公开(公告)号：US20180190661A1

公开(公告)日：2018-07-05

申请号：US15854816

申请日：2017-12-27

Applicant: UNITED MICROELECTRONICS CORP. ,  Fujian Jinhua Integrated Circuit Co., Ltd.

Inventor： Yung-Ming Wang ,  Li-Wei Liu ,  Shu-Yen Chan ,  Yukihiro Nagai ,  Tien-Chen Chan ,  Ger-Pin Lin

IPC: H01L27/108 ,  H01L21/28 ,  H01L29/423 ,  H01L29/49

CPC classification number: H01L27/10876 ,  H01L21/28088 ,  H01L21/28114 ,  H01L21/28211 ,  H01L21/2822 ,  H01L27/10823 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4966

Abstract: A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; performing an ion implantation process to implant ions into the substrate underneath the trench; performing an in-situ steam generation (ISSG) process to form a gate dielectric layer in the trench; forming a gate electrode on the gate dielectric layer; and forming a doped region in the substrate adjacent to two sides of the gate electrode.

公开(公告)号：US20170373191A1

公开(公告)日：2017-12-28

申请号：US15214429

申请日：2016-07-19

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Tien-Chen Chan ,  Yi-Fan Li ,  Li-Wei Feng ,  Ming-Hua Chang ,  Yu-Shu Lin ,  Shu-Yen Chan

IPC: H01L29/78 ,  H01L21/02 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L21/02164 ,  H01L21/0217 ,  H01L29/0649 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for fabricating semiconductor device is disclosed. First, a fin-shaped structure is formed on a substrate, a first liner is formed on the substrate and the fin-shaped structure, a second liner is formed on the first liner, part of the second liner and part of the first liner are removed to expose a top surface of the fin-shaped structure, part of the first liner between the fin-shaped structure and the second liner is removed to form a recess, and an epitaxial layer is formed in the recess.

公开(公告)号：US09754938B1

公开(公告)日：2017-09-05

申请号：US15187800

申请日：2016-06-21

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Li-Wei Feng ,  Tong-Jyun Huang ,  Shih-Hung Tsai ,  Jia-Rong Wu ,  Tien-Chen Chan ,  Yu-Shu Lin ,  Jyh-Shyang Jenq

IPC: H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/311 ,  H01L29/66

CPC classification number: H01L27/0886 ,  H01L21/31144 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823437 ,  H01L29/0649 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate, fin-shaped structures, a protection layer, epitaxial layers, and a gate electrode. The fin-shaped structures are disposed in a first region and a second region of the substrate. The protection layer conformally covers the surface of the substrate and the sidewalls of fin-shaped structures. The epitaxial layers respectively conformally and directly cover the fin-shaped structures in the first region. The gate electrode covers the fin-shaped structures in the second region, and the protection layer is disposed between the gate electrode and the fin-shaped structures.