公开(公告)号：US06485779B1

公开(公告)日：2002-11-26

申请号：US09576124

申请日：2000-05-22

Applicant: Akira Kamisawa ,  Hayato Katsuragi ,  Taku Yamate ,  Kiyoto Mori

Inventor： Akira Kamisawa ,  Hayato Katsuragi ,  Taku Yamate ,  Kiyoto Mori

IPC: B05D512

CPC classification number: C23C18/1216 ,  H01L21/31691 ,  Y10T29/42

Abstract: Acetylacetone and an aqueous nitric acid are included in a solution in which organic metal compounds of metals constituting a ferroelectric in an organic solvent thereby forming a ferroelectric film formation solution. The solution is applied to a substrate, followed by drying and baking to obtain a ferroelectric film. As a consequence, even when forming a ferroelectric film such as a PZT or PLZT film containing a II group element in the periodic table, a stable ferroelectric film formation solution which prevents neither crystallization nor gelation and is reduced in a change with time in the viscosity thereof can be obtained. A ferroelectric film which contains a II group element and has excellent ferroelectric properties can be thus produced with ease.

Abstract translation: 在有机溶剂中构成铁电体的金属的有机金属化合物形成铁电体成膜溶液的溶液中包含乙酰丙酮和硝酸水溶液。 将溶液施加到基板上，然后干燥和烘烤以获得铁电体膜。 因此，即使在周期表中形成含有II族元素的PZT或PLZT膜等强电介质膜时，也不会形成既不结晶也不凝胶化的稳定的铁电体成膜溶液，粘度随时间而变化 可以得到。 因此可以容易地制造含有II族元素并且具有优异的铁电性能的铁电体膜。

公开(公告)号：USRE37896E1

公开(公告)日：2002-10-29

申请号：US09456302

申请日：1999-12-08

Applicant: Yoshinori Tomida ,  Hiroyuki Hashimoto

Inventor： Yoshinori Tomida ,  Hiroyuki Hashimoto

IPC: B05D512

CPC classification number: H01J9/027 ,  C23C18/1216 ,  C23C18/1295 ,  H01J1/316 ,  H01J2201/3165

Abstract: In a solution for forming electron-emitting regions of electron-emitting devices, the solution contains a metal carboxylate expressed by the following general formula (I), an organic solvent and/or , and water; (R(COO)k)mM  (I) where k=numeral from 1 to 4 , m=a numeral from 1 to 4, and R=CnX2n+1−k R=CnX2n+2−k where X=a hydrogen or halogen (total number of hydrogen and halogen atoms is 2n+1) , n=an integer from 0 to 30, and M=a metal, wherein the organic solvent is a carboxylic ester having the same carboxylic group as R(COO)k expressed in the general formula (I). In a manufacture method of electron-emitting devices each provided between electrodes with a conductive film including an electron-emitting region, a process of forming the conductive film includes a step of coating and calcining the above solution. An image-forming apparatus is manufactured by using the electron-emitting devices. Variations in sheet resistance values of electron-emitting region-forming thin films and characteristics of the electron-emitting devices are reduced.

公开(公告)号：US06468583B1

公开(公告)日：2002-10-22

申请号：US09688825

申请日：2000-10-17

Applicant: Peter Jackson ,  Marcus P. Heydrich

Inventor： Peter Jackson ,  Marcus P. Heydrich

IPC: B05D512

CPC classification number: H01B3/441 ,  H01B7/28 ,  Y02A30/14 ,  Y10T428/31663

Abstract: A tracking resistant electrical insulating material or article suitable for medium to high voltage applications comprising a silane-modified polyolefin, and a heat-shrinkable article prepared therefrom. Said material or article is preferably prepared by a process comprising: (a) reacting polyolefin with a silane in the presence of a free-radical initiator to form a silane-grafted polyolefin, or copolymerising a polyolefin with silane; (b) preparing a mixture of one or more silane-modified polyolefins prepared in (a) with optionally one or more non silane-modified polyolefins, antitrack ingredients, and a silanol condensation catalyst; (c) forming the insulating material or article by melt extruding or moulding said mixture; and (d) crosslinking the insulating material or article by exposing it to moisture, preferably at elevated temperature. The silane-modified, moisture-crosslinkable polyolefin provides the insulating material with high resistance to tracking even in the absence of conventional anti-tracking fillers.

Abstract translation: 适用于中高电压应用的耐追踪电绝缘材料或制品，包括硅烷改性聚烯烃和由其制备的热收缩制品。 所述材料或制品优选通过以下方法制备，所述方法包括：（a）在自由基引发剂存在下使聚烯烃与硅烷反应以形成硅烷接枝的聚烯烃，或使聚烯烃与硅烷共聚; （b）制备一种或多种在（a）中制备的硅烷改性聚烯烃与任选的一种或多种非硅烷改性聚烯烃，抗磨成分和硅烷醇缩合催化剂的混合物; （c）通过熔融挤出或模制所述混合物形成绝缘材料或制品; 和（d）通过将绝缘材料或制品暴露于湿气中，优选在升高的温度下使其交联。 硅烷改性的水分交联聚烯烃为绝缘材料提供了高耐追踪性，即使在没有常规的抗追踪填料的情况下也是如此。

