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公开(公告)号：US06875986B1
公开(公告)日：2005-04-05
申请号：US09559345
申请日：2000-04-27
CPC分类号： H01J27/08 , H01J27/02 , H01J2237/08 , H01J2237/31701
摘要： According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.
摘要翻译： 根据离子产生方法，由要产生的所需离子的元素组成的离子源材料被加热，使得产生化合物的蒸汽，并且通过排出蒸气产生离子。 碘化物没有腐蚀性，可以稳定地电离。 此外，它几乎不与氧气或水反应并且是安全的。
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2.发明授权Ion implantation apparatus, ion generating apparatus and semiconductor manufacturing method with ion implantation processes 失效离子注入装置，离子发生装置和具有离子注入工艺的半导体制造方法公开(公告)号：US06335534B1
公开(公告)日：2002-01-01
申请号：US09291967
申请日：1999-04-15
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used wit each ion implantation step.
摘要翻译： 具有形成开口的导电掩模位于半导体衬底之上，并且通过导电掩模将离子注入到半导体衬底的表面中，从而形成离子注入层。 对于在不同条件下的离子注入，每个离子注入步骤都使用专用的导电掩模。
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公开(公告)号：US06646268B2
公开(公告)日：2003-11-11
申请号：US10083564
申请日：2002-02-27
IPC分类号： H01J3700
CPC分类号： H01J27/08 , H01J27/02 , H01J2237/08 , H01J2237/31701
摘要： According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.
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公开(公告)号：US06614033B2
公开(公告)日：2003-09-02
申请号：US10002296
申请日：2001-12-05
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J2237/31711
摘要： An electrically conductive mask having openings formed is located above a semiconductor substrate and ions are implanted into the surface of the semiconductor substrate through the electrically conductive mask, thereby forming ion implanted layers. For ion implantation under different conditions, a dedicated electrically conductive mask is used with each ion implantation step.
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公开(公告)号：US06570169B2
公开(公告)日：2003-05-27
申请号：US10036453
申请日：2002-01-07
申请人： Kyoichi Suguro , Katsuya Okumura
发明人： Kyoichi Suguro , Katsuya Okumura
IPC分类号： H01J37317
CPC分类号： H01L21/26593 , H01J37/3171 , H01L21/26513 , H01L21/324
摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
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6.发明授权公开(公告)号：US06239441B1
公开(公告)日：2001-05-29
申请号：US09007053
申请日：1998-01-14
申请人： Kyoichi Suguro , Katsuya Okumura
发明人： Kyoichi Suguro , Katsuya Okumura
IPC分类号： H01J37317
CPC分类号： H01L21/26593 , H01J37/3171 , H01L21/26513 , H01L21/324
摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
摘要翻译： 本发明的目的是避免由于重复离子注入和退火过程而导致的Si衬底的机械强度降低。 当Si衬底表面温度保持在-60℃以下时，注入离子。 然后加热Si衬底以回收由离子注入引起的注入缺陷。 根据需要重复低温离子注入和退火处理的这种组合。
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7.发明授权公开(公告)号：US06365492B1
公开(公告)日：2002-04-02
申请号：US09722477
申请日：2000-11-28
申请人： Kyoichi Suguro , Katsuya Okumura
发明人： Kyoichi Suguro , Katsuya Okumura
IPC分类号： H01L21265
CPC分类号： H01L21/26593 , H01J37/3171 , H01L21/26513 , H01L21/324
摘要： The purpose of the present invention is to avoid a decrease in the mechanical strength of a Si substrate because of the repetition of ion-implantation and annealing processes. As ions are implanted while the Si substrate surface temperature is kept at as low as −60° C. or less. Then the Si substrate is heated to recover the implantation defects caused by the ion-implantation. Such a combination of the low temperature ion-implantation and the annealing processes is repeated as required.
