摘要:
A method for manufacturing an oxide thin film transistor includes the steps of forming an oxide semiconductor active layer by a deposition process. In the deposition process, a total flow rate of a gas is more than 100 standard cubic centimeters per minute and an electric power is in a range from 1.5 kilowatts to 10 kilowatts. The oxide thin film transistor manufactured by the above methods has advantages of low leakage currents, high electron mobility, and excellent temperature stability. The present invention also provides a method for manufacturing a display device. The display quality of the display device can be improved.
摘要:
The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.
摘要:
An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film.
摘要:
A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.
摘要:
A service platform utilizing an electronic paper device for financial institutions, comprising: an option input device, used for sensing an entry operation and outputting a financial business option signal accordingly; a control unit, having an option input interface, a display interface, a host interface, and a slips storage unit, wherein the option input interface is used to receive the financial business option signal, the host interface is used to communicate with a financial institution host, the slips storage unit is used to store financial business slips; and an electronic paper device, having a touch input function, coupled to the display interface to display one financial business slip for related information input by a touch pen, or transmit the related information through the control unit to the financial institution host, or display an informing message sent from the financial institution host through the control unit.
摘要:
A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.
摘要:
A method for manufacturing a color electrophoretic display device includes the following steps. First, a substrate having a displaying region and a circuit region around the displaying region is provided. Next, a driving array is formed in the displaying region. Subsequently, an electrophoretic display layer is formed on the driving array. Afterwards, a thermal transfer process is performed so that a color filter layer is formed on the electrophoretic display layer. The method can increase the production eligibility rate of the color electrophoretic display device, thereby improving the display quality of the color electrophoretic display device.
摘要:
A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.
摘要:
A thin film transistor suitable for being disposed on a substrate is provided. The thin film transistor includes a gate electrode, an organic gate dielectric layer, a metal oxide semiconductor layer, a source electrode and a drain electrode. The gate electrode is disposed on the substrate. The organic gate dielectric layer is disposed on the substrate to cover the gate electrode. The source electrode, the drain electrode and the metal oxide semiconductor layer are disposed above the organic gate dielectric layer, and the metal oxide semiconductor layer contacts with the source electrode and the drain electrode. Because the channel layer of the thin film transistor is a layer of metal oxide semiconductor formed at a lower temperature, thus the thin film transistor can be widely applied into various display applications such as flexible display devices.
摘要:
A three-dimension circuit structure includes a substrate, a first conductive layer, a filled material and a second conductive layer. The substrate has an upper surface and a cavity located at the upper surface. The first conductive layer covers the inside walls of the cavity and protrudes out the upper surface. The filled material fills the cavity and covers the first conductive layer. The second conductive layer covers the filled material and a portion of the first conductive layer, and the first conductive layer and the second conductive layer encapsulate the filled material. The material of the filled material is different from that of the first conductive layer and the second conductive layer.