公开(公告)号：US20070230517A1

公开(公告)日：2007-10-04

申请号：US11723932

申请日：2007-03-22

申请人： Yasushi Matsuda ,  Hidenori Shimada

发明人： Yasushi Matsuda ,  Hidenori Shimada

IPC分类号： H01S3/30

CPC分类号： G02B6/4296 ,  B23K26/064 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/0665 ,  G02B6/02366 ,  G02B6/262 ,  H01S3/067 ,  H01S3/06708 ,  H01S3/094003

摘要： An end cap is formed as a substantially cylindrical body having substantially the same diameter as an external diameter of a retaining unit of an oscillation fiber; a base end surface is integrally fusion-welded or fusion-bonded to one end surface of the oscillation fiber; and a leading end surface is obliquely cut relative to the light axis. A returning oscillating beam reflected by an optical resonator mirror is converged and made incident on a core end surface of the oscillation fiber 22 located at a focus position of an optical lens. However, since the core end surface is integrally bonded with the end cap and is not exposed to the atmosphere, the core end surface is not burned or deteriorated by the light energy of the oscillating beam.

摘要翻译： 端盖形成为具有与振荡光纤的保持单元的外径基本相同的直径的大致圆筒体; 基端面与振荡光纤的一个端面整体熔接或熔接; 并且前端面相对于光轴倾斜切割。 由光谐振镜反射的返回振荡光束会聚并入射到位于光学透镜焦点位置的振荡光纤22的芯端表面。 然而，由于芯端面与端盖一体地结合并且不暴露于大气中，所以芯端面不被振荡梁的光能烧毁或劣化。

公开(公告)号：US20050196935A1

公开(公告)日：2005-09-08

申请号：US11108827

申请日：2005-04-19

申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

IPC分类号： H01L21/31 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232 ,  H01L21/76235 ,  H01L29/78

摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

公开(公告)号：US06881646B2

公开(公告)日：2005-04-19

申请号：US10392916

申请日：2003-03-21

申请人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

发明人： Norio Ishitsuka ,  Hideo Miura ,  Shuji Ikeda ,  Norio Suzuki ,  Yasushi Matsuda ,  Yasuko Yoshida ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Akira Takamatsu ,  Hirofumi Shimizu ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

IPC分类号： H01L21/31 ,  H01L21/76 ,  H01L21/762

CPC分类号： H01L21/76232 ,  H01L21/76235 ,  H01L29/78

摘要： A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.

摘要翻译： 一种制造半导体器件的方法，该半导体器件具有高度可靠的凹槽隔离结构，其具有在凹槽上边缘处形成的所需曲率半径，并且不形成任何步骤。 通过减小半导体衬底上的元件隔离槽的槽上边缘周围的应力产生，从而优化元件隔离槽的形状并使器件更精细并提高器件电气特性来制造器件。

公开(公告)号：US6057241A

公开(公告)日：2000-05-02

申请号：US66757

申请日：1998-04-27

申请人： Yasushi Matsuda ,  Hideo Miura ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Shuji Ikeda ,  Akira Takamatsu ,  Norio Suzuki ,  Hirofumi Shimizu ,  Yasuko Yoshida ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

发明人： Yasushi Matsuda ,  Hideo Miura ,  Hirohiko Yamamoto ,  Masamichi Kobayashi ,  Shuji Ikeda ,  Akira Takamatsu ,  Norio Suzuki ,  Hirofumi Shimizu ,  Yasuko Yoshida ,  Kazushi Fukuda ,  Shinichi Horibe ,  Toshio Nozoe

IPC分类号： H01L21/76 ,  H01L21/477

CPC分类号： H01L21/477 ,  H01L21/76

摘要： A silicon oxide film 2 which is exposed from a side wall of a groove 4a is etched to displace the silicon oxide film 2 backward toward an active region. The displacement amount is set to be equal to or more than a film thickness (Tr) of a silicon oxide film 5 to be formed on an inner wall of the groove 4a in a later thermal oxidation step and equal to or less than twice the film thickness (Tr) thereof. A shoulder portion of the groove 4a can be rounded by a low-temperature heat treatment at 1000.degree. C. or less, by controlling a heat treatment period such that the film thickness (Tr) of the silicon oxide film 5 is more than the film thickness (Tp) of the silicon oxide film 2 and equal to or less than three times the film thickness (Tr) thereof (Tp

