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7 条记录 (耗时 0.011 秒)

    Method of manufacturing lapping control sensor for magnetoresistive effect head
    1.
    发明授权
    Method of manufacturing lapping control sensor for magnetoresistive effect head 有权

    公开(公告)号：US06399148B1

    公开(公告)日：2002-06-04

    申请号：US09497756

    申请日：2000-02-04

    申请人： Osamu Fukuroi ,  Yoshiro Nakagawa

    发明人： Osamu Fukuroi ,  Yoshiro Nakagawa

    IPC分类号： B05D512

    摘要： A lapping control sensor for a MR head includes a multi-layered structure of a metallic layer, an insulation layer, a resister layer and a lead conductor layer, and being provided in parallel with the MR head which has a multi-layered structure of at least a lower shield layer, a shield gap insulation layer, a MR layer and a lead conductor layer is provided. The insulation layer of the lapping control sensor has a thickness larger than that of the shield gap insulation layer of the MR head. The thickness of the insulation layer of the sensor is 0.1 &mgr;m or more.

    Electroplating apparatus
    3.
    发明授权
    Electroplating apparatus 有权
    电镀设备

    公开(公告)号：US06554976B1

    公开(公告)日：2003-04-29

    申请号：US09588680

    申请日：2000-06-06

    申请人： Satoshi Inoue ,  Toyoaki Tanaka ,  Yoshiro Nakagawa

    发明人： Satoshi Inoue ,  Toyoaki Tanaka ,  Yoshiro Nakagawa

    IPC分类号： C25D1700

    CPC分类号： C25D17/10 ,  C25D21/12 ,  Y10S204/07 ,  Y10S205/917 ,  Y10S205/918

    摘要： A method of electroplating an object to be plated attached to a lower portion of a plating bath constituted by draining used plating solution and supplying new plating solution at every plating procedure. The method has a step of supplying additional current so that the object to be plated always has cathode potential, while the object to be plated is being dipped in the plating bath and electroplating is not carried out.

    摘要翻译： 电镀被镀物体的电镀方法，该方法是将电镀液的下部部分电镀，由电镀液排出，并在每次镀敷工序中供给新的电镀液。 该方法具有提供附加电流的步骤，使得待镀覆的对象总是具有阴极电位，同时将被镀物体浸入镀浴中，并且不进行电镀。

    Method for manufacturing a magnetoresistive element with conductive films and magnetic domain films overlapping a central active area
    5.
    发明授权
    Method for manufacturing a magnetoresistive element with conductive films and magnetic domain films overlapping a central active area 失效
    用于制造具有与中心有源区重叠的导电膜和磁畴膜的磁阻元件的方法

    公开(公告)号：US06416636B2

    公开(公告)日：2002-07-09

    申请号：US09481939

    申请日：2000-01-13

    申请人： Kiyosumi Kanazawa ,  Yoshiro Nakagawa

    发明人： Kiyosumi Kanazawa ,  Yoshiro Nakagawa

    IPC分类号： C23C1434

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3113 ,  G11B5/3116 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3967 ,  G11B2005/3996 ,  H01L43/08

    摘要： The present invention is directed to an MR element and a thin film magnetic head that do not cause an increase in the electrical resistance value due to the presence of dead zones. When forming passive areas that include magnetic domain control films and conductive films at the two sides of a central active area through a vacuum film formation method, the magnetic domain control films are formed under film forming conditions that are different from the film forming conditions under which the conductive films are formed to ensure that the degree to which the conductive films overlap the central active area is set larger than the degree to which the magnetic domain control films overlap the central active area.

    摘要翻译： 本发明涉及不会由于存在死区而导致电阻值增加的MR元件和薄膜磁头。 当通过真空成膜法在中心活性区域的两侧形成包括磁畴控制膜和导电膜的无源区域时，在与成膜条件不同的成膜条件下形成磁畴控制膜， 形成导电膜以确保导电膜与中心有源区重叠的程度被设定为大于磁畴控制膜与中心有效区重叠的程度。

    Electroplating method
    6.
    发明授权
    Electroplating method 失效
    电镀法

    公开(公告)号：US6090260A

    公开(公告)日：2000-07-18

    申请号：US48328

    申请日：1998-03-26

    申请人： Satoshi Inoue ,  Toyoaki Tanaka ,  Yoshiro Nakagawa

    发明人： Satoshi Inoue ,  Toyoaki Tanaka ,  Yoshiro Nakagawa

    IPC分类号： C25D5/00 ,  C25D17/10 ,  C25D21/12 ,  C25D5/10

    CPC分类号： C25D17/10 ,  C25D21/12 ,  Y10S204/07 ,  Y10S205/917 ,  Y10S205/918

    摘要： A method of electroplating an object to be plated attached to a lower portion of a plating bath constituted by draining used plating solution and supplying new plating solution at every plating procedure. The method has a step of supplying additional current so that the object to be plated always has cathode potential, while the object to be plated is being dipped in the plating bath and electroplating is not carried out.

    摘要翻译： 电镀被镀物体的电镀方法，该方法是将电镀液的下部部分电镀，由电镀液排出，并在每次镀敷工序中供给新的电镀液。 该方法具有提供附加电流的步骤，使得待镀覆的对象总是具有阴极电位，同时将被镀物体浸入镀浴中，并且不进行电镀。

    Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area
    7.
    发明授权
    Magnetoresistive element with conductive films and magnetic domain films overlapping a central active area 失效
    具有导电膜和磁畴膜的磁阻元件与中心有源区重叠

    公开(公告)号：US6040962A

    公开(公告)日：2000-03-21

    申请号：US78484

    申请日：1998-05-14

    申请人： Kiyosumi Kanazawa ,  Yoshiro Nakagawa

    发明人： Kiyosumi Kanazawa ,  Yoshiro Nakagawa

    IPC分类号： G11B5/012 ,  G11B5/31 ,  G11B5/39 ,  H01L43/08

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3929 ,  G11B5/3967 ,  H01L43/08 ,  G11B2005/3996 ,  G11B5/012 ,  G11B5/3113 ,  G11B5/3116

    摘要： The present invention is directed to an MR element and a thin film magnetic head that do not cause an increase in the electrical resistance value due to the presence of dead zones. When forming passive areas that include magnetic domain control films and conductive films at the two sides of a central active area through a vacuum film formation method, the magnetic domain control films are formed under film forming conditions that are different from the film forming conditions under which the conductive films are formed to ensure that the degree to which the conductive films overlap the central active area is set larger than the degree to which the magnetic domain control films overlap the central active area.

    摘要翻译： 本发明涉及不会由于存在死区而导致电阻值增加的MR元件和薄膜磁头。 当通过真空成膜法在中心活性区域的两侧形成包括磁畴控制膜和导电膜的无源区域时，在与成膜条件不同的成膜条件下形成磁畴控制膜， 形成导电膜以确保导电膜与中心有源区重叠的程度被设定为大于磁畴控制膜与中心有效区重叠的程度。