公开(公告)号：US20110290320A1

公开(公告)日：2011-12-01

申请号：US13137215

申请日：2011-07-28

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/0224 ,  H01L31/0256 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/547 ,  Y02P70/521

摘要： A method for producing a single crystal silicon solar cell including the steps of: implanting ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; forming a transparent electroconductive film on a surface of a transparent insulator substrate; conducting a surface activating treatment for the ion implanting surface of the single crystal silicon substrate and/or a surface of the transparent electroconductive film on the transparent insulator substrate; bonding the ion implanting surface of the single crystal silicon substrate and the surface of the transparent electroconductive film on the transparent insulator substrate to each other; applying an impact to the ion implanted layer; and forming a p-n junction in the single crystal silicon layer.

公开(公告)号：US07935611B2

公开(公告)日：2011-05-03

申请号：US12282176

申请日：2007-03-12

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/46 ,  H01L31/00

CPC分类号： H01L21/76254 ,  H01L31/0687 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/544 ,  Y02E10/547 ,  Y02P70/521

摘要： A silicon layer having a conductivity type opposite to that of a bulk is provided on the surface of a silicon substrate and hydrogen ions are implanted to a predetermined depth into the surface region of the silicon substrate through the silicon layer to form a hydrogen ion-implanted layer. Then, an n-type germanium-based crystal layer whose conductivity type is opposite to that of the silicon layer and a p-type germanium-based crystal layer whose conductivity type is opposite to that of the germanium-based crystal layer are successively vapor-phase grown to provide a germanium-based crystal. The surface of the germanium-based crystal layer and the surface of the supporting substrate are bonded together. In this state, impact is applied externally to separate a silicon crystal from the silicon substrate along the hydrogen ion-implanted layer, thereby transferring a laminated structure composed of the germanium-based crystal and the silicon crystal onto the supporting substrate.

摘要翻译： 在硅衬底的表面上提供具有与体的导电类型相反的导电类型的硅层，并且通过硅层将氢离子注入到硅衬底的表面区域中以预定深度注入到氢离子注入 层。 然后，其导电类型与硅层的导电类型相反的n型锗基晶体层和导电类型与锗基晶体层的导电类型相反的p型锗基晶体层连续蒸发， 相生长以提供锗基晶体。 锗基晶体层的表面和支撑基板的表面接合在一起。 在这种状态下，外部施加冲击以沿着氢离子注入层从硅衬底分离硅晶体，从而将由锗基晶体和硅晶体组成的叠层结构转移到支撑衬底上。

公开(公告)号：US07790571B2

公开(公告)日：2010-09-07

申请号：US11984184

申请日：2007-11-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/78

CPC分类号： H01L21/3247 ,  H01L21/76254 ,  H01L29/78603

摘要： A method of manufacturing an SOQ substrate and an SOQ substrate manufactured by the same are disclosed. In the method, hydrogen ions are implanted to a surface of a single crystal Si substrate through an oxide film to uniformly form an ion implanted layer at a predetermined depth from the surface of the single crystal Si substrate, and a bonding surface of the substrate undergoes a plasma treatment or an ozone treatment. An external shock is applied onto the single crystal Si substrate and quartz substrate, which are bonded together, to mechanically delaminate a silicon film from a single crystal silicon bulk. In this way, the SOQ film is formed on the quartz substrate through the oxide film. To further smooth the SOQ film surface, hydrogen heat treatment is performed at a temperature of 1000° C. or less below a quartz glass transition point.

