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    Method for fabricating semiconductor device
    1.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US06800907B2

    公开(公告)日：2004-10-05

    申请号：US10330341

    申请日：2002-12-30

    申请人： Jae-Ok Kim ,  Woo-Jin Kim ,  Jong-Hyuk Oh

    发明人： Jae-Ok Kim ,  Woo-Jin Kim ,  Jong-Hyuk Oh

    IPC分类号： H01L2362

    CPC分类号： H01L29/6659 ,  H01L21/28061 ,  H01L29/4933 ,  H01L29/6656 ,  H01L29/7833 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a method for fabricating a semiconductor device capable of suppressing stresses concentrated at bottom corners of a gate electrode as simultaneously as preventing an oxidation of a metal included in a gate electrode. The inventive method includes the steps of: forming a gate oxide layer on a substrate; forming a gate electrode including at least one metal layer on the gate oxide layer; forming an oxide layer on the substrate including the gate electrode at a temperature lower than oxidation temperature of the metal layer; and etching selectively the densified oxide layer so as to form an oxide spacer on the lateral sides of the gate electrode.

    摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件能够同时抑制栅电极中包含的金属的氧化同时抑制集中在栅电极的底角的应力。 本发明的方法包括以下步骤：在衬底上形成栅氧化层; 在所述栅极氧化物层上形成包括至少一个金属层的栅电极; 在比所述金属层的氧化温度低的温度下在包括所述栅电极的所述基板上形成氧化物层; 并选择性地蚀刻致密的氧化物层，以在栅电极的侧面上形成氧化物间隔物。

    Non-Volatile Memory Devices and Methods of Fabricating the Same
    2.
    发明申请
    Non-Volatile Memory Devices and Methods of Fabricating the Same 有权
    非易失性存储器件及其制造方法

    公开(公告)号：US20140264680A1

    公开(公告)日：2014-09-18

    申请号：US14195891

    申请日：2014-03-04

    申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

    发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

    IPC分类号： H01L27/22 ,  H01L43/02

    CPC分类号： H01L27/222 ,  H01L27/228 ,  H01L43/08

    摘要： A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.

    摘要翻译： 提供非易失性存储器件。 非易失性存储器件包括形成在衬底中的多个杂质区，与至少​​一个杂质区电连接的第一触点，与至少一个杂质区电连接的第二触点，形成在第一信息存储部 与基板电连接并与第一触点电连接的第一高度，以及形成在与第一高度不同的第二高度处的与第二触点电连接的第二信息存储部。

    Methods of forming pattern structures
    3.
    发明授权
    Methods of forming pattern structures 有权
    形成图案结构的方法

    公开(公告)号：US08334148B2

    公开(公告)日：2012-12-18

    申请号：US13184127

    申请日：2011-07-15

    申请人： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

    发明人： Jun-Ho Jeong ,  Jang-Eun Lee ,  Woo-Jin Kim ,  Hee-Ju Shin ,  Yong-Hwan Ryu

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  H01L43/12

    摘要： An example embodiment relates to a method of forming a pattern structure, including forming an object layer on a substrate, and forming a hard mask on the object layer. A plasma reactive etching process is performed on the object layer using an etching gas including a fluorine containing gas and ammonia (NH3) gas together with oxygen gas to form a pattern. The oxygen gas is used for suppressing the removal of the hard mask during the etching process.

    摘要翻译： 示例性实施例涉及一种形成图案结构的方法，包括在基底上形成物体层，并在物体层上形成硬掩模。 使用包含含氟气体和氨（NH 3）气体的蚀刻气体与氧气一起在物体层上进行等离子体反应蚀刻工艺以形成图案。 氧气用于在蚀刻过程中抑制硬掩模的去除。

    METHOD OF FABRICATING SEMICONDUCTOR DEVICE
    4.
    发明申请
    METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号：US20110189851A1

    公开(公告)日：2011-08-04

    申请号：US13016228

    申请日：2011-01-28

    申请人： Jun-Ho JEONG ,  Jang-Eun Lee ,  Se-Chung Oh ,  Suk-Hun Choi ,  Jea-Hyoung Lee ,  Woo-Jin Kim ,  Woo-Chang Lim

    发明人： Jun-Ho JEONG ,  Jang-Eun Lee ,  Se-Chung Oh ,  Suk-Hun Choi ,  Jea-Hyoung Lee ,  Woo-Jin Kim ,  Woo-Chang Lim

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28

    摘要： A method of fabricating a semiconductor device, the method including providing a substrate; forming an underlying layer on the substrate; forming a sacrificial layer on the underlying layer; forming an opening in the sacrificial layer by patterning the sacrificial layer such that the opening exposes a predetermined region of the underlying layer; forming a mask layer in the opening; forming an oxide mask by partially or completely oxidizing the mask layer; removing the sacrificial layer; and etching the underlying layer using the oxide mask as an etch mask to form an underlying layer pattern.

