-
31.发明授权Method and apparatus for identifying a manufacturing problem area in a layout using a gradient-magnitude of a process-sensitivity model 失效使用过程敏感度模型的梯度大小来识别布局中的制造问题区域的方法和装置公开(公告)号：US07243332B2
公开(公告)日：2007-07-10
申请号：US11083656
申请日：2005-03-17
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70433 , G03F7/705 , G06F2217/12 , Y02P90/265
摘要： One embodiment of the present invention provides a system that identifies an area in a mask layout which is likely to cause manufacturing problems. During operation, the system creates an on-target process model that models a semiconductor manufacturing process under nominal process conditions. The system also creates one or more off-target process models that model the semiconductor manufacturing process under one or more arbitrary process conditions. Next, the system computes a process-sensitivity model using the on-target process model and the off-target process models. The system then computes a gradient-magnitude of the process-sensitivity model. Next, the system identifies a problem area in the mask layout using the gradient-magnitude of the process-sensitivity model. Identifying the problem area allows it to be corrected, which improves the manufacturability of the mask layout.
摘要翻译： 本发明的一个实施例提供一种识别掩模布局中可能导致制造问题的区域的系统。 在运行期间，系统创建一个目标过程模型，在标称工艺条件下对半导体制造工艺进行建模。 该系统还创建一个或多个非目标工艺模型，其在一个或多个任意工艺条件下对半导体制造工艺进行建模。 接下来，系统使用目标过程模型和离靶过程模型来计算过程敏感度模型。 系统然后计算过程敏感性模型的梯度大小。 接下来，系统使用过程敏感度模型的梯度大小来识别掩模布局中的问题区域。 识别问题区域可以对其进行修正，从而提高了掩模布局的可制造性。
-
32.发明授权公开(公告)号：US08473271B2
公开(公告)日：2013-06-25
申请号：US12723515
申请日：2010-03-12
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F7/70666
摘要： A lithography model uses a transfer function to map exposure energy dose to the thickness of remaining photoresist after development; while allowing the flexibility to account for other physical processes. In one approach, the model is generated by fitting empirical data. The model may be used in conjunction with an aerial image to obtain a three-dimensional profile of the remaining photoresist thickness after the development process. The lithography model is generally compact, yet capable of taking into account various physical processes associated with the photoresist exposure and/or development process for more accurate simulation.
摘要翻译： 光刻模型使用传递函数将暴露能量剂量映射到显影后剩余光致抗蚀剂的厚度; 同时允许灵活性来解释其他物理过程。 在一种方法中，通过拟合经验数据生成模型。 该模型可以与空间图像结合使用，以在显影处理之后获得剩余光致抗蚀剂厚度的三维轮廓。 光刻模型通常是紧凑的，但是能够考虑到与光致抗蚀剂曝光和/或显影过程相关的各种物理过程以用于更准确的模拟。
-
33.发明授权Method and system for correlating physical model representation to pattern layout 有权将物理模型表示与模式布局相关联的方法和系统公开(公告)号：US07933471B2
公开(公告)日：2011-04-26
申请号：US11716511
申请日：2007-03-09
CPC分类号： G02B27/0012 , G03F1/36
摘要： One embodiment of the present invention provides a system that reduces computational complexity in simulating an image resulting from an original mask and an optical transmission system. During operation, the system obtains a set transmission cross coefficient (TCC) kernel functions based on the optical transmission system, and obtains a set of transmission functions for a representative pattern which contains features representative of the original mask. The system constructs a new set of kernel functions based on the TCC kernel functions and the transmission functions for the representative pattern, wherein responses to the new kernel functions in a resulting image corresponding to the representative pattern are substantially uncorrelated with one another. The system further produces an intensity distribution of a resulting image corresponding to the original mask based on the new kernel functions, thereby facilitating prediction of a layout that can be produced from the original mask.
