公开(公告)号：US06429577B1

公开(公告)日：2002-08-06

申请号：US09326951

申请日：1999-06-07

Applicant: Hideaki Kiryu ,  Kazuhisa Tanaka ,  Takeshi Saitoh

Inventor： Hideaki Kiryu ,  Kazuhisa Tanaka ,  Takeshi Saitoh

IPC: H01J102

CPC classification number: H01J61/302 ,  H01J61/34

Abstract: A discharge lamp comprising an arc tube containing a pair of electrodes in a light-emitting portion and an outer tube that envelops the light-emitting portion and is at least partly fused to the arc tube, wherein the outer tube comprises silicon dioxide in the range from 90 to 99.88 wt. % and boron in the range from 0.12 wt. % or more. The discharge lamp can inhibit the arc tube from deforming when the outer tube and arc tube are fused to each other by adjusting a softening temperature of the outer tube to an appropriate temperature and can realize a high accuracy of luminous intensity distribution.

Abstract translation: 一种放电灯，包括在发光部分中包含一对电极的电弧管和包封所述发光部分并且至少部分地熔合到所述电弧管的外管，其中所述外管包括在所述发光部分中的二氧化硅 从90至99.88wt。 ％和硼的范围为0.12wt。 ％ 或者更多。 当通过将外管的软化温度调节到适当的温度并使外管和电弧管彼此熔合时，放电灯可以抑制电弧管变形，并且可以实现高精度的发光强度分布。

公开(公告)号：US06380663B1

公开(公告)日：2002-04-30

申请号：US09602899

申请日：2000-06-23

Applicant: Tomoyuki Ikedo ,  Kouzou Adachi ,  Yoshinobu Ito ,  Ryotaro Matui

Inventor： Tomoyuki Ikedo ,  Kouzou Adachi ,  Yoshinobu Ito ,  Ryotaro Matui

IPC: H01J102

CPC classification number: H01J61/302 ,  H01J61/10 ,  H01J61/30 ,  H01J61/35 ,  H01J61/68 ,  H01J63/02 ,  H01J63/08

Abstract: In a gas discharge tube in accordance with the present invention, one or both of the inner wall face and outer wall face of a side tube body are provided with a coating made of a glass material or ceramics. As a result, the side tube body can be made of various materials regardless of properties of the gas filling the inside, whereby the gas discharge tube can have a wider range of processed forms and smaller dimensions at the same time, and its mass production can freely be carried out.

Abstract translation: 在根据本发明的气体放电管中，侧管体的内壁面和外壁面中的一个或两个设置有由玻璃材料或陶瓷制成的涂层。 结果，侧管体可以由各种材料制成，而不管填充内部的气体的性质如何，由此气体放电管可以同时具有更宽范围的加工形式和更小的尺寸，并且其批量生产可以 自由地进行。

公开(公告)号：US06351059B1

公开(公告)日：2002-02-26

申请号：US09399518

申请日：1999-09-20

Applicant: Hisashi Takemura

Inventor： Hisashi Takemura

IPC: H01J102

CPC classification number: H01J3/022

Abstract: A field-emission type cold cathode is disclosed, by which the degradation of the withstand voltage between the gate electrode and emitter and discharge destruction are suppressed, and the operating voltage and the distance between the gate electrode and emitter can be reduced. The cold cathode comprises a substrate (on a surface of which an emitter is formed) for functioning as a leading emitter electrode; and a gate electrode, formed via an insulating film on the substrate, having an aperture which surrounds the emitter via a space. The height of a boundary (which faces the space) between the insulating film and the substrate is lower than the height of the surface of the substrate on which the emitter is formed. An insulated trench surrounds the area on which the emitter is formed, where the above boundary is placed between the emitter and the trench, and a part of the insulating film is present between the boundary and the trench.

