公开(公告)号：US07369414B2

公开(公告)日：2008-05-06

申请号：US10292690

申请日：2002-11-12

申请人： Woo-Jin Kim

发明人： Woo-Jin Kim

IPC分类号： H05K5/00 ,  H05K5/04 ,  H05K5/06

CPC分类号： H05K1/028

摘要： An electric device having a first body unit and a second body unit connected through a hinge unit is provided. A Flexible Printed Circuit (FPC) having coil portions wrappable around the shafts of the hinge unit is also provided so that when the second body unit pivots or rotates in relation to the first body unit, the FPC's length is automatically adjusted by way of the coil portions coiling and uncoiling about the shafts.

摘要翻译： 提供具有通过铰链单元连接的第一主体单元和第二主体单元的电气装置。 还设置具有能够围绕铰链单元的轴可卷绕的线圈部分的柔性印刷电路（FPC），使得当第二主体单元相对于第一主体单元枢转或旋转时，FPC的长度通过线圈自动调节 部分绕轴旋转和开卷。

公开(公告)号：US07084655B2

公开(公告)日：2006-08-01

申请号：US11025092

申请日：2004-12-28

申请人： Byung-Jun Min ,  Woo-Jin Kim ,  Jeong-Ho Bang ,  Hyun-Seop Shim ,  Hyun-Geun Iy ,  Jae-Il Lee

发明人： Byung-Jun Min ,  Woo-Jin Kim ,  Jeong-Ho Bang ,  Hyun-Seop Shim ,  Hyun-Geun Iy ,  Jae-Il Lee

IPC分类号： G01R31/02

CPC分类号： G01R31/2877 ,  G01R1/0483 ,  G01R31/286 ,  G01R31/2862 ,  G01R31/2879

摘要： A forced air heat exhaust type of burn-in test apparatus for packages: A first air supply duct provides air to the burn-in chamber and a second air supply duct provides air to supply tubes that direst air into the test sockets that hold the packages. The test sockets have a structure that allows air ventilation of the conductive balls. Accordingly, the apparatus can control the temperature around the packages as well as the temperature in the burn-in chamber, thus preventing conductive ball-melting.

摘要翻译： 用于包装的强制空气热排放型老化测试装置：第一供气管道向老化室提供空气，第二空气供应管道提供空气以将管道直接供应到容纳包装的测试插座中 。 测试插座具有允许导电球通风的结构。 因此，该装置可以控制包装周围的温度以及老化室中的温度，从而防止导电性的球熔融。

公开(公告)号：US20060160286A1

公开(公告)日：2006-07-20

申请号：US11385217

申请日：2006-03-20

申请人： Eung-Rim Hwang ,  Se-Aug Jang ,  Tae-Woo Jung ,  Seo-Min Kim ,  Woo-Jin Kim ,  Hyung-Soon Park ,  Young-Bog Kim ,  Hong-Seon Yang ,  Hyun-Chul Sohn

发明人： Eung-Rim Hwang ,  Se-Aug Jang ,  Tae-Woo Jung ,  Seo-Min Kim ,  Woo-Jin Kim ,  Hyung-Soon Park ,  Young-Bog Kim ,  Hong-Seon Yang ,  Hyun-Chul Sohn

IPC分类号： H01L21/338 ,  H01L21/336

CPC分类号： H01L27/11521 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/115 ,  H01L29/7886

摘要： Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.

公开(公告)号：US20060022249A1

公开(公告)日：2006-02-02

申请号：US11053704

申请日：2005-02-07

申请人： Se-Aug Jang ,  Tae-Woo Jung ,  Seo-Min Kim ,  Woo-Jin Kim ,  Hyung-Soon Park ,  Young-Bog Kim ,  Hong-Seon Yang ,  Hyun-Chul Sohn ,  Eung-Rim Hwang

发明人： Se-Aug Jang ,  Tae-Woo Jung ,  Seo-Min Kim ,  Woo-Jin Kim ,  Hyung-Soon Park ,  Young-Bog Kim ,  Hong-Seon Yang ,  Hyun-Chul Sohn ,  Eung-Rim Hwang

IPC分类号： H01L21/8242 ,  H01L29/94

CPC分类号： H01L27/11521 ,  H01L27/10855 ,  H01L27/10888 ,  H01L27/115 ,  H01L29/7886

摘要： Disclosed are a memory device and a method for fabricating the same. The memory device includes: a substrate provided with a trench; a bit line contact junction formed beneath the trench; a plurality of storage node contact junctions formed outside the trench; and a plurality of gate structures each being formed on the substrate disposed between the bit line contact junction and one of the storage node contact junctions. Each sidewall of the trench becomes a part of the individual channels and thus, channel lengths of the transistors in the cell region become elongated. Accordingly, the storage node contact junctions have a decreased level of leakage currents, thereby increasing data retention time.

