Abstract:
An organic light-emitting display apparatus is disclosed. In one embodiment, the display apparatus includes i) a substrate and ii) an organic light-emitting device formed on the substrate, the organic light-emitting device including a stack structure including a first electrode, an organic light-emitting layer, and a second electrode. The apparatus may further include a sealing layer formed on the substrate so as to cover the organic light-emitting device, the sealing layer including an inorganic layer and a porous layer interposed between the sealing layer and the organic light-emitting device. One embodiment can reduce a stress due to a sealing inorganic layer so as to maintain characteristics for a long time in a severe environment and not affect an organic light-emitting device.
Abstract:
A manufacturing method of an OLED display is provided. The method includes: forming an organic emission layer and a thin film encapsulation layer covering the organic emission layer on a substrate including a pixel area and a peripheral area; adhering a laminating film including a plurality of adhesive layers and an upper protective layer that covers an upper adhesive layer from among the adhesive layers on the thin film encapsulation layer, a lower adhesive layer from among the adhesive layers contacting the thin film encapsulation layer; radiating UV light on the laminating film that corresponds to the peripheral area of the substrate to decrease adhesion between the lower adhesive layer and the thin film encapsulation layer corresponding to the peripheral area; and peeling the laminating film corresponding to the peripheral area from the thin film encapsulation layer to maintain the laminating film that corresponds to the pixel area.
Abstract:
Disclosed are a passivation film for an electronic device having a nitride film formed on a substrate by a plasma-enhanced chemical vapor deposition (PECVD) method using a silicon-containing gas and a nitrogen-containing gas and a plasma-processed film formed by plasma processing a surface of the nitride film by a PECVD method using an NH3 gas, an N2 gas, and a H2 gas, and a method of manufacturing the passivation film.
Abstract:
An organic light emitting diode (OLED) display a includes: a substrate; an organic light emitting element on the substrate and including a first electrode, a light emission layer, and a second electrode; and an encapsulation layer on the substrate while covering the organic light emitting element. The encapsulation layer includes an organic layer and an inorganic layer. A mixed area, where organic materials forming the organic layer and inorganic materials forming the inorganic layer co-exist along a plane direction of the encapsulation layer, is formed at the boundary between the organic layer and the inorganic layer.
Abstract:
An organic light-emitting display apparatus is disclosed. In one embodiment, the display apparatus includes i) a substrate and ii) an organic light-emitting device formed on the substrate, the organic light-emitting device including a stack structure including a first electrode, an organic light-emitting layer, and a second electrode. The apparatus may further include a sealing layer formed on the substrate so as to cover the organic light-emitting device, the sealing layer including an inorganic layer and a porous layer interposed between the sealing layer and the organic light-emitting device. One embodiment can reduce a stress due to a sealing inorganic layer so as to maintain characteristics for a long time in a severe environment and not affect an organic light-emitting device.
Abstract:
A thin film transistor includes a channel layer including an amorphous 12CaO.7Al2O3 (C12A7) and a flat panel display device including the same. According to the present invention, the amorphous channel layer can be formed at a low temperature using C12A7. The thin film transistor including the amorphous channel layer has excellent electron mobility.
Abstract:
A method of manufacturing an organic light-emitting device, the method including: forming an anode; forming an intermediate layer comprising an emission layer on the anode; and forming a cathode on the intermediate layer, wherein the forming of the cathode comprises thermally depositing indium or indium oxide, with at least one of a metal or a metal oxide in plasma generated in a chamber to form a transparent conductive layer of indium oxide doped with the at least one of the metal or the metal oxide.
Abstract:
An organic light emitting diode (OLED) including a first electrode formed on a substrate; an intermediate layer formed on the first electrode and including an organic emission layer; and a second electrode formed on the intermediate layer, wherein at least one from among the first electrode and the second electrode is formed as a transparent electrode including a material selected from the group consisting of MoOx, WOx, YbOx, ReOx, GeOx, and combinations thereof. In this manner, the performance of the transparent electrode is enhanced.
Abstract:
A polysilsesquioxane copolymer, a polysilsesquioxane copolymer including the same, an organic light emitting diode display including the same, and associated methods, the polysilsesquioxane copolymer including a copolymer including repeating units derived from a first monomer selected from the group consisting of alkoxyphenyltrialkoxysilane, alkoxyphenylalkyltrialkoxysilane, alkoxycarbonylphenyltrialkoxysilane, and alkoxycarbonylphenylalkyltrialkoxysilane, and repeating units derived from a second monomer including an α,ω-bis(trialkoxysilyl) compound monomer.
Abstract:
An organic light emitting device including an anode having a high light transmissivity and a controllable work function, and allowing for a high degree of freedom for selection of a cathode, and a method of manufacturing the same. The anode of the organic light emitting device includes a first layer. The first layer includes a first metal oxide, and a second metal oxide differing from the first metal oxide and doped into the first metal oxide. The cathode faces the anode, and an organic layer including an emission layer between the anode and the cathode.