Abstract translation: 公开了一种场致发射型冷阴极，通过该场致发射型冷阴极，能够抑制栅电极与发射极之间的耐电压劣化和放电破坏，能够降低工作电压和栅电极与发射极之间的距离。 冷阴极包括用作起始发射电极的基板（在其表面上形成发射极）; 以及通过基板上的绝缘膜形成的具有经由空间围绕发射极的孔径的栅电极。 绝缘膜和基板之间的边界（其面向空间）的高度低于其上形成发射体的基板的表面的高度。 绝缘沟槽围绕形成发射体的区域，其中上述边界位于发射极和沟槽之间，绝缘膜的一部分存在于边界和沟槽之间。

公开(公告)号：US06333593B1

公开(公告)日：2001-12-25

申请号：US09373323

申请日：1999-08-12

Applicant: Ammar Derraa

Inventor： Ammar Derraa

IPC: H01J102

CPC classification number: H01J9/025

Abstract: A method of fabricating field emission arrays which employs a single mask to define emitter tips and their corresponding resistors. Column lines may also be defined without requiring the use of an additional mask. The method includes disposing substantially mutually parallel conductive lines onto a substrate of the field emission array. The conductive lines may be patterned from a layer of conductive material or selectively deposited onto the substrate. One or more material layers, from which the emitter tips and resistors will be defined, are disposed onto the conductive lines and the regions of substrate exposed between adjacent conductive lines. The exposed surface of the layer or layers of emitter tip and resistor material or materials may be planarized. A mask is disposed over the substantially planar surface. The emitter tips and resistors are defined through the mask and substantially longitudinal center portions of the conductive lines exposed through the layer or layers of emitter tip and resistor material or materials. The substantially longitudinal center portions of the conductive lines may be removed in order to define column lines and to electrically isolate adjacent column lines from one another. A field emission array that has been fabricated in accordance with the method of the present invention is also within the scope of the present invention. Such a field emission array may include a substrate including resistors protruding therefrom, column lines laterally adjacent the resistors, and one or more emitter tips disposed substantially above each of the resistors.

Abstract translation: 一种制造场发射阵列的方法，其使用单个掩模来限定发射极尖端及其对应的电阻器。 也可以定义列线，而不需要使用额外的掩模。 该方法包括将基本相互平行的导线设置在场发射阵列的衬底上。 导电线可以从导电材料层图案化或选择性地沉积到衬底上。 将限定发射极尖端和电阻器的一个或多个材料层设置在导线上并且暴露在相邻导线之间的衬底区域。 发射极尖端和电阻器材料或材料的层的暴露表面可以被平坦化。 掩模设置在基本平坦的表面上。 发射极尖端和电阻器通过掩模和通过发射极尖端和电阻器材料或材料的层暴露的导线的基本纵向中心部分来限定。 可以去除导线的基本上纵向的中心部分以便限定列线并且使彼此相邻的列线电隔离。 根据本发明的方法制造的场致发射阵列也在本发明的范围内。 这样的场发射阵列可以包括包括从其突出的电阻器的衬底，与电阻器横向相邻的列线，以及基本上设置在每个电阻器上方的一个或多个发射极尖端。

公开(公告)号：US06249080B1

公开(公告)日：2001-06-19

申请号：US09140647

申请日：1998-08-26

Applicant: Takuya Komoda ,  Nobuyoshi Koshida

Inventor： Takuya Komoda ,  Nobuyoshi Koshida

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/312

Abstract: A field emission electron source comprising an electrically conductive substrate, an oxidized or nitrided porous polysilicon layer formed on the surface of said electrically conductive substrate on one side thereof and having nano-structures and a thin metal film formed on said oxidized or nitrided porous polysilicon layer. Voltage is applied to said thin metal film used as a positive electrode with respect to said electrically conductive substrate thereby to emit electron beam through said thin metal film.

Abstract translation: 一种场致发射电子源，包括导电衬底，在其一面上形成在所述导电衬底的表面上并具有纳米结构的氧化或氮化的多孔多晶硅层，以及形成在所述氧化或氮化的多孔多晶硅层上的薄金属膜 。 电压被施加到相对于所述导电衬底用作正电极的所述薄金属膜上，从而通过所述薄金属膜发射电子束。

公开(公告)号：US06204596B1

公开(公告)日：2001-03-20

申请号：US09107392

申请日：1998-06-30

Applicant: John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

Inventor： John M. Macaulay ,  Peter C. Searson ,  Robert M. Duboc, Jr. ,  Christopher J. Spindt

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/2973 ,  Y10T428/298

Abstract: An electron-emitting device contains a lower conductive region (22), a porous insulating layer (24A, 24B, 24D, 24E, or 24F) overlying the lower conductive region, and a multiplicity of electron-emissive elements (30, 30A, or 30B) situated in pores (281) extending through the porous layer. The pores are situated at locations substantially random relative to one another. The lower conductive region typically contains a highly conductive portion (22A) and an overlying highly resistive portion (22B). Alternatively or additionally, a patterned gate layer (34B, 40B, or 46B) overlies the porous layer. Openings (36, 42, or 541) corresponding to the filaments extend through the gate layer at locations generally centered on the filaments such that the filaments are separated from the gate layer.