    摘要翻译： 一种制造半导体器件的方法，所述方法包括提供衬底; 在衬底上形成下层; 在下层上形成牺牲层; 通过图案化所述牺牲层在所述牺牲层中形成开口，使得所述开口暴露所述下层的预定区域; 在开口中形成掩模层; 通过部分或完全氧化掩模层形成氧化物掩模; 去除牺牲层; 并使用氧化物掩模作为蚀刻掩模蚀刻下层，以形成下层图案。

    Method and apparatus to automatically control power of address data for plasma display panel, and plasma display panel device including the apparatus
    5.
    发明申请
    Method and apparatus to automatically control power of address data for plasma display panel, and plasma display panel device including the apparatus 审中-公开
    用于自动控制等离子体显示面板的地址数据的功率的方法和装置，以及包括该装置的等离子体显示面板装置

    公开(公告)号：US20080284711A1

    公开(公告)日：2008-11-20

    申请号：US12153264

    申请日：2008-05-15

    申请人： Ji-Hwan Seol ,  Woo-Jin Kim ,  Jung-Eun Park ,  Moo-Yong Hyun

    发明人： Ji-Hwan Seol ,  Woo-Jin Kim ,  Jung-Eun Park ,  Moo-Yong Hyun

    IPC分类号： G09G3/36

    CPC分类号： G09G3/294 ,  G09G3/2059 ,  G09G3/293 ,  G09G2310/0218 ,  G09G2330/021 ,  G09G2360/16

    摘要： A method and apparatus for automatically controlling power of address data in a plasma display panel (PDP), and a PDP device including the apparatus are provided. In this method, first, a difference-sum of pixel value differences between adjacent pixels successively arranged along a column of block is calculated. Then, an address power control level corresponding to the calculated difference-sum for each block is determined. Thereafter, gain information for each block on the basis of the address power control level for each block is determined. Next, a gain for each block corresponding to the gain information for each block is output. Then, the input image signal is multiplied by the gain for each block to correct the input image signal to output the corrected image signal. Accordingly, power consumption, noise, and generation of heat are reduced, and also the brightness is improved.

    摘要翻译： 提供一种用于自动控制等离子体显示面板（PDP）中的地址数据的功率的方法和装置，以及包括该装置的PDP装置。 在该方法中，首先，计算沿着一列的连续排列的相邻像素之间的像素值差的差分和。 然后，确定与每个块的计算差分和相对应的地址功率控制电平。 此后，确定基于每个块的地址功率控制电平的每个块的增益信息。 接下来，输出与每个块的增益信息相对应的每个块的增益。 然后，输入图像信号乘以每个块的增益以校正输入图像信号以输出校正的图像信号。 因此，能量消耗，噪声和热量的产生减少，亮度提高。

    Driving method of plasma display panel
    6.
    发明申请
    Driving method of plasma display panel 失效

    公开(公告)号：US20060103600A1

    公开(公告)日：2006-05-18

    申请号：US11269587

    申请日：2005-11-09

    申请人： Seung-Woo Chang ,  Woo-Jin Kim ,  Chee-Young Yoon

    发明人： Seung-Woo Chang ,  Woo-Jin Kim ,  Chee-Young Yoon

    IPC分类号： G09G3/28

    CPC分类号： G09G3/2944 ,  G09G3/2942 ,  G09G2360/16

    摘要： A driving method of a plasma display panel in which scan electrode lines and sustain electrode lines are parallel to each other and address electrode lines are spaced from and intersect the scan electrode lines and the sustain electrode lines, includes temporally dividing a unit frame into a plurality of subfields, generating a driving signal having a reset period, an address period, and a sustain period for each subfield, detecting an average signal level for the unit frame, alternately applying a first sustain pulse which reaches a first voltage with a rising slope and a second sustain pulse which reaches a ground voltage with a falling slope to the scan electrode lines and the sustain electrode lines, and controlling a timing of alternately applying in accordance with the average signal level for the unit frame.

    Method for fabricating nonvolatile memory device
    8.
    发明授权
    Method for fabricating nonvolatile memory device 有权
    非易失性存储器件的制造方法

    公开(公告)号：US09224787B2

    公开(公告)日：2015-12-29

    申请号：US14193877

    申请日：2014-02-28

    申请人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

    发明人： Whan-Kyun Kim ,  Young-Hyun Kim ,  Woo-Jin Kim

    IPC分类号： H01L21/00 ,  H01L27/22 ,  H01L43/12

    CPC分类号： H01L27/228 ,  H01L43/12

    摘要： A method for fabricating a nonvolatile memory device is provided. The method includes forming a transistor including an impurity region formed in a substrate, forming a first interlayer insulation layer covering the transistor, the first interlayer insulation layer including a protrusion overlapping the impurity region, and forming an information storage unit on the protrusion, the information storage unit exposing side surfaces of the protrusion using point cusp magnetron-physical vapor deposition (PCM-PVD) and electrically connected to the impurity region.

    摘要翻译： 提供一种制造非易失性存储器件的方法。 该方法包括形成晶体管，其包括在衬底中形成的杂质区，形成覆盖晶体管的第一层间绝缘层，第一层间绝缘层包括与杂质区重叠的突起，以及在突起上形成信息存储单元， 存储单元使用尖点磁控管 - 物理气相沉积（PCM-PVD）暴露突起的侧表面并电连接到杂质区。