公开(公告)号：US07208353B2

公开(公告)日：2007-04-24

申请号：US11137539

申请日：2005-05-26

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/00 ,  H01L21/84

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

摘要翻译： 半导体器件包括由半导体制成的支撑层，通过在支撑层的表面层中注入杂质形成的扩散层，设置在扩散层上的掩埋绝缘层，设置在掩埋绝缘层上的岛状有源层， 形成在有源层中的沟道区域，形成在有源层中的源极和漏极区域，夹持沟道区域，形成在沟道区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和岛的侧表面 类型的有源层，并且与沟道，源极和漏极区域绝缘和隔离，以及连接到有源层的电极。

公开(公告)号：US20050253196A1

公开(公告)日：2005-11-17

申请号：US11137539

申请日：2005-05-26

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L27/01

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

摘要翻译： 半导体器件包括由半导体制成的支撑层，通过在支撑层的表面层中注入杂质形成的扩散层，设置在扩散层上的掩埋绝缘层，设置在掩埋绝缘层上的岛状有源层， 形成在有源层中的沟道区域，形成在有源层中的源极和漏极区域，夹持沟道区域，形成在沟道区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和岛的侧表面 类型的有源层，并且与沟道，源极和漏极区域绝缘和隔离，以及连接到有源层的电极。

公开(公告)号：US07537978B2

公开(公告)日：2009-05-26

申请号：US11717068

申请日：2007-03-13

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/00

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

摘要翻译： 半导体器件包括由半导体制成的支撑层，通过在支撑层的表面层中注入杂质形成的扩散层，设置在扩散层上的掩埋绝缘层，设置在掩埋绝缘层上的岛状有源层， 形成在有源层中的沟道区域，形成在有源层中的源极和漏极区域，夹持沟道区域，形成在沟道区域上的栅极绝缘膜，形成在栅极绝缘膜上的栅电极和岛的侧表面 类型的有源层，并且与沟道，源极和漏极区域绝缘和隔离，以及连接到有源层的电极。

公开(公告)号：US20070176237A1

公开(公告)日：2007-08-02

申请号：US11717068

申请日：2007-03-13

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L27/12

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

公开(公告)号：US06979846B2

公开(公告)日：2005-12-27

申请号：US10436181

申请日：2003-05-13

申请人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Atsushi Yagishita ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/08 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L29/76

CPC分类号： H01L29/66772 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/66545 ,  H01L29/78639 ,  H01L29/78648

摘要： A semiconductor device comprises a support layer made of semiconductor, a diffusion layer formed by implanting impurities in a surface layer of the support layer, a buried insulating layer provided on the diffusion layer, an island-like active layer provided on the buried insulating layer, a channel region formed in the active layer, source and drain regions formed in the active layer, sandwiching the channel region, a gate insulating film formed on the channel region, a gate electrode formed on the gate insulating film and on side surfaces of the island-like active layer, and insulated and isolated from the channel, source, and drain regions, and an electrode connected to the active layer.

公开(公告)号：US20080233698A1

公开(公告)日：2008-09-25

申请号：US12073763

申请日：2008-03-10

申请人： Tsutomu Sato ,  Ichiro Mizushima

发明人： Tsutomu Sato ,  Ichiro Mizushima

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/3247 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/66772 ,  H01L29/78639 ,  H01L29/78648 ,  H01L29/78654

摘要： A semiconductor device comprises a semiconductor substrate, a MOSFET including a double gate structure provided on the semiconductor substrate, and an isolation region for isolating the MOSFET from other elements comprising a trench provided on the surface of the semiconductor substrate and an insulator provided in the trench, a part of the isolation region in the trench around the MOSFET having a bottom deeper than other part of the isolation region.

