公开(公告)号：US20200235063A1

公开(公告)日：2020-07-23

申请号：US16280938

申请日：2019-02-20

Applicant: United Microelectronics Corp.

Inventor： Chun-Hung Chen ,  Ming-Tse Lin

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/00

Abstract: Provided are a three-dimensional integrated circuit (3DIC) and a method of manufacturing the same. The 3DIC includes a first wafer, a second wafer, and a hybrid bonding structure. The second wafer is bonded to the first wafer by the hybrid bonding structure. The hybrid bonding structure includes a blocking layer between a hybrid bonding dielectric layer and a hybrid bonding metal layer.

公开(公告)号：US20160155685A1

公开(公告)日：2016-06-02

申请号：US14556215

申请日：2014-11-30

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Hung Chen ,  Chien-Li Kuo ,  Ming-Tse Lin

IPC: H01L23/48 ,  H01L21/768 ,  H01L21/3065 ,  H01L23/532

CPC classification number: H01L23/481 ,  H01L21/76898 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating through-substrate structure is disclosed. The method includes the steps of: providing a substrate; forming a through-substrate hole and a through-substrate trench in the substrate; and forming a metal layer in the through-substrate hole and the through-substrate trench for forming a through-substrate via and a through-substrate conductor having a void therein.

Abstract translation: 公开了一种用于制造贯穿衬底结构的方法。 该方法包括以下步骤：提供衬底; 在基板中形成贯通基板孔和贯通基板沟槽; 以及在贯通基板孔中形成金属层，以及在其中形成贯通基板通孔的贯通基板沟槽和形成有空隙的贯通基板导体。

公开(公告)号：US20150041952A1

公开(公告)日：2015-02-12

申请号：US13964184

申请日：2013-08-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chun-Hung Chen ,  Ming-Tse Lin ,  Chien-Li Kuo ,  Kuei-Sheng Wu

IPC: H01L23/60 ,  H01L49/02

CPC classification number: H01L23/60 ,  H01L23/147 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/5225 ,  H01L23/5227 ,  H01L23/645 ,  H01L28/10 ,  H01L2224/16225 ,  H01L2924/1431 ,  H01L2924/1437 ,  H01L2924/15311 ,  H01L2924/19042 ,  H01L2924/19105

Abstract: A semiconductor structure is provided. The semiconductor structure includes an interposer structure. The interposer structure includes an interposer substrate, a ground, through vias, a dielectric layer, and an inductor. The through vias are formed in the interposer substrate and electrically connected to the ground. The dielectric layer is on the interposer substrate. The inductor is on the dielectric layer.

Abstract translation: 提供半导体结构。 半导体结构包括内插器结构。 插入器结构包括插入器衬底，接地，通孔，电介质层和电感器。 通孔形成在插入器基板中并电连接到地。 介电层位于内插器基板上。 电感在介质层上。