Ester compound, polymer, resist composition, and patterning process
    32.
    发明授权
    Ester compound, polymer, resist composition, and patterning process 有权
    酯化合物,聚合物,抗蚀剂组合物和图案化工艺

    公开(公告)号:US07666967B2

    公开(公告)日:2010-02-23

    申请号:US11606069

    申请日:2006-11-30

    IPC分类号: C08F214/18

    摘要: A polymer comprising recurring units (2) obtained through polymerization of an ester compound of formula (1) is used to form a resist composition. R1 is F or C1-C6 fluoroalkyl, R2 is H or C1-C8 alkyl, R3 is O or C1-C6 alkylene, R4 and R5 each are H or C1-C10 alkyl or fluoroalkyl, and R6 is H or an acid labile group. The resist composition, when processed by ArF lithography, has advantages including improved resolution, transparency, minimal line edge roughness, and etch resistance. The resist composition exhibits better performance when processed by ArF immersion lithography with liquid interposed between a projection lens and a wafer.

    摘要翻译: 使用包含通过聚合式(1)的酯化合物获得的重复单元(2)的聚合物来形成抗蚀剂组合物。 R 1是F或C 1 -C 6氟代烷基,R 2是H或C 1 -C 8烷基,R 3是O或C 1 -C 6亚烷基,R 4和R 5各自是H或C 1 -C 10烷基或氟代烷基,R 6是H或酸不稳定基团 。 当通过ArF光刻处理时,抗蚀剂组合物具有改进的分辨率,透明度,最小的线边缘粗糙度和耐蚀刻性的优点。 当通过ArF浸没式光刻法处理介于投影透镜和晶片之间的液体时,抗蚀剂组合物表现出更好的性能。

    Polymer compound, resist material and pattern formation method
    39.
    发明申请
    Polymer compound, resist material and pattern formation method 失效
    高分子化合物,抗蚀剂材料和图案形成方法

    公开(公告)号:US20050074693A1

    公开(公告)日:2005-04-07

    申请号:US10954373

    申请日:2004-10-01

    摘要: The base polymer of a resist material contains a polymer compound including a first unit represented by a general formula of the following Chemical Formula 5 and a second unit represented by a general formula of the following Chemical Formula 6: wherein R1, R2, R3, R7, R8 and R9 are the same or different and are a hydrogen atom, a fluorine atom, or a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20; R4 is a straight-chain alkylene group or a branched or cyclic alkylene group with a carbon number not less than 0 and not more than 20; R5, R6 and R11 are the same or different and are a hydrogen atom, a straight-chain alkyl group, a branched or cyclic alkyl group or a fluoridated alkyl group with a carbon number not less than 1 and not more than 20, or a protecting group released by an acid; R12 is a fluorine atom, or a straight-chain fluoridated alkyl group or a branched or cyclic fluoridated alkyl group with a carbon number not less than 1 and not more than 20; 0

    摘要翻译: 抗蚀剂材料的基础聚合物含有包含由以下化学式5的通式表示的第一单元和由以下化学式6的通式表示的第二单元的聚合物化合物:其中R 1, R 2,R 3,R 7,R 8和R 9相同或不同,为氢原子,氟原子或直链烷基,支链或环状烷基 基团或碳数不小于1且不大于20的氟化烷基; R 4是直链亚烷基或碳数不小于0且不大于20的支链或环状亚烷基; R 5,R 6和R 11相同或不同,为氢原子,直链烷基,支链或环状烷基或碳数不少于的氟化烷基 1,不大于20,或被酸释放的保护基; R 12为碳原子数为1以上且20以下的氟原子或直链氟化烷基或支链或环状氟化烷基, 0

    Pattern forming material and method of pattern formation
    40.
    发明授权
    Pattern forming material and method of pattern formation 有权
    图案形成材料和图案形成方法

    公开(公告)号:US06830869B2

    公开(公告)日:2004-12-14

    申请号:US10415434

    申请日:2003-04-29

    IPC分类号: G03F7004

    摘要: A pattern formation material of this invention contains a base polymer including a first unit represented by Chemical Formula 1 and a second unit represented by Chemical Formula 2 and, and an acid generator: wherein R1 and R3 are the same or different and are a hydrogen atom, a chlorine atom, a fluorine atom, an alkyl group or an alkyl group including a fluorine atom; R2 is an atom or a group that is not released by an acid and is selected from the group consisting of a hydrogen atom, an alkyl group, a cyclic aliphatic group, an aromatic group, a heterocycle, an ester group and an ether group; R4 is a protecting group released by an acid; m is an integer of 0 through 5; and a and b satisfy 0

    摘要翻译: 本发明的图案形成材料含有包含由化学式1表示的第一单元和由化学式2表示的第二单元的基础聚合物和酸产生剂:其中R1和R3相同或不同,为氢原子 氯原子,氟原子,烷基或含有氟原子的烷基; R2是不被酸释放并选自氢原子,烷基,环脂族基,芳基,杂环,酯基和醚基的原子或基团; R4是由酸释放的保护基; m为0〜5的整数。 a和b满足0