Abstract:
The ion implanting method uses both reciprocatively scanning an ion beam in an X direction and reciprocatively mechanically driving a substrate in a Y direction orthogonal thereto. An implanting step of implanting ions separately for two implanted regions with different dose amounts of the substrate is executed plural times by changing at the center of the substrate a driving speed of the substrate. A rotating step of rotating the substrate around its center by a prescribed angle is executed once during each of the intervals between the respective implanting steps and while the ion beam is not applied to the substrate.
Abstract:
A method and apparatus for emission lithography using a patterned emitter wherein, in the apparatus for emission lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet, a direct current magnetic field generator or a deflection system, thereby achieving an exact one-to-one projection or an exact x-to-one projection of the desired pattern etched on the substrate.
Abstract:
In order to provide a full-automatic scanning electron microscope which carries out investigation jobs full-automatically from fine adjustment to reviewing, the scanning electron microscope of the present invention has a function of calculating the accuracy of correction after correction of coordinates and displaying it with vectors 39, a function of automatically determining a searching magnification for automatic object detection from the obtained information after correction of coordinates, and a function of calculating the frequency of occurrence of objects or defects and a time required for measurement from the searching magnification and conditions of measurement.
Abstract:
A method is provided for uniformly implanting a wafer with an ion beam. The wafer is generally of the type with a surface area in the form of a disk with a diameter and center. The ion beam is first formed as an elongated shape incident on the wafer, the shape having a length along a first axis smaller than the diameter, and a width shorter than the length along a second axis. Next, the wafer is translated at a variable translational velocity in a direction substantially parallel with the second axis. The wafer is also rotated substantially about the center at a rotational velocity. These movements are made such that the ion beam implants the wafer with substantially uniform dose across the surface area of the wafer. The wafer is preferably translated such that the ion beam implants the wafer from one side of the wafer, across the surface area of the wafer, and through another side of the wafer, in a selected velocity versus position profile. The wafer is also tilted while rotating such that the ion beam implants the surface area at a substantially constant angle relative to a crystal axis of the wafer. The wafer can also be translated in a direction substantially parallel to the ion beam such that the ion beam implants the surface area with a substantially constant spot size. The methods of the invention also include determining beam current density of the ion beam, and adjusting the variable translational velocity, and rotational velocity, as a function of the current density.
Abstract:
The inventive system comprises a scanning microscope with at least one monitor, a computer and inputting means. Furthermore, at least one laser and control electronics are provided. All of these elements can be arranged on a table top. The laser and the control electronics are stored in a electromagnetically shielded housing wherein the housing can be completely stored under the table top. The housing comprises an U-shaped control panel which embraces a part of the table top when the housing is stored completely under the table top.
Abstract:
According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.
Abstract:
A method and an apparatus for pyroelectric lithography using a patterned emitter is provided. In the apparatus for pyroelectric lithography, a pyroelectric emitter or a ferroelectric emitter is patterned using a mask and it is then heated. Upon heating, electrons are not emitted from that part of the emitter covered by the mask, but are emitted from the exposed part of the emitter not covered by the mask so that the shape of the emitter pattern is projected onto the substrate. To prevent dispersion of emitted electron beams, which are desired to be parallel, the electron beams are controlled using a magnet or a projection system, thereby achieving exact a one-to-one projection or a x-to-one projection of the desired pattern etched on the substrate.
Abstract:
An apparatus and method for determining a force of interaction between a sample and a tip on a cantilever. The method uses a non-Hookian equation to model the cantilever as it is deflected by the force of interaction between the sample and the cantilever tip. The sample is positioned at a predetermined distance from the cantilever tip such that the cantilever is deflected by the force of interaction. The positions of a plurality of points on the cantilever are then rapidly measured and the force of interaction from the measured positions is then obtained using a non-Hookian model that accounts for higher order vibrational modes of the cantilever.
Abstract:
An electrical equivalent circuit is provided for an electrospray process. It is a series circuit which includes a power supply voltage (Vapp), a voltage (Vec) established at the electrochemical contact to the solution, a solution resistance (Rs), a constant current regulator which represents the processes of charge separation and charge transport in the gap between the spray needle aperture and the counter electrode, and a voltage (Vcn) caused by charge neutralization at the counter electrode. A current i, established by the constant current regulator flows throughout the entire circuit. Current-voltage curves are developed for each part of the circuit. From these it is shown that in the case where Rs is negligible (the power supply is connected directly to a conducting needle) the shape of the current-voltage curve is dictated by the constant current regulator established by the charge separation process, the gap, and the counter electrode. The solution resistance is significant if a non-conducting needle is used so that the electrochemical contact to the solution is remote from the tip. The high series resistance acts to stabilize the operation of an electrospray ionization device enabling operation over a wider range of experimental conditions than without it. This occurs somewhat naturally in a narrow-bore glass capillary when the contact to the solution is several cm from the capillary tip. Stability can be achieved with a separate series resistor for glass needles with tip contact, metal-coated glass needles, wide-bore glass needles and metal needles.
Abstract:
Spreading of an ion beam when passing through a dipole magnet is reduced or suppressed by electrostatic ion beam confinement which supplements magnetic confinement which may be provided. The magnetic confinement is enhanced by the provision of a magnetic mirror through concentration and localized increase of the dipole field with a concave profile of the pole pieces faces and/or provision of permanent magnets or localized regions of material of increased permeability to form magnetic cusps. Pitch and geometry of convex portions of the pole piece faces are adjusted to increase the mirror ratio and the location of the maximum mirror field relative to the thickness of a graphite or insulating liner which may be employed. Electrostatic confinement elements in the form of negatively charged electrodes and/or electrically isolated electrodes or insulators which assume a negative charge. Ionization of plasma between the pole pieces may be enhanced by application of a VHF/UHF field having a frequency of about 40 MHz to 100 MHZ or higher.