摘要翻译： 公开了一种制造其制造的SOQ基板和SOQ基板的方法。 在该方法中，通过氧化膜将氢离子注入到单晶Si衬底的表面，以在与单晶Si衬底的表面规定深度均匀地形成离子注入层，并且衬底的接合表面经历 等离子体处理或臭氧处理。 外部冲击被施加到结合在一起的单晶Si衬底和石英衬底上，从而将硅膜从单晶硅体块分层。 以这种方式，通过氧化膜在石英衬底上形成SOQ膜。 为了进一步平滑SOQ膜表面，在石英玻璃化转变点以下1000℃以下的温度下进行氢热处理。

公开(公告)号：US07749870B2

公开(公告)日：2010-07-06

申请号：US12383834

申请日：2009-03-27

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Hiroshi Tamura

IPC分类号： H01L21/322

CPC分类号： H01L21/76254 ,  Y10S438/964 ,  Y10S438/967

摘要： Provided is a method for producing an SOI substrate comprising a transparent insulating substrate and a silicon film formed on a first major surface of the insulating substrate wherein a second major surface of the insulating substrate which is opposite to the major surface is roughened, the method suppressing the generation of metal impurities and particles in a simple and easy way. More specifically, provided is a method for producing an SOI substrate comprising a transparent insulating substrate, a silicon film formed on a first major surface of the transparent insulating substrate, and a roughened second major surface, which is opposite to the first major surface, the method comprising steps of: providing the transparent insulating substrate, mirror surface-processing at least the first major surface of the transparent insulating substrate, forming a silicon film on the first major surface of the transparent insulating substrate, and laser-processing the second major surface of the transparent insulating substrate so as to roughen the second major surface by using a laser.

摘要翻译： 提供一种制造SOI基板的方法，该SOI基板包括透明绝缘基板和形成在绝缘基板的第一主表面上的硅膜，其中绝缘基板的与主表面相对的第二主表面被粗糙化，该方法抑制 以简单方便的方式生成金属杂质和颗粒。 更具体地说，提供一种SOI基板的制造方法，其包括透明绝缘基板，形成在透明绝缘基板的第一主表面上的硅膜和与第一主表面相对的粗糙化的第二主表面， 方法包括以下步骤：提供透明绝缘基板，至少透明绝缘基板的第一主表面进行镜面处理，在透明绝缘基板的第一主表面上形成硅膜，并且对第二主表面进行激光加工 的透明绝缘基板，以便通过使用激光使第二主表面粗糙化。

公开(公告)号：US20100025804A1

公开(公告)日：2010-02-04

申请号：US12158047

申请日：2006-11-01

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： H01L21/762 ,  H01L27/12

CPC分类号： H01L21/76254

摘要： On the side of a surface (the bonding surface side) of a single crystal Si substrate, a uniform ion implantation layer is formed at a prescribed depth (L) in the vicinity of the surface. The surface of the single crystal Si substrate and a surface of a transparent insulating substrate as bonding surfaces are brought into close contact with each other, and bonding is performed by heating the substrates in this state at a temperature of 350° C. or below. After this bonding process, an Si—Si bond in the ion implantation layer is broken by applying impact from the outside, and a single crystal silicon thin film is mechanically peeled along a crystal surface at a position equivalent to the prescribed depth (L) in the vicinity of the surface of the single crystal Si substrate.

摘要翻译： 在单晶Si衬底的表面（接合面侧）侧，在表面附近以规定的深度（L）形成均匀的离子注入层。 单晶Si衬底的表面和作为结合面的透明绝缘衬底的表面彼此紧密接触，并且通过在350℃或更低的温度下在该状态下加热衬底来进行接合。 在该接合工艺之后，通过从外部施加冲击来破坏离子注入层中的Si-Si键，并且在等于规定深度（L）的位置上的晶体表面机械剥离单晶硅薄膜 单晶Si衬底表面附近。

公开(公告)号：US07615456B2

公开(公告)日：2009-11-10

申请号：US12076923

申请日：2008-03-25

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/331 ,  H01L21/8222

CPC分类号： H01L21/76256 ,  H01L27/12

摘要： A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.