摘要翻译： 本发明的一个实施例提供一种降低模拟由原始掩模和光传输系统产生的图像的计算复杂性的系统。 在运行过程中，系统基于光传输系统获得设置的传输交叉系数（TCC）核函数，并获得一组代表性模式的传输函数，其中代表性模式包含代表原始掩码的特征。 该系统基于TCC内核功能和代表性模式的传输功能构建新的一组内核函数，其中对应于代表性模式的所得图像中对新内核功能的响应基本上彼此不相关。 该系统进一步基于新的内核函数产生对应于原始掩码的结果图像的强度分布，从而有助于预测可以从原始掩模产生的布局。
-
公开(公告)号：US07853919B2
公开(公告)日：2010-12-14
申请号：US12708348
申请日：2010-02-18
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then determine a set of mask layers, wherein at least some of the mask layers correspond to the MCR components. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以确定一组掩模层，其中至少一些掩模层对应于MCR部件。 接下来，系统可以通过使用掩模层集合和过程数据校准未校准的过程模型来确定改进的过程模型。
-
35.发明授权Method and apparatus for identifying a manufacturing problem area in a layout using a gradient-magnitude of a process-sensitivity model 有权使用过程敏感度模型的梯度大小来识别布局中的制造问题区域的方法和装置公开(公告)号：US07784018B2
公开(公告)日：2010-08-24
申请号：US11801350
申请日：2007-05-08
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G03F1/36 , G03F7/70433 , G03F7/705 , G06F2217/12 , Y02P90/265
摘要： One embodiment of the present invention provides a system that identifies an area in a mask layout which is likely to cause manufacturing problems. During operation, the system creates an on-target process model that models a semiconductor manufacturing process under nominal (e.g., optimal) process conditions. The system also creates one or more off-target process models that model the semiconductor manufacturing process under one or more arbitrary (e.g., non-optimal) process conditions. Next, the system computes a process-sensitivity model using the on-target process model and the off-target process models. The system then computes a gradient-magnitude of the process-sensitivity model. Next, the system identifies a problem area in the mask layout using the gradient-magnitude of the process-sensitivity model. Note that identifying the problem area allows it to be corrected, which improves the manufacturability of the mask layout. Moreover, using the gradient-magnitude of the process-sensitivity model to identify the problem area reduces the computational time required to identify the problem area.
摘要翻译： 本发明的一个实施例提供一种识别掩模布局中可能导致制造问题的区域的系统。 在运行期间，系统创建了一个目标过程模型，在标称（例如，最佳）工艺条件下对半导体制造工艺进行建模。 该系统还创建一个或多个非目标过程模型，其在一个或多个任意（例如，非最优））工艺条件下对半导体制造过程进行建模。 接下来，系统使用目标过程模型和离靶过程模型来计算过程敏感度模型。 系统然后计算过程敏感性模型的梯度大小。 接下来，系统使用过程敏感度模型的梯度大小来识别掩模布局中的问题区域。 请注意，识别问题区域可以对其进行更正，从而提高了掩模布局的可制造性。 此外，使用过程敏感度模型的梯度大小来识别问题区域减少了识别问题区域所需的计算时间。
-
36.发明授权公开(公告)号：US07739651B2
公开(公告)日：2010-06-15
申请号：US11712805
申请日：2007-02-28
摘要： One embodiment provides a method to determine if a pattern is robustly manufacturable. During operation, the system may receive a first pattern and a design intent, wherein the first pattern is intended to generate the design intent. Next, the system may determine a second pattern using the design intent, wherein subjecting the second pattern to a second manufacturing process is expected to generate a third pattern that is substantially similar to the design intent. The system may then determine if a first semiconductor manufacturing process is capable of robustly manufacturing the second pattern. If the second pattern is not robustly manufacturable, the system may generate an indicator that indicates that the first pattern is not robustly manufacturable.
摘要翻译： 一个实施例提供了一种确定图案是否可靠地制造的方法。 在操作期间，系统可以接收第一模式和设计意图，其中第一模式旨在产生设计意图。 接下来，系统可以使用设计意图来确定第二图案，其中预期第二图案经受第二制造过程将产生基本上类似于设计意图的第三图案。 然后，系统可以确定第一半导体制造工艺是否能够鲁棒地制造第二图案。 如果第二模式不可靠地制造，则系统可以产生指示第一模式不可靠地制造的指示器。
-
37.发明授权Method and apparatus for determining a process model using a 2-D-pattern detecting kernel 有权用于使用2-D图案检测内核确定过程模型的方法和装置公开(公告)号：US07739645B2
公开(公告)日：2010-06-15
申请号：US11800171
申请日：2007-05-04
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F2217/10
摘要： One embodiment provides a system for determining an improved process model that models one or more semiconductor manufacturing processes. During operation, the system can receive a first process model. Next, the system can receive a 2-D-pattern detecting kernel which can detect 2-D patterns. The system can then receive a second set of empirical data which is associated with 2-D patterns in a test layout. Next, the system can determine an improved process model using the first process model, the 2-D-pattern detecting kernel, the test layout, and the second set of empirical data.
