利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

42 条记录 (耗时 0.035 秒)

    METHOD OF MANUFACTURING A NEAR-FIELD LIGHT GENERATOR INCLUDING A WAVEGUIDE AND A PLASMON GENERATOR
    32.
    发明申请
    METHOD OF MANUFACTURING A NEAR-FIELD LIGHT GENERATOR INCLUDING A WAVEGUIDE AND A PLASMON GENERATOR 有权
    一种包括波导和等离子发生器在内的近场光发生器的制造方法

    公开(公告)号：US20140291284A1

    公开(公告)日：2014-10-02

    申请号：US13851603

    申请日：2013-03-27

    申请人： Hironori ARAKI ,  Yoshitaka SASAKI ,  Hiroyuki ITO ,  Seiichiro TOMITA ,  Shigeki TANEMURA ,  Kazumasa YASUDA

    发明人： Hironori ARAKI ,  Yoshitaka SASAKI ,  Hiroyuki ITO ,  Seiichiro TOMITA ,  Shigeki TANEMURA ,  Kazumasa YASUDA

    IPC分类号： G02B6/122

    CPC分类号： G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    摘要： In a method of manufacturing a near-field light generator, a structure including a core and a polishing stopper layer disposed on the top surface of the core is formed on a first cladding layer. Next, a cladding material layer is formed to cover the first cladding layer and the structure. The cladding material layer is then polished until the polishing stopper layer is exposed. Next, the polishing stopper layer is removed so that the cladding material layer has a protruding portion protruding upward to a higher level than the top surface of the core. The cladding material layer is then polished so as to remove the protruding portion and thereby make the cladding material layer into a second cladding layer. Then, a third cladding layer and a plasmon generator are formed.

    摘要翻译： 在制造近场光发生器的方法中，在第一包层上形成包括设置在芯的顶表面上的芯和抛光阻挡层的结构。 接下来，形成包层材料层以覆盖第一包层和结构。 然后抛光包层材料层直到抛光停止层露出。 接下来，去除抛光停止层，使得包层材料层具有向上突出到比芯的顶表面更高的水平的突出部分。 然后对覆层材料层进行研磨以除去突出部分，从而使包层材料层成为第二覆层。 然后，形成第三包覆层和等离子体发生器。

    MULTILAYER PLASMON GENERATOR
    33.
    发明申请
    MULTILAYER PLASMON GENERATOR 有权
    多层等离子发生器

    公开(公告)号：US20140269237A1

    公开(公告)日：2014-09-18

    申请号：US13846278

    申请日：2013-03-18

    申请人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Seiichiro TOMITA ,  Ryuji FUJII

    发明人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Seiichiro TOMITA ,  Ryuji FUJII

    IPC分类号： G11B13/04 ,  B23K10/00

    CPC分类号： B23K10/00 ,  G02B6/1226 ,  G11B5/3133 ,  G11B5/314 ,  G11B5/6088 ,  G11B2005/0021

    摘要： A plasmon generator has a front end face, a first metal layer, a second metal layer, and an intermediate layer. The front end face generates near-field light based on a surface plasmon. The intermediate layer is interposed between the first metal layer and the second metal layer. Each of the first metal layer, the second metal layer and the intermediate layer has an end located in the front end face. Each of the first and second metal layers is formed of a metal material. The intermediate layer is formed of a material higher in Vickers hardness than the metal material used to form the first metal layer and the metal material used to form the second metal layer.

    摘要翻译： 等离子体发生器具有前端面，第一金属层，第二金属层和中间层。 前端面基于表面等离子体激发产生近场光。 中间层介于第一金属层和第二金属层之间。 第一金属层，第二金属层和中间层中的每一个具有位于前端面中的端部。 第一和第二金属层中的每一个由金属材料形成。 中间层由维氏硬度比用于形成第一金属层的金属材料和用于形成第二金属层的金属材料的材料形成。

    NEAR-FIELD LIGHT GENERATOR AND THERMALLY-ASSISTED MAGNETIC RECORDING HEAD
    34.
    发明申请
    NEAR-FIELD LIGHT GENERATOR AND THERMALLY-ASSISTED MAGNETIC RECORDING HEAD 有权
    近场光发生器和热辅助磁记录头