Abstract translation: 电子发射器件包含覆盖在下导电区域上的下导电区域（22），多孔绝缘层（24A，24B，24D，24E或24F）和多个电子发射元件（30,30A或 30B）位于延伸穿过多孔层的孔（281）中。 孔位于相对于彼此基本上随机的位置。 下导电区域通常包含高导电部分（22A）和覆盖的高电阻部分（22B）。 或者或另外，图案化的栅极层（34B，40B或46B）覆盖在多孔层上。 对应于长丝的开口（36,42或541）在通常以灯丝为中心的位置处延伸穿过栅极层，使得灯丝与栅极层分离。

公开(公告)号：US06806629B2

公开(公告)日：2004-10-19

申请号：US10094426

申请日：2002-03-08

Applicant: Chien-Min Sung

Inventor： Chien-Min Sung

IPC: H01J102

CPC classification number: H01J1/304 ,  C01B32/25 ,  H01J1/3048 ,  H01J9/025 ,  H01J2201/30457

Abstract: An amorphous diamond material that is capable of emitting electrons in a vacuum upon the input of a sufficient amount of energy is disclosed. The material may utilize both compositional and geometrical aspects in order to maximize electron output and minimize required energy input. In one aspect, the amorphous diamond material may include at least about 90% carbon atoms with at least about 30% of such carbon atoms bonded in distorted tetrahedral coordination. Further, the material may be configured with an emission surface having an asperity height of from about 10 to about 10,000 nanometers. A variety of energy types may be used separately or in combination to facilitate electron flow, such as thermal energy, light energy, and induced electric field energy. The amorphous diamond material may be incorporated into a variety of vacuum-type devices, such as switches, laser diodes, electrical generators, and cooling devices.

Abstract translation: 公开了一种非晶金刚石材料，其能够在输入足够量的能量时在真空中发射电子。 该材料可以利用组合和几何方面，以最大化电子输出并最小化所需的能量输入。 一方面，无定形金刚石材料可以包括至少约90％的碳原子，其中至少约30％的这些碳原子以变形的四面体配位结合。 此外，材料可以配置有具有约10至约10,000纳米的粗糙度高度的发射表面。 各种能量类型可以单独使用或组合使用以促进电子流动，例如热能，光能和感应电场能量。 非晶金刚石材料可以结合到各种真空型装置中，例如开关，激光二极管，发电机和冷却装置。

公开(公告)号：US06806627B2

公开(公告)日：2004-10-19

申请号：US10120975

申请日：2002-04-11

Applicant: William Lawrence Manning

Inventor： William Lawrence Manning

IPC: H01J102

CPC classification number: H01J61/90 ,  H01J61/545 ,  H01J61/86

Abstract: A probe stabilized arc discharge lamp including a base portion, a window spaced from the base portion, a side wall interconnecting the base portion with the window. The side wall, the base portion, and the window define a chamber. A first electrode is disposed vertically in the chamber and extends outwardly through the base portion. A second electrode is also disposed vertically in the chamber and is spaced from the first electrode. The second electrode extends outwardly through the base portion. The first and second electrodes define an arc gap. There is also at least one trigger probe extending to or proximate to the arc gap for triggering an arc in the arc gap. Also, a reflector is disposed about the arc gap for directing radiation generated by the arc out the window. A sparker may also be provided.