摘要翻译： 一个实施例提供了一种用于确定对一个或多个半导体制造工艺进行建模的改进的工艺模型的系统。 在运行过程中，系统可以接收第一个流程模型。 接下来，系统可以接收可以检测2-D图案的2-D图案检测内核。 然后，系统可以接收与测试布局中的2-D模式相关联的第二组经验数据。 接下来，系统可以使用第一过程模型，2-D模式检测内核，测试布局和第二组经验数据来确定改进的过程模型。
-
38.发明授权Facilitating process model accuracy by modeling mask corner rounding effects 有权通过模拟掩码角舍入效应来促进过程模型的准确性公开(公告)号：US07707539B2
公开(公告)日：2010-04-27
申请号：US11863624
申请日：2007-09-28
IPC分类号： G06F17/50
CPC分类号： G03F7/70675 , G03F1/36 , G03F7/70441 , G03F7/705
摘要： An embodiment provides systems and techniques for determining an improved process model which models mask corner rounding (MCR) effects. During operation, the system may receive a mask layout and process data which was generated by applying a photolithography process to the mask layout. The system may also receive an uncalibrated process model which may contain a set of MCR components. Next, the system may identify a set of corners in the mask layout. The system may then modify the mask layout in proximity to the set of corners to obtain a modified mask layout. Alternatively, the system may determine a set of mask layers. Next, the system may determine an improved process model by calibrating the uncalibrated process model using the modified mask layout and/or the set of mask layers, and the process data.
摘要翻译： 一个实施例提供了用于确定改进的过程模型的系统和技术，该模型模拟了掩模拐角舍入（MCR）效应。 在操作期间，系统可以接收通过将光刻工艺应用于掩模布局而产生的掩模布局和处理数据。 系统还可以接收未校准的过程模型，其可以包含一组MCR组件。 接下来，系统可以识别掩模布局中的一组角。 然后，系统可以在靠近该组角修改掩模布局以获得修改的掩模布局。 或者，系统可以确定一组掩模层。 接下来，系统可以通过使用修改的掩模布局和/或掩模层集合以及过程数据校准未校准的过程模型来确定改进的过程模型。
-
39.发明申请METHOD AND APPARATUS FOR USING A SYNCHROTRON AS A SOURCE IN EXTREME ULTRAVIOLET LITHOGRAPHY 有权在超极紫外光谱中使用同源物作为源的方法和装置公开(公告)号：US20100092880A1
公开(公告)日：2010-04-15
申请号：US12251198
申请日：2008-10-14
CPC分类号： G03B27/42 , G03F7/70008 , G03F7/70425 , G03F7/70558
摘要： One embodiment of the present invention provides a method to facilitate using a synchrotron as a source in an extreme ultraviolet lithography (EUVL) system, wherein the synchrotron's energy decreases over time. The EUVL system can includes a stepper which uses a step-and-repeat process or a step-and-scan process to transfer patterns from a reticle onto a wafer. The wafer is desired to be exposed to a substantially constant dose. During operation, the system can measure a synchrotron current, and adjust the stepper's exposure duration or the stepper's scan speed based on the synchrotron current so that the wafer is exposed to the substantially constant dose. Note that using the synchrotron current to control the stepper can enable the EUVL system to expose the wafer to the substantially constant dose without using additional equipment to monitor the source's energy.
摘要翻译： 本发明的一个实施方案提供了一种促进在极紫外光刻（EUVL）系统中使用同步加速器作为源的方法，其中同步加速器的能量随时间而减小。 EUVL系统可以包括步进器，其使用步进重复过程或步进和扫描过程将图案从掩模版传送到晶片上。 期望晶片暴露于基本恒定的剂量。 在操作期间，系统可以测量同步加速器电流，并且基于同步加速器电流来调节步进器的曝光持续时间或步进器的扫描速度，使得晶片暴露于基本恒定的剂量。 请注意，使用同步加速器电流来控制步进器可以使EUVL系统能够将晶片暴露于基本恒定的剂量，而不需要额外的设备来监测电源的能量。
-
40.发明授权Method and apparatus for modifying a layout to improve manufacturing robustness 有权用于修改布局以提高制造稳健性的方法和装置公开(公告)号：US07509624B2
公开(公告)日：2009-03-24
申请号：US11439816
申请日：2006-05-24
IPC分类号： G06F17/50
CPC分类号： G03F7/70433 , G03F1/36 , G03F7/705 , Y10T428/131
摘要： One embodiment of the present invention provides a system that modifies a layout to improve manufacturing robustness. During operation, the system receives a layout. The system then selects a segment in the layout. Next, the system determines a target location in the proximity of the segment where the value of a process-sensitivity model is within a desired range of values. The system then modifies the layout so that the segment is located at the target location. The layout modification can cause the pattern which is associated with the segment to exhibit isofocal behavior, which can improve manufacturing robustness.
摘要翻译： 本发明的一个实施例提供一种修改布局以提高制造稳健性的系统。 在操作期间，系统接收布局。 然后系统在布局中选择一个段。 接下来，系统确定在区段附近的目标位置，其中过程敏感性模型的值在期望的值范围内。 然后，该系统修改布局，使得该段位于目标位置。 布局修改可以导致与段相关联的模式表现出非对等的行为，这可以提高制造的鲁棒性。
-
-
-
-
-
-
-
-
-
搜索结果
44 条记录 (耗时 0.031 秒)