    公开(公告)号：US20140269232A1

    公开(公告)日：2014-09-18

    申请号：US13846337

    申请日：2013-03-18

    申请人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Seiichiro TOMITA ,  Ryuji FUJII

    发明人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Hironori ARAKI ,  Seiichiro TOMITA ,  Ryuji FUJII

    IPC分类号： G11B13/08 ,  G02B27/56 ,  G02B5/00

    CPC分类号： G02B5/008 ,  G11B5/314 ,  G11B2005/0021

    摘要： A near-field light generator includes a multilayer structure having a front end face. The multilayer structure includes a first dielectric layer, a second dielectric layer, a third dielectric layer, a first metal layer, and a second metal layer. The first metal layer is interposed between the first dielectric layer and the second dielectric layer. The second metal layer is interposed between the second dielectric layer and the third dielectric layer. Each of the first to third dielectric layers and the first and second metal layers has an end located in the front end face. The dielectric material used to form the first dielectric layer, the dielectric material used to form the second dielectric layer, and the dielectric material used to form the third dielectric layer have the same permittivity.

    摘要翻译： 近场光发生器包括具有前端面的多层结构。 多层结构包括第一介电层，第二介电层，第三介电层，第一金属层和第二金属层。 第一金属层介于第一介电层和第二电介质层之间。 第二金属层介于第二电介质层和第三电介质层之间。 第一至第三电介质层和第一和第二金属层中的每一个具有位于前端面中的端部。 用于形成第一电介质层的电介质材料，用于形成第二电介质层的电介质材料以及用于形成第三电介质层的电介质材料具有相同的介电常数。

    TAPER-ETCHING METHOD AND METHOD OF MANUFACTURING NEAR-FIELD LIGHT GENERATOR
    36.
    发明申请
    TAPER-ETCHING METHOD AND METHOD OF MANUFACTURING NEAR-FIELD LIGHT GENERATOR 有权
    切割蚀刻方法和制造近场光发生器的方法

    公开(公告)号：US20140175053A1

    公开(公告)日：2014-06-26

    申请号：US14189574

    申请日：2014-02-25

    申请人： Hironori ARAKI ,  Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA

    发明人： Hironori ARAKI ,  Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA

    IPC分类号： G11B5/31

    CPC分类号： G11B5/31 ,  B44C1/22 ,  G02B6/1226 ,  G11B5/3163 ,  G11B7/22 ,  G11B2005/0021

    摘要： A method of taper-etching a layer to be etched that is made of a dielectric material and has a top surface. The method includes the steps of: forming an etching mask with an opening on the top surface of the layer to be etched; and taper-etching a portion of the layer to be etched, the portion being exposed from the opening, by reactive ion etching so that a groove having two wall faces intersecting at a predetermined angle is formed in the layer to be etched. The step of taper-etching employs an etching gas containing a first gas contributing to the etching of the layer to be etched and a second gas contributing to the deposition of a sidewall protective film, and changes, during the step, the ratio of the flow rate of the second gas to the flow rate of the first gas so that the ratio increases.

    摘要翻译： 对由电介质材料制成并具有顶表面的被蚀刻层进行锥形蚀刻的方法。 该方法包括以下步骤：在待蚀刻层的顶表面上形成具有开口的蚀刻掩模; 并且通过反应离子蚀刻使待蚀刻的层的一部分从开口暴露出来，使得在待蚀刻的层中形成具有与预定角度相交的两个壁面的凹槽。 锥蚀刻的步骤使用包含有助于蚀刻被蚀刻层的第一气体的蚀刻气体和有助于沉积侧壁保护膜的第二气体，并且在该步骤期间改变流动比 第二气体与第一气体的流量的比率使得该比率增加。

    THIN-FILM MAGNETIC HEAD, METHOD OF MANUFACTURING THE SAME, HEAD GIMBAL ASSEMBLY, AND HARD DISK DRIVE
    37.
    发明申请
    THIN-FILM MAGNETIC HEAD, METHOD OF MANUFACTURING THE SAME, HEAD GIMBAL ASSEMBLY, AND HARD DISK DRIVE 有权
    薄膜磁头，其制造方法，头部组件和硬盘驱动

