Polishing composition having a surfactant
    35.
    发明授权
    Polishing composition having a surfactant 有权
    具有表面活性剂的抛光组合物

    公开(公告)号:US06679928B2

    公开(公告)日:2004-01-20

    申请号:US10121887

    申请日:2002-04-12

    IPC分类号: C09C168

    CPC分类号: C09G1/02

    摘要: A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers, (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of a surfactant.

    摘要翻译: 用于研磨半导体衬底的抛光组合物的pH值低于5.0,并且包含(a)包含数均分子量为约20,000至1,500,000的聚合的不饱和羧酸单体的羧酸聚合物或高和低数均分子量的共混物 聚合的不饱和羧酸单体的聚合物,(b)1至15重量%的氧化剂,(c)至多3.0重量%的磨料颗粒,(d)50-5,000ppm(百万分之几)的抑制剂 ,(e)至多3.0重量%的络合剂如苹果酸,和(f)0.1-5.0重量%的表面活性剂。

    Polymeric controlled release compositions
    36.
    发明授权
    Polymeric controlled release compositions 有权
    聚合控释组合物

    公开(公告)号:US06610282B1

    公开(公告)日:2003-08-26

    申请号:US09291780

    申请日:1999-04-14

    申请人: Tirthankar Ghosh

    发明人: Tirthankar Ghosh

    IPC分类号: H01N2510

    摘要: Disclosed are compositions containing biologically active compounds that slowly release the biologically active compound. These compositions may be directly incorporated into the locus to be protected or may be applied to a structure in a coating.

    摘要翻译: 公开了含有缓慢释放生物活性化合物的生物活性化合物的组合物。 这些组合物可以直接掺入待保护的场所中或可以施加到涂层中的结构。

    Polishing of metal substrates
    37.
    发明授权

    公开(公告)号:US06605537B2

    公开(公告)日:2003-08-12

    申请号:US10043664

    申请日:2001-10-26

    IPC分类号: H01L21302

    摘要: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.

    COMPOSITION FOR POLYESTER FABRIC TREATMENT
    39.
    发明申请
    COMPOSITION FOR POLYESTER FABRIC TREATMENT 有权
    用于聚酯织物处理的组合物

    公开(公告)号:US20100234519A1

    公开(公告)日:2010-09-16

    申请号:US12713751

    申请日:2010-02-26

    IPC分类号: C08L75/04 C08L63/00

    摘要: A composition useful for treating fabrics. The composition contains a silver-containing copolymer having polymerized units of a monomer X and a monomer Y; wherein monomer X is an ethylenically unsaturated compound having a substituent group selected from an unsaturated or aromatic heterocyclic group having at least one nitrogen atom; wherein monomer Y is selected from carboxylic acids, carboxylic acid salts, carboxylic acid esters, organosulfuric acids, organosulfuric acid salts, sulfonic acids, sulfonic acid salts, phosphonic acids, phosphonic acid salts, vinyl esters, (meth)acrylamides, C8-C20 aromatic monomers containing at least one exocyclic ethylenic unsaturation and combinations thereof.

    摘要翻译: 用于处理织物的组合物。 该组合物含有具有单体X和单体Y的聚合单元的含银共聚物; 其中单体X是具有选自具有至少一个氮原子的不饱和或芳族杂环基的取代基的烯属不饱和化合物; 其中单体Y选自羧酸,羧酸盐,羧酸酯,有机硫酸,有机硫酸盐,磺酸,磺酸盐,膦酸,膦酸盐,乙烯基酯,(甲基)丙烯酰胺,C 8 -C 20芳族 含有至少一个环外烯属不饱和基团的单体及其组合。