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    CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element
    31.
    发明授权
    CPP giant magnetoresistive head having antiferromagnetic film disposed in rear of element 有权
    CPP巨磁阻头具有设置在元件后部的反铁磁膜

    公开(公告)号：US07220499B2

    公开(公告)日：2007-05-22

    申请号：US10823484

    申请日：2004-04-13

    申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

    发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

    IPC分类号： G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

    摘要： A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

    摘要翻译： CPP巨磁阻头包括其间具有预定距离的下屏蔽层和上屏蔽层，以及包括固定和自由磁性层的巨磁阻元件（GMR），其设置在上屏蔽层和下屏蔽层之间，其中非磁性层插入在固定和自由磁性层之间 层。 A电流垂直于GMR的膜平面流动。 磁阻头还包括设置在GMR后部的反铁磁层（Ni-O或α-Fe 2 O 3 3 3的绝缘AF），其高度方向为 与在高度方向上延伸的被钉扎磁性层的后部的上表面或下表面接触，并且在与上表面或下表面的界面处产生交换耦合磁场，使得固定的磁化方向 磁性层被高度方向的交换耦合磁场固定。

    Current sensor
    34.
    发明授权
    Current sensor 有权
    电流传感器

    公开(公告)号：US08487612B2

    公开(公告)日：2013-07-16

    申请号：US13038312

    申请日：2011-03-01

    申请人： Kenji Ichinohe ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide

    发明人： Kenji Ichinohe ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide

    IPC分类号： G01R33/09

    CPC分类号： G01R33/09 ,  G01R15/205 ,  G01R19/0092

    摘要： A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point.

    摘要翻译： 一种电流传感器，包括磁检测桥电路，其由具有通过施加来自待测电流的感应磁场而变化的电阻值的四个磁阻效应元件构成，并且具有两个磁阻效应元件之间的输出 。 四个磁阻效应元件具有相同的电阻变化率，并且包括通过其间的反平行耦合膜将第一铁磁膜和第二铁磁膜反铁磁耦合形成的自固定型铁磁性固定层，非磁性 中间层和软磁性层。 提供输出的两个磁阻效应元件的铁磁固定层的磁化方向彼此相差180°。 磁检测桥电路具有与电源点对称的布线。

    Magnetic detection head and method for manufacturing the same
    38.
    发明授权
    Magnetic detection head and method for manufacturing the same 有权
    磁性检测头及其制造方法

    公开(公告)号：US07738218B2

    公开(公告)日：2010-06-15

    申请号：US11436270

    申请日：2006-05-17

    申请人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    发明人： Yosuke Ide ,  Masamichi Saito ,  Masahiko Ishizone ,  Naoya Hasegawa

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3906 ,  B82Y40/00 ,  G01R33/093 ,  H01F10/3263 ,  H01F10/3281 ,  H01F41/302 ,  H01L43/10

    摘要： A magnetic detection element capable of maintaining the ΔRA at a high level and reducing the magnetostriction by improving a material for a free magnetic layer, as well as a method for manufacturing the same, is provided. The free magnetic layer includes a laminate composed of a CoMnX alloy layer formed from a metal compound represented by a compositional formula CoaMnbXc (where X represents at least one of Ge, Ga, In, Si, Pb, Zn, and Sb and a+b+c=100 atomic percent) and a CoMnZ alloy layer formed from a metal compound represented by a compositional formula CodMneZf (where Z represents at least one of Sn and Al and d+e+f=100 atomic percent). In this manner, the magnetostriction of the free magnetic layer can be reduced.

    摘要翻译： 提供了能够通过改善自由磁性层的材料而将高分辨率RA维持并减小磁致伸缩的磁性检测元件及其制造方法。 自由磁性层包括由由组成式CoaMnbXc表示的金属化合物形成的CoMnX合金层（其中X表示Ge，Ga，In，Si，Pb，Zn和Sb中至少一种）和a + b + c = 100原子％）和由组成式CodMneZf（Z表示Sn和Al中的至少一种，d + e + f = 100原子％）表示的金属化合物形成的CoMnZ合金层。 以这种方式，可以减小自由磁性层的磁致伸缩。