摘要翻译： 半导体器件包括半导体衬底，包括设置在半导体衬底上的双栅极结构的MOSFET和用于将MOSFET与其他元件隔离的隔离区，该隔离区包括设置在半导体衬底的表面上的沟槽和设置在沟槽中的绝缘体 在MOSFET周围的沟槽中的隔离区域的一部分具有比隔离区域的其它部分更深的底部。

公开(公告)号：US20060157789A1

公开(公告)日：2006-07-20

申请号：US11315796

申请日：2005-12-22

申请人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

发明人： Kazumi Inoh ,  Hidemi Ishiuchi ,  Satoshi Matsuda ,  Ichiro Mizushima ,  Tsutomu Sato

IPC分类号： H01L27/12

CPC分类号： H01L27/10894 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/764 ,  H01L21/84 ,  H01L27/0218 ,  H01L27/105 ,  H01L27/10829 ,  H01L27/1087 ,  H01L27/10885 ,  H01L27/10897 ,  H01L27/11 ,  H01L27/115 ,  H01L27/11502 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/66181 ,  H01L29/7841

摘要： A semiconductor device includes a semiconductor substrate, cavities, and an element isolating region. The cavities, which are each shaped like a flat plate, are made in the semiconductor substrate. The element isolating region is formed in the surface of the semiconductor substrate and located at the sides of the cavities.

公开(公告)号：US20050156245A1

公开(公告)日：2005-07-21

申请号：US11073617

申请日：2005-03-08

申请人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

发明人： Tsutomu Sato ,  Hajime Nagano ,  Ichiro Mizushima ,  Takashi Yamada ,  Yuso Udo ,  Shinichi Nitta

IPC分类号： H01L21/762 ,  H01L27/12 ,  H01L27/10

CPC分类号： H01L21/764 ,  H01L21/76264 ,  H01L21/76283 ,  H01L21/76289 ,  H01L21/823412 ,  H01L21/823481 ,  H01L21/84 ,  H01L27/10897 ,  H01L27/1203 ,  H01L27/1207

摘要： A semiconductor device according to an aspect of the present invention comprises a first semiconductor layer and a plurality of second semiconductor layers. The first semiconductor layer is formed in a first region of a semiconductor substrate with one of an insulating film and a cavity interposed between the semiconductor substrate and the first semiconductor layer. The plurality of second semiconductor layers is formed in second regions of the semiconductor substrate.

摘要翻译： 根据本发明的一个方面的半导体器件包括第一半导体层和多个第二半导体层。 第一半导体层形成在半导体衬底的第一区域中，绝缘膜和介于半导体衬底和第一半导体层之间的腔中的一个。 多个第二半导体层形成在半导体衬底的第二区域中。

公开(公告)号：US08551871B2

公开(公告)日：2013-10-08

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。

公开(公告)号：US20120090535A1

公开(公告)日：2012-04-19

申请号：US13240662

申请日：2011-09-22

申请人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

发明人： Ichiro Mizushima ,  Shinji Mori ,  Masahiko Murano ,  Tsutomu Sato ,  Takashi Nakao ,  Hiroshi Itokawa

IPC分类号： C30B25/02

CPC分类号： H01L21/02636 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a semiconductor device according to one embodiment includes: exposing a surface of a semiconductor substrate to a halogen-containing gas that contains at least one of Si and Ge, the semiconductor substrate being provided with a member comprising an oxide and consisting mainly of Si; and exposing the surface of the semiconductor substrate to an atmosphere containing at least one of a Si-containing gas not containing halogen and a Ge-containing gas not containing halogen after starting exposure of the surface of the semiconductor substrate to the halogen-containing gas, thereby epitaxially growing a crystal film containing at least one of Si and Ge on the surface.

摘要翻译： 根据一个实施例的制造半导体器件的方法包括：将半导体衬底的表面暴露于含有Si和Ge中的至少一种的含卤素的气体，所述半导体衬底设置有包含氧化物的构件，主要由 的Si; 以及将半导体衬底的表面开始暴露于含卤素气体之后，将半导体衬底的表面暴露于含有不含卤素的含Si气体和不含卤素的含Ge气体中的至少一种的气氛中， 从而在表面上外延生长含有Si和Ge中的至少一种的晶体膜。