摘要翻译： 本发明的目的是避免由于重复离子注入和退火过程而导致的Si衬底的机械强度降低。 当Si衬底表面温度保持在-60℃或更低时，注入离子。 然后加热Si衬底以回收由离子注入引起的注入缺陷。 根据需要重复低温离子注入和退火处理的这种组合。
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公开(公告)号：US09034467B2
公开(公告)日：2015-05-19
申请号：US13192694
申请日：2011-07-28
申请人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
发明人： Masamitsu Itoh , Katsuya Okumura , Taro Inada , Jun Watanabe
CPC分类号： B08B7/0028 , B05D3/0254 , B05D5/00 , G03F7/707 , G03F7/70925 , Y10T428/28 , Y10T428/2848
摘要： According to one embodiment, a reticle chuck cleaner for cleaning a reticle chuck of an EUV exposure apparatus includes a substrate having a shape to be carried to the reticle chuck of the EUV exposure apparatus, and an adhesive formed on one of the main surfaces of the substrate.
摘要翻译： 根据一个实施例，用于清洁EUV曝光装置的光罩卡盘的掩模版卡盘清洁器包括具有要携带到EUV曝光装置的掩模版卡盘的形状的基板，以及形成在其中一个主表面上的粘合剂 基质。
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公开(公告)号：US20130313429A1
公开(公告)日：2013-11-28
申请号：US13954425
申请日：2013-07-30
申请人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
发明人： Nobuharu Noji , Yoshihiko Naito , Hirosi Sobukawa , Kenji Terao , Masahiro Hatakeyama , Katsuya Okumura
IPC分类号： H01J37/26
CPC分类号： H01J37/265 , G01R31/307 , H01J37/04 , H01J2237/2441 , H01J2237/2446 , H01J2237/2594 , H01J2237/2817
摘要： Provided is a method and an apparatus for inspecting a sample surface with high accuracy. Provided is a method for inspecting a sample surface by using an electron beam method sample surface inspection apparatus, in which an electron beam generated by an electron gun of the electron beam method sample surface inspection apparatus is irradiated onto the sample surface, and secondary electrons emanating from the sample surface are formed into an image toward an electron detection plane of a detector for inspecting the sample surface, the method characterized in that a condition for forming the secondary electrons into an image on a detection plane of the detector is controlled such that a potential in the sample surface varies in dependence on an amount of the electron beam irradiated onto the sample surface.
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10.发明授权Semiconductor device, electrode member and electrode member fabrication method 有权半导体器件，电极部件和电极部件的制造方法公开(公告)号：US08324726B2
公开(公告)日：2012-12-04
申请号：US11351338
申请日：2006-02-10
IPC分类号： H01L23/34
CPC分类号： H01L23/49811 , H01L23/49827 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L25/0655 , H01L25/072 , H01L2224/37147 , H01L2224/40095 , H01L2224/40139 , H01L2224/40225 , H01L2224/45015 , H01L2224/45124 , H01L2224/45147 , H01L2224/48091 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01068 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/1305 , H01L2924/13055 , H01L2924/351 , H05K1/115 , H01L2924/00 , H01L2924/00015 , H01L2224/05599
摘要： A semiconductor device that improves the heat cycle resistance and power cycle resistance of a power module. An electrode member in which copper posts are formed in a plurality of perforations cut in a support made of a ceramic material is soldered onto a side of an IGBT where an emitter electrode is formed. By soldering the copper posts onto the electrode, heat generated in the IGBT is transferred to the electrode member and is radiated. In addition, even if a material of which the IGBT is made and copper differ in thermal expansivity, stress on a soldered interface is reduced and distortion is reduced. This suppresses the appearance of a crack. As a result, the heat cycle resistance and power cycle resistance of a power module can be improved.
摘要翻译： 一种改善功率模块的热循环电阻和功率循环电阻的半导体器件。 在由陶瓷材料制成的支撑体上切割的多个穿孔中形成铜柱的电极部件被焊接到形成有发射极的IGBT的一侧。 通过将铜柱焊接到电极上，在IGBT中产生的热量转移到电极部件并被辐射。 此外，即使制造IGBT的材料和铜的热膨胀性不同，焊接界面上的应力降低，并且变形减小。 这样可以抑制裂纹的出现。 结果，可以提高功率模块的耐热循环电阻和功率循环电阻。
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