摘要翻译： 蚀刻从槽4a的侧壁露出的氧化硅膜2，使氧化硅膜2朝向有源区域反向移动。 位移量被设定为等于或大于在随后的热氧化步骤中形成在凹槽4a的内壁上的氧化硅膜5的膜厚度（Tr），并且等于或小于两倍的膜 厚度（Tr）。 通过控制热处理时间使得氧化硅膜5的膜厚（Tr）大于膜的厚度（Tr），可以通过在1000℃以下的低温热处理使槽4a的肩部成圆形 氧化硅膜2的厚度（Tp）等于或小于其厚度（Tr）的三倍（Tp

公开(公告)号：US5944917A

公开(公告)日：1999-08-31

申请号：US865103

申请日：1997-05-29

申请人： Kiyoko Takeda ,  Shigeki Azuma ,  Yoshio Tarutani ,  Yoshitaka Nishiyama ,  Yasushi Matsuda

发明人： Kiyoko Takeda ,  Shigeki Azuma ,  Yoshio Tarutani ,  Yoshitaka Nishiyama ,  Yasushi Matsuda

IPC分类号： C21D1/76 ,  C21D6/00 ,  C22C38/00 ,  C22C38/06 ,  C22C38/18 ,  C22C38/34 ,  C22C38/42 ,  C22C38/44 ,  C23C8/18 ,  C25D11/34 ,  C23C8/00

CPC分类号： C23C8/18 ,  C21D6/004 ,  C22C38/004 ,  C22C38/06 ,  C22C38/18 ,  C22C38/34 ,  C22C38/42 ,  C22C38/44 ,  C25D11/34 ,  C21D1/76 ,  C21D6/002

摘要： A stainless steel having excellent corrosion resistance to ozone added water, such as ozone added ultrapure water used in semiconductor manufacturing processes and the like, as well as a manufacturing method. The stainless steel comprises a base metal and an oxide film formed on the surface of the base metal, the base metal being a stainless steel which contains 12 to 30% of Cr, 0 to 35% of Ni, and 1 to 6% of Al and Si while the contents of the other alloying elements are limited to as low a level as possible, the oxide film mainly comprising Al oxide or a Si oxide or both. The oxide film may be formed on the base metal surface through the dry oxidation process or the wet oxidation process. In the stainless steel, metallic ions are rarely dissolved from the base metal into the ozone added water. Also, since the contents of alloying elements, other than Cr, Ni, Al, Si, and like necessary elements, are limited to a low level, the stainless steel exhibits excellent corrosion resistance and reduced particle emission.

摘要翻译： 具有优异的耐臭氧性的不锈钢，例如在半导体制造工艺中使用的加入臭氧的超纯水等，以及制造方法。 该不锈钢包括在母材表面形成的贱金属和氧化膜，贱金属为不锈钢，含有12〜30％的Cr，0〜35％的Ni和1〜6％的Al 和Si，而其它合金元素的含量被限制在尽可能低的水平，氧化物膜主要包含Al氧化物或Si氧化物或两者。 氧化膜可以通过干式氧化法或湿式氧化法在母材表面上形成。 在不锈钢中，金属离子很少从母体金属中溶解到加入臭氧的水中。 此外，由于除了Cr，Ni，Al，Si等必需元素以外的合金元素的含量被限制在低水平，所以不锈钢表现出优异的耐腐蚀性和减少的颗粒发射。

公开(公告)号：US4432321A

公开(公告)日：1984-02-21

申请号：US312915

申请日：1981-10-19

申请人： Yasushi Matsuda ,  Shizuo Kawai

发明人： Yasushi Matsuda ,  Shizuo Kawai

IPC分类号： F02D1/02 ,  F02D1/06 ,  F02M41/12

CPC分类号： F02M41/126 ,  F02D1/02 ,  F02D1/06

摘要： A fuel injection pump device for an internal combustion engine, in which a mechanical correcting signal continuously generated from a bellows in response to change in atmospheric pressure is transmitted to an adjusting member associated with a pump to adjust an amount of fuel injected into the engine by the pump. Transmission of the mechanical correcting signal from the bellows is limited such that the mechanical correcting signal is allowed to be transmitted to the adjusting member in a range in which the atmospheric pressure is below a predetermined level, but is prevented from being transmitted to the adjusting member when the atmospheric pressure is above the predetermined level.

摘要翻译： 一种用于内燃机的燃料喷射泵装置，其中响应于大气压力的变化而从波纹管连续产生的机械校正信号被传递到与泵相关联的调节构件，以通过以下方式调节喷射到发动机中的燃料量： 泵。 来自波纹管的机械校正信号的传输受到限制，使得机械校正信号被允许在大气压力低于预定水平的范围内传递到调节构件，但是防止其被传递到调节构件 当大气压力高于预定水平时。