Abstract translation: 一种探针稳定的电弧放电灯，包括基部，与基部间隔开的窗口，将基部与窗口互连的侧壁。 侧壁，基部和窗口限定了一个室。 第一电极垂直地设置在腔室中并且通过基部向外延伸。 第二电极也垂直设置在腔室中并与第一电极间隔开。 第二电极通过基部向外延伸。 第一和第二电极限定一弧形间隙。 还有至少一个触发探针延伸到或接近电弧间隙以触发电弧间隙中的电弧。 而且，围绕电弧间隙布置反射器，用于将由电弧产生的辐射引导出窗口。 也可以提供火花塞。

公开(公告)号：US06771010B2

公开(公告)日：2004-08-03

申请号：US09845845

申请日：2001-04-30

Applicant: Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

Inventor： Xia Sheng ,  Nobuyoshi Koshida ,  Huei-Pei Kuo

IPC: H01J102

CPC classification number: H01J1/308 ,  H01J9/022 ,  Y10S438/96

Abstract: A high emission electron emitter includes an electron injection layer, an active layer of high porosity porous silicon material in contact with the electron injection layer, a contact layer of low porosity porous silicon material in contact with the active layer and including an interface surface with a heavily doped region, and an optional top electrode in contact with the contact layer. The contact layer reduces contact resistance between the active layer and the top electrode and the heavily doped region reduces resistivity of the contact layer thereby increasing electron emission efficiency and stable electron emission from the top electrode. The electron injection layer is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer and the contact layer are formed in a layer of silicon material that is deposited on the electron injection layer and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization, the interface surface can be doped to form the heavily doped region. The layer of silicon material can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.

Abstract translation: 高发射电子发射体包括电子注入层，与电子注入层接触的高孔隙率多孔硅材料的有源层，与活性层接触的低孔隙率多孔硅材料的接触层， 重掺杂区域和与接触层接触的可选顶部电极。 接触层降低有源层和顶部电极之间的接触电阻，并且重掺杂区域降低接触层的电阻率，从而增加电子发射效率和从顶部电极稳定的电子发射。 电子注入层由诸如n +半导体，n +单晶硅，金属，硅化物或氮化物的导电材料制成。 有源层和接触层形成在沉积在电子注入层上的硅材料层中，然后在氢氟酸溶液中电化学阳极氧化。 在阳极氧化之前，可以将界面表面掺杂以形成重掺杂区域。 硅材料层可以是多孔外延硅，多孔多晶硅，多孔非晶硅和多孔碳化硅。

公开(公告)号：US06633113B2

公开(公告)日：2003-10-14

申请号：US10146627

申请日：2002-05-14

Applicant: Zhongyi Xia ,  Jimmy J. Browning ,  Charles M. Watkins ,  David A. Cathey

Inventor： Zhongyi Xia ,  Jimmy J. Browning ,  Charles M. Watkins ,  David A. Cathey

IPC: H01J102

CPC classification number: H01J29/085

Abstract: A high resolution field emission display includes a faceplate and a baseplate. The faceplate includes a transparent viewing layer, a transparent conductive layer formed on the transparent viewing layer and intersecting stripes of light-absorbing, opaque insulating material formed on the transparent conductive layer. The insulating material defines openings less than one hundred microns wide between the intersecting stripes. The faceplate also includes a plurality of localized regions of cathodoluminescent material, each formed in one of the openings. The cathodoluminescent material includes a metal oxide providing reduced resistivity in the cathodoluminescent material. Significantly, the reduced resistivity of the cathodoluminescent material together with the focusing effect of the insulating material provide increased acuity in luminous images formed on the faceplate. The baseplate includes a substrate, an emitter formed on the substrate and a dielectric layer formed on the substrate and having an opening formed about the emitter. The baseplate also includes a conductive extraction grid formed on the dielectric layer and having an opening formed about the emitter.

Abstract translation: 高分辨率场致发射显示器包括面板和底板。 面板包括透明观察层，形成在透明观察层上的透明导电层和形成在透明导电层上的光吸收不透明绝缘材料的相交条纹。 绝缘材料在相交条纹之间限定了小于百微米宽的开口。 面板还包括多个阴极发光材料的局部区域，每个区域形成在一个开口中。 阴极发光材料包括在阴极发光材料中提供降低的电阻率的金属氧化物。 显着地，阴极发光材料的电阻率降低以及绝缘材料的聚焦效果在面板上形成的发光图像中提供了增加的锐度。 基板包括基板，形成在基板上的发射极和形成在基板上并具有围绕发射极形成的开口的电介质层。 底板还包括形成在电介质层上并具有围绕发射极形成的开口的导电提取栅格。