公开(公告)号：US20190108975A1

公开(公告)日：2019-04-11

申请号：US16214567

申请日：2018-12-10

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

公开(公告)号：US20180231369A1

公开(公告)日：2018-08-16

申请号：US15952372

申请日：2018-04-13

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01B9/02 ,  H01J37/32 ,  G01K11/12

CPC classification number: G01B9/02021 ,  G01B9/02044 ,  G01B9/0209 ,  G01K11/125 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/32972

Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.

公开(公告)号：US20180061681A1

公开(公告)日：2018-03-01

申请号：US15685342

申请日：2017-08-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: H01L21/67 ,  H05H1/46 ,  H01J37/32

Abstract: There is provided a plasma processing apparatus, including: a chamber main body; a plasma trap installed inside a chamber provided by the chamber main body, and configured to divide the chamber into a first space and a second space; a mounting table installed in the second space; a plasma source configured to excite gases supplied to the first space; and a potential adjustment part including an electrode to be capacitively coupled to a plasma generated in the first space, and configured to adjust a potential of the plasma.

公开(公告)号：US20160126064A1

公开(公告)日：2016-05-05

申请号：US14934066

申请日：2015-11-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun YAMAWAKU ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: H01J37/32

CPC classification number: H01J37/3211 ,  H01J37/32183 ,  H01J37/32651 ,  H01J2237/334

Abstract: A plasma processing apparatus includes a high frequency antenna having first and second antenna elements. One end of the first antenna element is grounded and the other end thereof is connected to a high frequency power supply. One end of the second antenna element is an open end and the other end thereof is connected to either one of the one end and the other end of the first antenna element, a line length of the second antenna element having a value obtained by multiplying ((λ/4)+nλ/2) by a fractional shortening (λ is a wavelength of high frequency in vacuum and n is a natural number). A circuit viewed from the high frequency power supply toward the high frequency antenna is configured to generate, when a frequency of a high frequency power is changed, two resonant frequencies by an adjustment of the impedance adjustment unit.

Abstract translation: 等离子体处理装置包括具有第一和第二天线元件的高频天线。 第一天线元件的一端接地，另一端与高频电源连接。 第二天线元件的一端是开放端，其另一端连接到第一天线元件的一端和另一端中的任一端，第二天线元件的线长度具有通过乘以 （λ/ 4）+nλ/ 2）通过分数缩短（λ是真空中的高频波长，n是自然数）。 从高频电源向高频天线观察的电路被配置为通过调整阻抗调整单元来产生高频功率的频率改变两个谐振频率。

公开(公告)号：US20150176974A1

公开(公告)日：2015-06-25

申请号：US14576478

申请日：2014-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01B11/06 ,  H01L21/67 ,  H01L21/66

CPC classification number: G01B11/06 ,  G01B9/02021 ,  G01B9/02084 ,  G01K11/125 ,  H01J37/32477 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/67069 ,  H01L21/67253

Abstract: An apparatus for measuring a thickness or wear amount and a temperature of the ceramic member by using a terahertz wave includes a terahertz wave generating unit configured to output a terahertz wave, a terahertz wave analysis unit configured to analyze a terahertz wave and an optical system configured to guide the terahertz wave output from the terahertz wave generating unit to the ceramic member and guide reflected waves of the terahertz wave reflected from the ceramic member to the terahertz wave analysis unit. The terahertz wave analysis unit obtains an optical path difference between a first reflection wave reflected from a front surface of the ceramic member and a second reflection wave reflected from a rear surface of the ceramic member and measures a thickness of the ceramic member based on the optical path difference.

Abstract translation: 用于通过使用太赫兹波来测量陶瓷构件的厚度或磨损量和温度的装置包括：被配置为输出太赫兹波的太赫兹波产生单元，被配置为分析太赫兹波的太赫兹波分析单元和配置的光学系统 将太赫兹波发生单元的太赫兹波输出引导到陶瓷构件，并将从陶瓷构件反射的太赫波的反射波引导到太赫兹波分析单元。 太赫波分析单元获得从陶瓷构件的前表面反射的第一反射波与从陶瓷构件的后表面反射的第二反射波之间的光程差，并且基于光学元件测量陶瓷构件的厚度 路径差异

公开(公告)号：US20150168231A1

公开(公告)日：2015-06-18

申请号：US14570016

申请日：2014-12-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Chishio KOSHIMIZU ,  Tatsuo MATSUDO

IPC: G01K11/32 ,  H01J37/32

CPC classification number: G01B9/02021 ,  G01B9/02044 ,  G01B9/0209 ,  G01K11/125 ,  H01J37/32522 ,  H01J37/32935 ,  H01J37/32972

Abstract: A temperature measuring method of a component of a substrate processing chamber including a surface being worn or being deposited with a foreign material by using. The method includes: providing data representing a relationship between a temperature of the component and an optical path length of a predetermined path within the component; measuring an optical path length of the predetermined path within the component by using optical interference of reflection lights of a low-coherence light from the component when the low-coherence light is irradiated onto the component to travel through the predetermined path; and obtaining a temperature of the component by comparing the measured optical path length with the data.

Abstract translation: 1.一种基板处理室的部件的温度测定方法，其特征在于，所述基板处理室的表面通过使用被磨损或者被外来材料沉积。 该方法包括：提供表示组件的温度与组件内的预定路径的光路长度之间的关系的数据; 当所述低相干光照射到所述部件上行进通过所述预定路径时，通过使用来自所述部件的来自所述部件的低相干光的反射光的光学干涉来测量所述部件内的所述预定路径的光路长度; 以及通过将测量的光程长度与数据进行比较来获得部件的温度。

公开(公告)号：US20140286375A1

公开(公告)日：2014-09-25

申请号：US14296647

申请日：2014-06-05

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jun ABE ,  Tatsuo MATSUDO ,  Chishio KOSHIMIZU

IPC: G01J5/02

CPC classification number: G01J5/02 ,  G01K1/026 ,  G01K11/125

Abstract: A temperature measuring apparatus includes a light source, a first splitter, a second splitter, a reference beam reflector, an optical path length adjuster, a reference beam transmitting member, a first to an nth measuring beam transmitting member and a photodetector. The temperature measuring apparatus further includes an attenuator that attenuates the reference beam reflected from the reference beam reflector to thereby make an intensity thereof closer to an intensity of the measurement beam reflected from the temperature measurement object.

Abstract translation: 温度测量装置包括光源，第一分离器，第二分离器，参考光束反射器，光程长度调节器，参考光束传输部件，第一至第N测量光束传输部件和光电检测器。 温度测量装置还包括衰减器，衰减从参考光束反射器反射的参考光束，从而使其强度更接近于从温度测量对象反射的测量光束的强度。