摘要翻译： 提供一种制造SOI衬底的方法，该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚均匀性和电阻率均匀性优异的SOI衬底。 在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后，将单晶Si衬底10贴在石英 基板20在室温下结合。 从其背面对单晶硅基板10进行化学蚀刻，将其厚度设定为L以下。 对含氢气氛中的SOI衬底进行热处理，从高浓度硼添加p层11向外扩散B，从而获得具有所需电阻值的添加硼的p层12。 在该热处理中，Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部，并且在高浓度硼添加p层11中的B浓度降低。 就此时的热处理温度而言，考虑到绝缘基板的软化点，将热处理温度的上限设定为1250℃，选择700℃为下限值 B可以扩散的温度。

公开(公告)号：US20090221131A1

公开(公告)日：2009-09-03

申请号：US12380090

申请日：2009-02-24

申请人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

发明人： Yoshihiro Kubota ,  Makoto Kawai ,  Kouichi Tanaka ,  Yuji Tobisaka ,  Shoji Akiyama ,  Yoshihiro Nojima

IPC分类号： H01L21/36

CPC分类号： C30B31/20 ,  C30B19/12 ,  C30B23/025 ,  C30B25/183 ,  C30B29/04 ,  C30B29/06 ,  C30B29/16 ,  C30B29/36 ,  C30B29/40 ,  C30B33/02 ,  C30B33/06 ,  H01L21/76254

摘要： Provided is a method for easily preparing a substrate comprising a monocrystalline film thereon or thereabove with almost no crystal defects without using a special substrate. More specifically, provided is a method for preparing a substrate comprising a monocrystalline film formed on or above a handle substrate, the method comprising: a step A of providing a donor substrate and the handle substrate; a step B of growing a monocrystalline layer on the donor substrate; a step C of implanting ions into the monocrystalline layer on the donor substrate so as to form an ion-implanted layer; a step D of bonding a surface of the monocrystalline layer of the ion-implanted donor substrate to a surface of the handle substrate; and a step E of peeling the bonded donor substrate at the ion-implanted layer existing in the monocrystalline layer so as to form the monocrystalline film on or above the handle substrate; wherein at least the steps A to E are repeated by using the handle substrate having the monocrystalline film formed thereon or thereabove as a donor substrate.

摘要翻译： 提供一种在不使用特殊基板的情况下容易地制备其上或其上的单晶膜几乎没有晶体缺陷的基板的方法。 更具体地，提供了一种制备包括在手柄基板上或上方形成的单晶膜的基板的方法，所述方法包括：提供施主基板和所述手柄基板的工序A; 在施主衬底上生长单晶层的步骤B; 将离子注入施主衬底上的单晶层中以形成离子注入层的步骤C; 将离子注入的施主基板的单晶层的表面接合到手柄基板的表面的工序D; 以及在存在于单晶层中的离子注入层剥离键合的供体基板以在手柄基板上或上方形成单晶膜的步骤E; 其中通过使用其上形成有单晶膜的处理衬底或其上方作为施主衬底来重复步骤A至E的至少一个。

公开(公告)号：US20090111242A1

公开(公告)日：2009-04-30

申请号：US12230984

申请日：2008-09-09

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： An object of the present invention is to provide a method by which bonding at a low temperature is possible and an amount of metal contaminants in an SOI film is decreased. An embodiment of the present invention is realized in the following manner. A single crystal silicon substrate 10 surface-activated by a plasma-treatment and a quartz substrate 20 are bonded together at a low temperature, to which an external impact is given to mechanically delaminate silicon film from a single crystal silicon bulk thereby obtaining a semiconductor substrate (SOI substrate) having a silicon film (SOI film) 12. Next, the SOI substrate is subjected to a heat-treatment at a temperature of 600° C. to 1250° C. so that metal impurities accidentally mixed into an interface of the SOI film and the quartz substrate and into the SOI film in such a step as a plasma-treatment are gettered to a surface region of the silicon film 12. Then, in the end, a surface layer (gettering layer) of the silicon film 12 of the SOI substrate after the heat-treatment is removed to finally prepare an SOI film 13 and a semiconductor substrate (SOI substrate) is obtained.

