的ITO膜; d）使用第三次湿蚀刻去除所揭示的ITO膜; 以及e）剥离尚未除去的光致抗蚀剂，以及形成连接到钝化层通孔的ITO电极。 本发明还教导了具有通过上述方法制造的TFT-LCD阵列基板的LCD面板和LCD装置。

公开(公告)号：US09128313B2

公开(公告)日：2015-09-08

申请号：US14104032

申请日：2013-12-12

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Seung Bo Shim ,  Jun Gi Kim ,  Yang-Ho Jung ,  Jin Ho Ju ,  Jun Hong Park

IPC分类号： H01L21/3205 ,  G02F1/1333 ,  H01L27/12

CPC分类号： G02F1/1333 ,  G02F1/136209 ,  G02F2001/13625 ,  H01L27/1288 ,  H01L27/1296

摘要： A method of manufacturing a liquid crystal display includes disposing a gate electrode and a light blocking member on a substrate, disposing a source electrode and a drain electrode on the gate electrode to form a thin film transistor, disposing a data line on the light blocking member, disposing an organic layer on the thin film transistor and the data line, exposing a first convex part of the organic layer to light in a first area corresponding to the thin film transistor during an exposure process, and exposing a second convex part of the organic layer to the light in a second area corresponding to the data line during the exposure process using a mask. The mask includes a first transflective part aligned with the first area and a second transflective part aligned with the second area during the exposure process.

摘要翻译： 一种液晶显示器的制造方法，其特征在于，在基板上配置栅极电极和遮光部件，在栅电极上设置源电极和漏电极，形成薄膜晶体管，在光阻挡部件上配置数据线 在所述薄膜晶体管和所述数据线上设置有机层，在曝光处理期间将所述有机层的第一凸部暴露于与所述薄膜晶体管对应的第一区域内的光，并且暴露所述有机层的有机层的第二凸部 在使用掩模的曝光处理期间对应于数据线的第二区域中的光层。 掩模包括在曝光过程中与第一区域对准的第一半透反射部分和与第二区域对准的第二半透反射部件。

公开(公告)号：US20150205204A1

公开(公告)日：2015-07-23

申请号：US14573624

申请日：2014-12-17

申请人： SAMSUNG DISPLAY CO., LTD.

发明人： Jun CHUN ,  Jeong-Min PARK ,  Sung-Kyun PARK ,  Ji-Hyun KIM ,  Jin-Ho JU ,  Hyoc-Min YOUN ,  Dong-Myung KIM ,  Jin-Sun KIM ,  Tai-Hoon YEO ,  Byung-Uk KIM

IPC分类号： G03F7/038 ,  G03F7/30

CPC分类号： G03F7/0388 ,  C08F212/34 ,  C08F220/10 ,  C08F220/16 ,  C08F220/18 ,  C08F220/26 ,  G02F2001/13625 ,  G03F7/0045 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/0751 ,  G03F7/30 ,  H01L21/0274 ,  H01L21/31138 ,  H01L51/102

摘要： A photoresist composition includes an acid-labile polymer that is decomposable by reaction with an acid, a photoacid generator, an organic base having a pKa value of 9 or less and a solvent. Based on 100 parts by weight of the acid-labile polymer, the photoacid generator is about 1 to about 30 parts by weight, and the organic base is about 0.1 to about 5 parts by weight. The solvent is about 50 to about 90 wt % based on the total weight of the composition.

摘要翻译： 光致抗蚀剂组合物包括通过与酸反应可分解的酸不稳定聚合物，光酸产生剂，pKa值为9以下的有机碱和溶剂。 基于100重量份的酸不稳定聚合物，光酸产生剂为约1至约30重量份，有机碱为约0.1至约5重量份。 基于组合物的总重量，溶剂为约50至约90重量％。

公开(公告)号：US08842252B2

公开(公告)日：2014-09-23

申请号：US13580408

申请日：2012-07-12

申请人： Shijian Qin

发明人： Shijian Qin

IPC分类号： G02F1/1333 ,  G02F1/1343 ,  G02F1/136

CPC分类号： H01L27/1255 ,  G02F1/136213 ,  G02F2001/13625

摘要： An array substrate includes a storage electrode layer; an insulating layer and a transparent electrode layer are coated on a surface of the storage electrode layer in sequence. Only the insulating layer is arranged between the storage electrode layer and the transparent electrode layer of the present disclosure.

摘要翻译： 阵列基板包括存储电极层; 绝缘层和透明电极层依次涂覆在存储电极层的表面上。 在本公开的存储电极层和透明电极层之间仅设置绝缘层。

公开(公告)号：US08829528B2

公开(公告)日：2014-09-09

申请号：US13683270

申请日：2012-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Jun Koyama

IPC分类号： H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L29/10 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/66 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/1259 ,  G02F1/136227 ,  G02F2001/136231 ,  G02F2001/13625 ,  G02F2001/136295 ,  H01L21/02565 ,  H01L21/44 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1262 ,  H01L27/127 ,  H01L27/1288 ,  H01L27/3248 ,  H01L27/3276 ,  H01L27/3297 ,  H01L29/66969 ,  H01L29/7869

摘要： A step for forming an island-shaped semiconductor layer of a semiconductor device used in a display device is omitted in order to manufacture the semiconductor device with high productivity and low cost. The semiconductor device is manufactured through four photolithography processes: four steps for forming a gate electrode, for forming a source electrode and a drain electrode, for forming a contact hole, and for forming a pixel electrode. In the step for forming the contact hole, a groove portion in which a semiconductor layer is removed is formed, whereby formation of a parasitic transistor is prevented. An oxide semiconductor is used as a material of the semiconductor layer in which a channel is formed, and an oxide semiconductor having a higher insulating property than the semiconductor layer is provided over the semiconductor layer.

摘要翻译： 省略了用于形成显示装置中使用的半导体器件的岛状半导体层的步骤，以便以高生产率和低成本制造半导体器件。 通过四个光刻工艺制造半导体器件：用于形成用于形成接触孔并形成像素电极的源电极和漏电极的栅电极的四个步骤。 在形成接触孔的步骤中，形成其中去除了半导体层的沟槽部分，从而防止了寄生晶体管的形成。 使用氧化物半导体作为其中形成沟道的半导体层的材料，并且在半导体层上设置具有比半导体层更高绝缘性的氧化物半导体。