利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

278 条记录 (耗时 0.038 秒)

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    31.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20090263957A1

    公开(公告)日：2009-10-22

    申请号：US12401453

    申请日：2009-03-10

    申请人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

    发明人： Ichiro MIZUSHIMA ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

    IPC分类号： H01L21/20

    CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

    摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

    摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

    Semiconductor device and manufacturing method thereof
    32.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US07537978B2

    公开(公告)日：2009-05-26

    申请号：US11717068

    申请日：2007-03-13

    申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

    发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

    IPC分类号： H01L21/00

    CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

    摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

    摘要翻译： 半导体器件包括由半导体制成的支撑层，通过在支撑层的表面层中注入杂质形成的扩散层，设置在扩散层上的掩埋绝缘层，设置在掩埋绝缘层上的岛状有源层， 形成在有源层中的沟道区域，形成在有源层中的源极和漏极区域，夹持沟道区域，形成在沟道区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和岛的侧表面 类型的有源层，并且与沟道，源极和漏极区域绝缘和隔离，以及连接到有源层的电极。

    Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate
    33.
    发明授权
    Semiconductor device substrate including a single-crystalline layer and method of manufacturing semiconductor device substrate 失效
    包括单晶层的半导体器件衬底和半导体器件衬底的制造方法

    公开(公告)号：US07521300B2

    公开(公告)日：2009-04-21

    申请号：US11455735

    申请日：2006-06-20

    申请人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

    发明人： Hajime Nagano ,  Takashi Yamada ,  Tsutomu Sato ,  Ichiro Mizushima ,  Hisato Oyamatsu

    IPC分类号： H01L21/762

    CPC分类号： H01L27/1203 ,  H01L21/84

    摘要： A method of manufacturing a semiconductor device substrate includes forming a mask layer pattern on a semiconductor layer insulated from a surface of a semiconductor substrate by an electrically insulating layer, etching the semiconductor layer according to the pattern of the mask layer to form a trench leading to the insulating layer, etching a protective layer on the semiconductor substrate having a thickness less than the thickness of the insulating layer to form a sidewall protective film which covers a side surface of the trench, etching the insulating layer from a bottom surface of the trench to the semiconductor substrate; and growing a single-crystalline layer from the surface of the semiconductor substrate exposed as a result of etching the insulating layer.

    摘要翻译： 一种制造半导体器件基板的方法包括：通过电绝缘层在与半导体衬底的表面绝缘的半导体层上形成掩模层图案，根据掩模层的图案蚀刻半导体层，形成通向 绝缘层，蚀刻具有小于绝缘层厚度的厚度的半导体衬底上的保护层，以形成覆盖沟槽侧表面的侧壁保护膜，从沟槽的底表面蚀刻绝缘层至 半导体衬底; 以及从蚀刻绝缘层而暴露的半导体衬底的表面生长单晶层。

    Element formation substrate, method of manufacturing the same, and semiconductor device
    34.
    发明授权
    Element formation substrate, method of manufacturing the same, and semiconductor device 失效
    元件形成基板及其制造方法以及半导体装置

    公开(公告)号：US07510945B2

    公开(公告)日：2009-03-31

    申请号：US11907354

    申请日：2007-10-11

    申请人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

    发明人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

    IPC分类号： H01L21/76 ,  H01L21/46

    CPC分类号： H01L21/84 ,  H01L21/76251 ,  H01L27/10829 ,  H01L27/10894 ,  H01L27/1203 ,  Y10S438/977

    摘要： A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.

    摘要翻译： 在主表面上具有热氧化膜的支撑侧基板在主表面上具有热氧化膜的有源层侧基板上接合，同时使主表面彼此相对。 有源层侧基板和氧化膜的一部分从与有源层侧基板的主表面相反的表面选择性地蚀刻到由热氧化膜形成的掩埋氧化膜的中间深度 一部分。 在有源层侧基板的蚀刻侧面部形成有侧壁绝缘膜。 然后，选择性地蚀刻除有源层侧基板之下的剩余的掩埋氧化膜。 通过去除掩埋氧化膜而暴露的支撑侧基板上形成单晶半导体层。

    Element formation substrate for forming semiconductor device
    37.
    发明授权
    Element formation substrate for forming semiconductor device 失效
    用于形成半导体器件的元件形成衬底

    公开(公告)号：US07285825B2

    公开(公告)日：2007-10-23

    申请号：US10407677

    申请日：2003-04-07

    申请人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

    发明人： Hajime Nagano ,  Shinichi Nitta ,  Takashi Yamada ,  Tsutomu Sato ,  Katsujiro Tanzawa ,  Ichiro Mizushima

    IPC分类号： H01L27/01 ,  H01L27/12 ,  H01L31/0392

    CPC分类号： H01L21/84 ,  H01L21/76251 ,  H01L27/10829 ,  H01L27/10894 ,  H01L27/1203 ,  Y10S438/977

    摘要： A support-side substrate having a thermal oxide film on the major surface is bonded to an active-layer-side substrate having a thermal oxide film on the major surface while making the major surfaces oppose each other. The active-layer-side substrate and part of the oxide film are selectively etched from a surface opposite to the major surface of the active-layer-side substrate to a halfway depth of the buried oxide film formed from the thermal oxide films at the bonding portion. A sidewall insulating film is formed on the etching side surface portion of the active-layer-side substrate. Then, the remaining buried oxide film except that immediately under the active-layer-side substrate is selectively etched. A single-crystal semiconductor layer is formed on the support-side substrate exposed by removing the buried oxide film.

    摘要翻译： 在主表面上具有热氧化膜的支撑侧基板在主表面上具有热氧化膜的有源层侧基板上接合，同时使主表面彼此相对。 有源层侧基板和氧化膜的一部分从与有源层侧基板的主表面相反的表面选择性地蚀刻到由热氧化膜形成的掩埋氧化膜的中间深度 一部分。 在有源层侧基板的蚀刻侧面部形成有侧壁绝缘膜。 然后，选择性地蚀刻除有源层侧基板之下的剩余的掩埋氧化膜。 通过去除掩埋氧化膜而暴露的支撑侧基板上形成单晶半导体层。