    公开(公告)号：US20120262825A1

    公开(公告)日：2012-10-18

    申请号：US13088852

    申请日：2011-04-18

    申请人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

    发明人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

    IPC分类号： G11B5/17 ,  G11B5/127 ,  G11B5/48

    CPC分类号： G11B5/1278 ,  G11B5/3146 ,  G11B5/3163 ,  G11B5/3967 ,  Y10T29/49032

    摘要： A thin-film magnetic head is constructed such that a main magnetic pole layer, a write shield layer, a gap layer, and a thin-film coil are laminated on a substrate. The write shield layer has an opposing shield part opposing the main magnetic pole layer and a front shield part. The front shield part is connected to the opposing shield part without straddling the thin-film coil. Besides, the front shield part has a shield front end face disposed in the medium-opposing surface and a shield upper end face formed distanced from the medium-opposing surface. Further, the front shield part has a shield connecting part. The shield front end face is connected to the shield upper end face by the shield connecting part.

    摘要翻译： 薄膜磁头被构造为使得主磁极层，写入屏蔽层，间隙层和薄膜线圈层叠在基板上。 写屏蔽层具有与主磁极层相对的相对的屏蔽部分和前屏蔽部分。 前屏蔽部分连接到相对的屏蔽部分而不跨越薄膜线圈。 此外，前屏蔽部分具有设置在介质相对表面中的屏蔽前端面和远离介质相对表面形成的屏蔽上端面。 此外，前屏蔽部具有屏蔽连接部。 屏蔽前端面通过屏蔽连接部与屏蔽上端面连接。

    THIN-FILM MAGNETIC HEAD, METHOD OF MANUFACTURING THE SAME, HEAD GIMBAL ASSEMBLY, AND HARD DISK DRIVE
    40.
    发明申请
    THIN-FILM MAGNETIC HEAD, METHOD OF MANUFACTURING THE SAME, HEAD GIMBAL ASSEMBLY, AND HARD DISK DRIVE 有权
    薄膜磁头，其制造方法，头部组件和硬盘驱动

    公开(公告)号：US20120282492A1

    公开(公告)日：2012-11-08

    申请号：US13099729

    申请日：2011-05-03

    申请人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

    发明人： Yoshitaka SASAKI ,  Hiroyuki ITO ,  Shigeki TANEMURA ,  Kazuki SATO ,  Atsushi IIJIMA

    IPC分类号： G11B5/33 ,  G11B5/127

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  Y10T29/49032 ,  Y10T428/1186

    摘要： A thin-film magnetic head is constructed such that a main magnetic pole layer, a write shield layer, a gap layer, and a thin-film coil are laminated on a substrate. The thin-film magnetic head includes a return magnetic pole layer and a connecting magnetic layer. The return magnetic pole layer is formed at a position distanced from the medium-opposing surface on the side opposite to the write shield layer with the main magnetic pole layer intervening therebetween. The connecting magnetic layer is formed using a magnetic material so as to connect the return magnetic pole layer to the write shield layer on the side closer to the medium-opposing surface than is the thin-film coil. The thin-film coil is wound as a flat spiral around the write shield layer. A part of the thin-film coil wound as the flat spiral is disposed only at a position distanced from the substrate than is the main magnetic pole layer.

    摘要翻译： 薄膜磁头被构造为使得主磁极层，写入屏蔽层，间隙层和薄膜线圈层叠在基板上。 薄膜磁头包括返回磁极层和连接磁性层。 返回磁极层形成在与写入屏蔽层相反一侧的介质相对表面之间的位置处，主磁极层介于它们之间。 连接磁性层使用磁性材料形成，以使返回磁极层与薄膜线圈相比更靠近介质相对表面的一侧将写入屏蔽层连接。 薄膜线圈围绕写入屏蔽层缠绕成平坦的螺旋线。 作为扁平螺旋卷绕的薄膜线圈的一部分仅设置在与主磁极层相比离开基板的位置。