摘要翻译： 本发明的目的是提供一种可以在低温下进行接合并降低SOI膜中的金属污染物的量的方法。 以下述方式实现本发明的实施例。 通过等离子体处理表面激活的单晶硅衬底10和石英衬底20在低温下被接合在一起，对其进行外部冲击以将硅膜从单晶硅体层剥离，从而获得半导体衬底 （SOI衬底）12。接下来，将SOI衬底在600℃至1250℃的温度下进行热处理，使得金属杂质意外地混入到 SOI膜和石英衬底以及诸如等离子体处理的步骤中的SOI膜被吸收到硅膜12的表面区域。然后，最后，将硅膜12的表面层（吸气层） 的SOI基板，最终制作SOI膜13，得到半导体基板（SOI基板）。

公开(公告)号：US20090061591A1

公开(公告)日：2009-03-05

申请号：US12162134

申请日：2007-02-08

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： A hydrogen ion-implanted layer is formed on the surface side of a first substrate which is a single-crystal silicon substrate. At least one of the surface of a second substrate, which is a transparent insulating substrate, and the surface of the first substrate is subjected to surface activation treatment, and the two substrates are bonded together. The bonded substrate composed of the single-crystal Si substrate and the transparent insulating substrate thus obtained is mounted on a susceptor and is placed under an infrared lamp. Light having a wave number range including an Si—H bond absorption band is irradiated at the bonded substrate for a predetermined length of time to break the Si—H bonds localized within a “microbubble layer” in the hydrogen ion-implanted layer, thereby separating a silicon thin film layer.

摘要翻译： 在作为单晶硅衬底的第一衬底的表面侧上形成氢离子注入层。 作为透明绝缘基板的第二基板的表面和第一基板的表面中的至少一个进行表面活化处理，并且将两个基板接合在一起。 将由单晶Si衬底和由此获得的透明绝缘衬底构成的键合衬底安装在基座上并放置在红外灯下。 在键合衬底上照射具有Si-H键吸收带的波数范围的光，以预定的时间长度，以破坏位于氢离子注入层中的“微泡层”内的Si-H键，从而分离 硅薄膜层。

公开(公告)号：US20080251192A1

公开(公告)日：2008-10-16

申请号：US12078276

申请日：2008-03-28

申请人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

发明人： Makoto Kawai ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Shoji Akiyama

IPC分类号： B32B38/10

CPC分类号： H01L21/76254 ,  C23C14/48

摘要： Wettability of a PBN material surface with respect to a metal is improved to expand use applications. Hydrogen ions are implanted into a surface of a silicon substrate 10 to form an ion implanted region 11 at a predetermined depth near a surface of the silicon substrate 10, and a plasma treatment or an ozone treatment is performed with respect to a main surface of the silicon substrate 10 for the purpose of surface cleaning or surface activation. The main surfaces of the silicon substrate 10 and a PBN substrate 20 subjected to the surface treatment are appressed against each other to be bonded at a room temperature, and an external impact shock is given to the bonded substrate to mechanically delaminate a silicon film 12 from a bulk 13 of the silicon substrate to be transferred. An obtained PBN composite substrate 30 is diced to form a chip having a desired size, and a refractory metal is metallized on the silicon film 12 side to be connected with a wiring material.

摘要翻译： PBN材料表面相对于金属的润湿性得到改善以扩大使用应用。 将氢离子注入到硅衬底10的表面中以在硅衬底10的表面附近的预定深度处形成离子注入区11，并且相对于硅衬底10的主表面进行等离子体处理或臭氧处理 硅基板10，用于表面清洁或表面活化。 经过表面处理的硅衬底10和PBN衬底20的主表面在室温下相互粘合，并且对键合衬底施加外部冲击冲击，从而将硅膜12从 待转移的硅衬底的体积13。 将获得的PBN复合基板30切割成具有所需尺寸的芯片，并且将难熔金属在硅膜12侧金属化以与布线材料连接。