公开(公告)号：US06455099B1

公开(公告)日：2002-09-24

申请号：US09763162

申请日：2001-02-16

Applicant: Kouhei Enchi ,  Hiroyuki Yoshida ,  Yoshifumi Kitayama

Inventor： Kouhei Enchi ,  Hiroyuki Yoshida ,  Yoshifumi Kitayama

IPC: B05D512

CPC classification number: H01L24/11 ,  H01L21/56 ,  H01L21/67126 ,  H01L21/6715 ,  H01L2224/13099 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/14

Abstract: A method and a device for applying a sealant to an IC having bumps, which can solve a cobwebbing problem when a dispense nozzle is raised after the sealant has been applied and implement a productivity improvement; specifically, a method and a device for applying a sealant to an IC having bumps, wherein a dispense nozzle (12) is raised in a first stage (E) at a low speed simultaneously with the stop of dispensing until the first stage (E) covers a specified height and then it is raised in a second stage (F) at a high seed. The above design, in which the dispense nozzle (12) is raised in the first stage (E) at a low speed after the application of the sealant (2) and the nozzle (12) is then raised at a high speed and in a short time in the second stage (F), can positively break off the sealant (2) without inducing cobwebbing and enhance productivity.

Abstract translation: 一种用于向具有凸点的IC施加密封剂的方法和装置，其可以解决在施加密封剂之后分配喷嘴升高时的蛛丝网问题，并实现生产率提高; 具体地说，涉及一种向具有凸起的IC施加密封剂的方法和装置，其中分配喷嘴（12）在第一阶段（E）中以低速同时停止分配直到第一阶段（E）升高， 覆盖指定的高度，然后在高种子的第二阶段（F）中升高。 然后，在施加密封剂（2）和喷嘴（12）之后，其中分配喷嘴（12）在第一阶段（E）中以低速升高的设计然后以高速和 在第二阶段（F）的短时间内，可以有效地破坏密封胶（2），而不会产生丝网印刷并提高生产率。

公开(公告)号：US06444256B1

公开(公告)日：2002-09-03

申请号：US09441113

申请日：1999-11-17

Applicant: Ronald G. Musket ,  Thomas E. Felter

Inventor： Ronald G. Musket ,  Thomas E. Felter

IPC: B05D512

CPC classification number: H01L21/76838 ,  H01L21/31155 ,  H01L2221/1094

Abstract: Nanometer-size wires having a cross-sectional dimension of less than 8 nm with controllable lengths and diameters are produced by infiltrating latent nuclear or ion tracks formed in trackable materials with atomic species. The trackable materials and atomic species are essentially insoluble in each other, thus the wires are formed by thermally driven, self-assembly of the atomic species during annealing, or re-crystallization, of the damage in the latent tracks. Unlike conventional ion track lithography, the inventive method does not require etching of the latent tracks.

Abstract translation: 具有可控长度和直径的横截面尺寸小于8nm的纳米尺寸线通过用原子种渗透形成在可跟踪材料中的潜在核或离子轨迹来产生。 可跟踪材料和原子物质基本上彼此不溶，因此在退火或再结晶期间潜在轨迹中的损伤的热驱动，自组装原子物质形成电线。 与传统的离子轨迹光刻不同，本发明的方法不需要蚀刻潜线。

公开(公告)号：US06423367B1

公开(公告)日：2002-07-23

申请号：US09917543

申请日：2001-07-27

Applicant: Robert Steven Clough

Inventor： Robert Steven Clough

IPC: B05D512

Abstract: An electronic circuit device comprises a resin composition including 90 to 100 weight percent of a curable epoxy-modified aromatic vinyl-conjugated diene block copolymer, optionally up to 10 weight percent of an epoxy resin, and an effective amount of an epoxy curative, the weight percent of the copolymer and epoxy resin being based on the weight of the epoxy bearing material exclusive of curative. The resin composition can be used as an electronic adhesive, covercoat, or encapsulant. The electronic circuit device exhibits superior heat and moisture insensitivity, including the absence of voiding and delamination of the cured resin compostion from its substrate under conditions of 85° C. and 85% relative humidity for 168 hours followed by a temperature of 220° C. for 10 to 40 seconds.

公开(公告)号：US06406743B1

公开(公告)日：2002-06-18

申请号：US08891127

申请日：1997-07-10

Applicant: Chwan-Ying Lee ,  Tzuen-Hsi Huang

Inventor： Chwan-Ying Lee ,  Tzuen-Hsi Huang

IPC: B05D512

CPC classification number: H01L21/32053 ,  C23C18/1608 ,  C23C18/1612 ,  C23C18/36 ,  H01L21/288

Abstract: The present invention provides a method of manufacturing a nickel-silicide technology for polysilicon interconnects. Nickel 40 is deposited on polysilicon 30 using a electroless process. Using a rapid thermal anneal process, Ni 40 is transformed to NiSi at about 600° C. without any agglomeration. The method comprises forming a polysilicon layer 30 over a substrate 10. The surface 34 of the polysilicon layer is activated. Nickel 40 is selectively electroless deposited onto the surface of the polysilicon layer forming a Nickel layer over the polysilicon layer. The Ni layer 40 is rapidly thermally annealed forming a Nickel silicide layer 36 over the polysilicon layer 30. The rapid thermal anneal is performed at a temperature of about 600° C. for a time of about 40 sec. The Nickel silicide layer 36 preferably comprises NiSi 36B with a low resistivity.