公开(公告)号：US06972740B2

公开(公告)日：2005-12-06

申请号：US10425541

申请日：2003-04-28

申请人： Soo-Jin Lee ,  Woo-Jin Kim ,  Im-Su Choi

发明人： Soo-Jin Lee ,  Woo-Jin Kim ,  Im-Su Choi

IPC分类号： G09G3/20 ,  G09G3/28

CPC分类号： G09G3/2007 ,  G09G3/296 ,  G09G2320/0257 ,  G09G2320/0626 ,  G09G2360/16

摘要： An after-image prevention apparatus and method for a plasma display panel having a plurality of address electrodes and a plurality of scan and sustain electrodes arranged in pairs and in a zigzag pattern. An average signal level until the current frame from currently input picture data and an average signal level of each cell until the previous frame as stored in a memory section is calculated. The average signal level is compared with the picture data. An attenuation coefficient is generated corresponding to the difference between the average signal level and the picture data. The picture data is multiplied by the attenuation coefficient to output correction data, thereby preventing an after-image phenomenon on the plasma display panel.

摘要翻译： 一种用于等离子体显示面板的后置图像防止装置和方法，其具有多个地址电极和成对地布置成Z字形图案的多个扫描和维持电极。 计算从当前输入图像数据起的当前帧直到存储在存储器部分中的前一帧之前的每个单元的平均信号电平的平均信号电平。 将平均信号电平与图像数据进行比较。 根据平均信号电平和图像数据之间的差异产生衰减系数。 图像数据乘以衰减系数以输出校正数据，从而防止等离子体显示面板上的后图像现象。

公开(公告)号：US20050140593A1

公开(公告)日：2005-06-30

申请号：US10992210

申请日：2004-11-19

申请人： Geun-Yeong Chang ,  Woo-Jin Kim

发明人： Geun-Yeong Chang ,  Woo-Jin Kim

IPC分类号： H04N5/66 ,  G09F9/313 ,  G09G3/20 ,  G09G3/28 ,  G09G3/288 ,  G09G3/291 ,  G09G3/294 ,  G09G3/298 ,  G09G5/02 ,  H01J17/49

CPC分类号： G09G3/288 ,  G09G2320/0626 ,  G09G2330/02 ,  G09G2330/045 ,  G09G2360/16

摘要： A method and apparatus for driving a plasma display panel that automatically controls power using an average signal level that is compensated based on a difference between power consumption at red (R), green (G), and blue (B) discharge cells. The method includes calculating R, G, and B average signal levels, calculating a compensated average signal level using the R, G, and B average signal levels and R, G, and B weights, and controlling the number of discharges for each frame, which is in inversely proportional to the compensated average signal level. The R, G, and B weights are set at a value that reduces a difference between power consumption at the R, G, and B colored discharge cells when displaying the R, G, and B colors in a case where the R, G, and B average signal levels are equal to each other.

摘要翻译： 一种用于驱动等离子体显示面板的方法和装置，其使用基于红色（R），绿色（G）和蓝色（B）放电单元的功率消耗之间的差异来补偿的平均信号电平来自动控制功率。 该方法包括计算R，G和B平均信号电平，使用R，G和B平均信号电平和R，G和B权重来计算补偿的平均信号电平，并且控制每帧的放电次数， 其与补偿的平均信号电平成反比。 将R，G和B权重设定为在R，G和B着色放电单元上显示R，G和B颜色时的功耗之差减小的值， B平均信号电平相等。

公开(公告)号：US06800907B2

公开(公告)日：2004-10-05

申请号：US10330341

申请日：2002-12-30

申请人： Jae-Ok Kim ,  Woo-Jin Kim ,  Jong-Hyuk Oh

发明人： Jae-Ok Kim ,  Woo-Jin Kim ,  Jong-Hyuk Oh

IPC分类号： H01L2362

CPC分类号： H01L29/6659 ,  H01L21/28061 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides a method for fabricating a semiconductor device capable of suppressing stresses concentrated at bottom corners of a gate electrode as simultaneously as preventing an oxidation of a metal included in a gate electrode. The inventive method includes the steps of: forming a gate oxide layer on a substrate; forming a gate electrode including at least one metal layer on the gate oxide layer; forming an oxide layer on the substrate including the gate electrode at a temperature lower than oxidation temperature of the metal layer; and etching selectively the densified oxide layer so as to form an oxide spacer on the lateral sides of the gate electrode.

摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件能够同时抑制栅电极中包含的金属的氧化同时抑制集中在栅电极的底角的应力。 本发明的方法包括以下步骤：在衬底上形成栅氧化层; 在所述栅极氧化物层上形成包括至少一个金属层的栅电极; 在比所述金属层的氧化温度低的温度下在包括所述栅电极的所述基板上形成氧化物层; 并选择性地蚀刻致密的氧化物层，以在栅电极的侧面上形成氧化物间隔物。