Abstract:
In an integrated circuit, a metal-insulator-metal (MIM) diode includes: a first metallization structure level having a first metal layer; a first dielectric layer over the first metal layer; a metal contact or via on the first metal layer and extending through a portion of the first dielectric layer; and a second metallization structure level having a second metal layer; and a second dielectric layer over the second metal layer. The diode has a first electrode on the metal contact or via, a multilayer dielectric structure on the first electrode, and a second electrode between the multilayer dielectric structure and the second metal layer.
Abstract:
The disclosure provides a current steering digital to analog converter (DAC) that includes a plurality of DAC elements. At least one DAC element of the plurality of DAC elements is coupled to a calibration circuit. The calibration circuit includes a fixed current source coupled to a primary node of the DAC element through a first estimation switch. A digital code generator is coupled to the primary node, and generates a first digital code corresponding to a primary voltage generated at the primary node. The digital code generator generates a second digital code. A correction DAC is coupled to the digital code generator and generates a bias voltage based on the second digital code. The bias voltage is provided to the DAC element such that a current flowing through each DAC element of the plurality of DAC elements is equal.
Abstract:
An output stage for an amplifier is provided. The amplifier generally provides for compensation of an error current generated by the base-collector (or gate-drain) capacitance of a common base (or gate) amplifier transistor. The stage accomplishes this by utilizing a three transistor Wilson current mirror to combine the error current with a mirrored bias current to reduce the load current on the common base (or gate) amplifier transistor.
Abstract:
Multiple blanket implantations of one or more p type dopants into a semiconductor substrate are performed to facilitate isolation between nwell regions subsequently formed in the substrate. The blanket implantations are performed through isolation regions in the substrate so that the p type dopants are implanted to depths sufficient to separate the nwell regions. This increased concentration of p type dopants helps to mitigate leakage between the nwell regions as the nwell regions are brought closer together to increase packing densities.
Abstract:
A wireless transmitter (TX1). The transmitter comprises circuitry for providing a plurality of control (CONTROL) bits and circuitry for providing a plurality of user (USER) bits. The transmitter also comprises circuitry for modulating (16) the plurality of control bits and the plurality of user bits into a stream of complex symbols and circuitry (18) for converting the stream of complex symbols into a parallel plurality of complex symbol streams. The transmitter also comprises circuitry (20) for performing an inverse fast Fourier transform on the parallel plurality of complex symbol streams to form a parallel plurality of OFDM symbols and circuitry (22) for converting the parallel plurality of OFDM symbols into a serial stream of OFDM symbols. Each OFDM symbol in the serial stream of OFDM symbols comprises a plurality of data points, and selected (SF2.x) OFDM symbols in the serial stream of OFDM symbols carry modulation information (AMOD). The modulation information in one or more of the selected OFDM symbols comprises a plurality of modulation groups, and the plurality of modulation groups comprises a number of modulation parameters that describe modulation of a corresponding set of data points in a subsequent OFDM symbol in the serial stream of OFDM symbols.