Abstract translation: 本发明提供一种制造用于多晶硅互连的硅化镍技术的方法。 使用无电镀方法将镍40沉积在多晶硅30上。 使用快速热退火工艺，Ni 40在约600℃下转化为NiSi，没有任何附聚。 该方法包括在衬底10上形成多晶硅层30.多晶硅层的表面34被激活。 镍40选择性地无电沉积在多晶硅层的表面上，在多晶硅层上形成镍层。 Ni层40快速热退火，在多晶硅层30上形成硅化镍层36.快速热退火在约600℃的温度下进行大约40秒的时间。 镍硅化物层36优选地包括具有低电阻率的NiSi 36B。

公开(公告)号：US06403148B1

公开(公告)日：2002-06-11

申请号：US09471190

申请日：1999-12-23

Applicant: Tsutomu Shiratori ,  Tomoyuki Hiroki

Inventor： Tsutomu Shiratori ,  Tomoyuki Hiroki

IPC: B05D512

CPC classification number: G11B11/10582 ,  G11B11/10504 ,  G11B11/10506 ,  G11B11/10508 ,  G11B11/10515 ,  G11B11/10528 ,  G11B11/10543 ,  G11B11/10584 ,  G11B11/10586 ,  G11B11/10593 ,  Y10S428/90 ,  Y10T428/24942

Abstract: A magnetooptical recording medium includes a first magnetic layer, a second magnetic layer whose Curie temperature is lower than that of the first magnetic laye, and a third magnetic layer, comprising a vertically-magnetizing film, whose Curie temperature is higher than that of the second magnetic layer. The first magnetic layer, the second magnetic layer and the third magnetic layer are in a state of exchange coupling with each other at a portion of a vertically-magnetizing film. A domain walls formed in the first magnetic layer moves when the temperature of the medium has been raised to at least the Curie temperature of the second magnetic layer.

Abstract translation: 磁光记录介质包括第一磁性层，居里温度低于第一磁性层的第二磁性层和第三磁性层，第三磁性层包括垂直磁化膜，其居里温度高于第二磁性层的第二磁性层 磁性层。 第一磁性层，第二磁性层和第三磁性层在垂直磁化膜的一部分处于彼此交换的状态。 当介质的温度升至至少第二磁性层的居里温度时，形成在第一磁性层中的畴壁移动。

公开(公告)号：US06399148B1

公开(公告)日：2002-06-04

申请号：US09497756

申请日：2000-02-04

Applicant: Osamu Fukuroi ,  Yoshiro Nakagawa

Inventor： Osamu Fukuroi ,  Yoshiro Nakagawa

IPC: B05D512

Abstract: A lapping control sensor for a MR head includes a multi-layered structure of a metallic layer, an insulation layer, a resister layer and a lead conductor layer, and being provided in parallel with the MR head which has a multi-layered structure of at least a lower shield layer, a shield gap insulation layer, a MR layer and a lead conductor layer is provided. The insulation layer of the lapping control sensor has a thickness larger than that of the shield gap insulation layer of the MR head. The thickness of the insulation layer of the sensor is 0.1 &mgr;m or more.

公开(公告)号：US06391382B2

公开(公告)日：2002-05-21

申请号：US09217832

申请日：1998-12-22

Applicant: Fumitoshi Yamashita

Inventor： Fumitoshi Yamashita

IPC: B05D512

CPC classification number: H01F1/0578

Abstract: Fine powder out of adequate particle size range discharged in a manufacturing process of resin magnet compound comprising step 1 of mixing magnet powder such as neodymium-iron-boron system quenched alloy and an organic solvent solution of a thermal polymerizing resin in wet process, and step 2 of solvent removal-pulverizing-sorting into adequate particle size range is processed again in step 1 and step 2, and resin magnet compound within adequate particle size range is obtained again, and moreover the green matter obtained by strong compression of the resin magnet compound into a desired magnet shape is processed again at step 2 to obtain fine powder, which is processed again at step 1 and step 2, so that resin magnet compound within adequate particle size is obtained again.

Abstract translation: 在树脂磁体化合物的制造过程中排出的足够粒度范围的细粉末包括在湿法中混合诸如钕铁硼系统淬火合金的磁体粉末和热聚合树脂的有机溶剂溶液的步骤1，以及步骤 在步骤1和步骤2中再次处理溶剂去除粉碎分选至适当粒度范围的2个，再次获得足够粒度范围内的树脂磁体化合物，而且通过树脂磁体化合物强烈压缩获得的绿色物质 在步骤2再次处理成期望的磁体形状，以获得在步骤1和步骤2再次处理的细粉末，使得再次获得足够粒径的树脂磁体化合物。