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公开(公告)号：US07800144B2
公开(公告)日：2010-09-21
申请号：US12233080
申请日：2008-09-18
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。
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公开(公告)号：US20070272992A1
公开(公告)日：2007-11-29
申请号：US11702531
申请日：2007-02-06
IPC分类号： H01L29/84 , H01L21/768
CPC分类号： H04R19/04 , H01L25/162 , H01L27/0629 , H01L28/60 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A first semiconductor chip includes a fixed electrode formed on a first semiconductor substrate and a plurality of first metal spacers formed on a first interlayer dielectric. A second semiconductor chip includes a vibrating electrode formed on a second semiconductor substrate and a plurality of second metal spacers formed on a second interlayer dielectric. The first and second semiconductor chips are metallically bonded to each other using the first and second metal spacers. An air gap is formed in a region of the condenser microphone located between the first semiconductor chip and the second semiconductor chip except bonded regions of the first and second metal spacers.
摘要翻译： 第一半导体芯片包括形成在第一半导体衬底上的固定电极和形成在第一层间电介质上的多个第一金属间隔物。 第二半导体芯片包括形成在第二半导体衬底上的振动电极和形成在第二层间电介质上的多个第二金属间隔物。 第一和第二半导体芯片使用第一和第二金属间隔物彼此金属结合。 在位于第一半导体芯片和第二半导体芯片之间的电容式麦克风的区域中形成气隙，除了第一和第二金属间隔物的接合区域之外。
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公开(公告)号：US4951795A
公开(公告)日：1990-08-28
申请号：US275174
申请日：1988-09-02
申请人： Mitsuyoshi Mori
发明人： Mitsuyoshi Mori
CPC分类号： F16D48/0206 , F16H61/068 , F16D2048/0221 , F16D2048/0224
摘要： A modulation valve device comprising an inlet passage, an outlet passage selectively connected to one of a plurality of hydraulic clutches through a selector valve, an operation chamber to which the inlet and outlet passages connect, a plunger to be moved in accordance with a pressure in the operation chamber, an accumulator controllably connected to the outlet passage through a passage whose opening degree is controlled by the plunger, and a variable orifice mechanism associated to the inlet passage. The variable orifice mechanism includes a plurality of orifices which have different flow resistances and are adapted to form a part of the inlet passage, respectively. A control mechanism is provided for selecting the orifice forming a part of the inlet passage among a plurality of the orifices in accordance with the selected clutch.
摘要翻译： PCT No.PCT / JP88 / 00224 Sec。 371日期：1988年9月2日 102（e）日期1988年9月2日PCT提交1988年2月29日PCT公布。 公开号WO88 / 07145 日期：1988年9月22日。一种调制阀装置，包括入口通道，通过选择阀选择性地连接到多个液压离合器中的一个的出口通道，入口和出口通道连接到的操作室， 根据操作室内的压力移动，蓄能器通过一个通过柱塞的开度控制的通道可控地连接到出口通道，以及与入口通道相关联的可变孔口机构。 可变孔机构包括具有不同流动阻力并适于分别形成入口通道的一部分的多个孔。 提供了一种控制机构，用于根据所选择的离合器选择形成多个孔中的入口通道的一部分的孔口。
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公开(公告)号：US08115241B2
公开(公告)日：2012-02-14
申请号：US12233068
申请日：2008-09-18
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14636 , H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14685 , H01L27/14689 , H01L31/02164
摘要： A semiconductor device of the present invention includes a substrate; an imaging region which is formed at part of the substrate and in which photoelectric conversion cells including photoelectric conversion sections are arranged in the form of an array; a control-circuit region which is formed at part of the substrate and in which the imaging region is controlled and a signal from the imaging region is outputted; and a copper-containing interconnect layer formed above the substrate and made of a material containing copper. Furthermore, a first anti-diffusion layer and a second anti-diffusion layer are formed, as anti-diffusion layers for preventing the copper from diffusing into each photoelectric conversion section, on the photoelectric conversion section and the copper-containing interconnect layer, respectively.
摘要翻译： 本发明的半导体器件包括：衬底; 在基板的一部分形成的成像区域，其中包含光电转换部分的光电转换单元以阵列的形式排列; 形成在基板的一部分并且成像区域被控制并且来自成像区域的信号被输出的控制电路区域; 以及形成在基板上方并由含有铜的材料制成的含铜互连层。 此外，分别在光电转换部和含铜互连层上形成第一防扩散层和第二防扩散层，作为用于防止铜扩散到每个光电转换部中的防扩散层。
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35.发明授权Solid state imaging apparatus, method for driving the same and camera using the same 有权固体摄像装置及其驱动方法及使用其的相机公开(公告)号：US08084796B2
公开(公告)日：2011-12-27
申请号：US12202804
申请日：2008-09-02
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3741 , H04N5/37457
摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion cell via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个传输晶体管中的每一个连接到每个所述光电转换单元的同一行中的每个光电部分中的每一个，并由所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。
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公开(公告)号：US08035178B2
公开(公告)日：2011-10-11
申请号：US12377312
申请日：2008-06-24
IPC分类号： H01L27/142
CPC分类号： H01L27/14603 , H01L27/1463 , H01L31/036
摘要： A plurality of pixel portions (12) are formed on a silicon substrate (11). A photoelectric converter portion (10) constituting each of the pixel portions (12) is electrically isolated by an element isolation portion (13) comprising an insulating film formed on the silicon substrate (11). The photoelectric converter portion (10) partitioned by the element isolation portion (13) is so formed that a crystal orientation of the sides in contact with the element isolation portion (13) corresponds to a direction. This makes it possible to reduce dark current caused by stress in the vicinity of the interface of the element isolation portion (13) and maintain high sensitivity even if the pixel portions (12) are made smaller in size.
摘要翻译： 在硅衬底（11）上形成多个像素部分（12）。 构成每个像素部分（12）的光电转换器部分（10）由形成在硅衬底（11）上的绝缘膜的元件隔离部分（13）电隔离。 由元件隔离部分（13）分隔的光电转换器部分（10）形成为使得与元件隔离部分（13）接触的侧面的晶体取向对应于<00-1>方向。 这使得可以减小由元件隔离部分13的界面附近的应力引起的暗电流，并且即使使像素部分（12）的尺寸更小，也能保持高灵敏度。
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37.发明授权Solid state imaging device and camera comprising a device isolation having a step 有权固态成像装置和相机包括具有台阶的装置隔离公开(公告)号：US07816752B2
公开(公告)日：2010-10-19
申请号：US11436649
申请日：2006-05-19
申请人： Mitsuyoshi Mori
发明人： Mitsuyoshi Mori
IPC分类号： H01L33/133
CPC分类号： H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： In a solid state imaging device which includes a photodiode in the upper part of a silicon substrate and a MOSFET active region separated from the photodiode by a device isolation region, the width of the device isolation region is smaller in its lower part than in its upper part.
摘要翻译： 在包括硅衬底的上部中的光电二极管和通过器件隔离区与光电二极管分离的MOSFET有源区的固态成像器件中，器件隔离区的宽度在其下部小于其上部 部分。
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38.发明授权Solid state imaging apparatus, method for driving the same and camera using the same 有权固体摄像装置及其驱动方法及使用其的相机公开(公告)号：US07436010B2
公开(公告)日：2008-10-14
申请号：US10706918
申请日：2003-11-14
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14641 , H04N5/3741 , H04N5/37457
摘要： A solid state imaging apparatus includes: a plurality of photoelectric conversion cells each including a plurality of photoelectric sections arranged in an array of at least two rows and two columns; a plurality of floating diffusion sections each being connected to each of ones of the photoelectric sections which are included in the same row of each said photoelectric conversion via each of a plurality of transfer transistors, and being shared by said ones of the photoelectric sections; a plurality of read-out lines each being selectively connected to at least two of the transfer transistors; and a plurality of pixel amplifier transistors each detecting and outputting the potential of each said the floating diffusion section. Charges of the photoelectric conversion sections each being connected to one of the read-out lines and being read out by the transfer transistors are read out by different floating diffusion sections.
摘要翻译： 固态成像装置包括：多个光电转换单元，每个光电转换单元包括排列成至少两行和两列的阵列的多个光电部分; 多个浮动扩散部分，各自通过多个转移晶体管中的每一个连接到每个光电部分中的每一个，每个光电部分包括在每个所述光电转换的同一行中，并被所述光电部分共享; 多个读出线各自选择性地连接到所述传输晶体管中的至少两个; 以及多个像素放大器晶体管，每个检测并输出每个所述浮动扩散部分的电位。 通过不同的浮动扩散部分读出各自连接到一条读出线并被转移晶体管读出的光电转换部分的电荷。
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39.发明申请Solid State Imaging Apparatus Method for Fabricating the Same and Camera Using the Same 有权固态成像装置及其制造方法及其使用方法公开(公告)号：US20080105906A1
公开(公告)日：2008-05-08
申请号：US10571426
申请日：2005-06-28
申请人： Mitsuyoshi Mori , Daisuke Ueda
发明人： Mitsuyoshi Mori , Daisuke Ueda
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00 , H01L21/8238
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A solid state imaging apparatus includes a plurality of photoelectric conversion sections formed in an imaging area of a silicon substrate, and an embedded layer embedded in an isolation trench formed in at least one part of the silicon substrate located around the photoelectric conversion sections. The embedded layer is made of an isolation material having a thermal expansion coefficient larger than silicon oxide and equal to or smaller than silicon.
摘要翻译： 固态成像装置包括形成在硅衬底的成像区域中的多个光电转换部分和嵌入在位于光电转换部分周围的硅衬底的至少一部分中的隔离沟槽中的嵌入层。 嵌入层由具有大于硅的热膨胀系数和等于或小于硅的热膨胀系数的隔离材料制成。
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40.发明授权公开(公告)号：US07355641B2
公开(公告)日：2008-04-08
申请号：US10754799
申请日：2004-01-08
CPC分类号： H04N9/045
摘要： A solid-state imaging device includes: an imaging portion in which a plurality of pixels for photoelectrically converting incident light are arranged so as to form a plural kinds of pixel lines having different color arrangements; a memory in which pixel signals obtained from the pixels of at least one line in the imaging portion are stored; an output signal line into which the pixel signals stored in the memory are read out; and an output portion from which signals of the output signal line are output. Pixel signals obtained from non-adjacent pixels of a first color in one line are read out into the output signal lines sequentially, and then pixel signals obtained from non-adjacent pixels of a second color are read out into the output signal lines sequentially. Pixel signals of the same color are output sequentially, so that it is not necessary to operate color selection switch for every pixel signals at high speed. Furthermore, it is possible to suppress the mixing of adjacent colors.
摘要翻译： 一种固态成像装置，包括：成像部，其中配置用于光电转换入射光的多个像素，以形成具有不同颜色配置的多种像素线; 存储从摄像部中的至少一行的像素得到的像素信号的存储器; 读出存储在存储器中的像素信号的输出信号线; 以及输出部分，输出信号线的信号。 从一行中的第一颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中，然后从第二颜色的非相邻像素获得的像素信号被顺序地读出到输出信号线中。 相同颜色的像素信号顺序输出，因此不需要以高速度对每个像素信号进行颜色选择开关。 此外，可以抑制相邻颜色的混合。
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