Abstract:
A method for generating a succession of pseudo-random numbers includes choosing at least one chaotic map, and choosing a seed for the chaotic map and a number of iterations for the chaotic map. The succession of pseudo-random numbers are generated by executing iteratively generating a pseudo-random number as a function of a final state reached by the chaotic map iterated for the current number of iterations starting from the current seed, and generating a new seed for the chaotic map or a new number of iterations as a function of the final state.
Abstract:
A fully differential amplifier device includes a first input and a second input, a first output and a second output, and a differential input stage, provided with a first input transistor and a second input transistor. The first input and the first output and the second input and the second output are directly connected selectively in a first operating configuration and disconnected in a second operating configuration. The amplifier device further includes a current-generator circuit connected so as to supply respective first currents to the first and second outputs irrespective of a state of conduction of the first and second input transistors.
Abstract:
A method of diagnosing misfire or partial combustion conditions in an internal combustion engine without using a phonic wheel discriminates the combustion conditions with soft-computing techniques directly exploiting a combustion pressure signal generated by a common pressure sensor installed in the cylinder. There exists an exploitably close correlation between the instantaneous values of the internal cylinder pressure and the occurrence of misfire or partial combustion conditions, and thus the cylinder pressure signal may be reliably used for diagnosing misfires or partial combustions in functioning conditions of the engine.
Abstract:
A non-volatile memory electronic device is integrated on a semiconductor and is of the Flash EEPROM type with an architecture of the NAND type including at least one memory matrix divided into sectors being singularly erasable and organized in rows or word lines and columns or bit lines of memory cells. Advantageously, the matrix may include logic sectors wherein pairs of rows or word lines are electrically short-circuited and refer to a single biasing terminal, source terminals of the associated cells of each pair of rows associated with a same source select line referring to a corresponding biasing terminal, and at least one pair of independent drain select lines, each of the rows and of the lines being provided with metallization shunts to by-pass groups of bit lines and/or to speed up the propagation times of the biasing in the corresponding logic sector.
Abstract:
In a displacement detection device, an acceleration sensor generates at least a first acceleration signal relating to an axis of detection, and a displacement detection circuit is connected to the acceleration sensor has a comparator stage for comparing the acceleration signal with a programmable acceleration threshold and generates a displacement-detection signal. A high-pass filter is arranged between the acceleration sensor and the comparator stage so as to reduce a DC component of the acceleration signal. The cut-off frequency of the high-pass filter is modified according to the type of displacements that are to be detected.
Abstract:
A silicon bipolar VCO implementing a double-coupled transformer is disclosed. The VCO circuit, which is suitable in the field of integrated RF circuits, has been integrated into a universal LNB having a down-converter block and PLL merged into a single die and implemented in silicon bipolar technology. The integrated transformer is formed by three turns of stacked metal layers, where the topmost metal layer is employed for the resonator inductance. The VCO is missing conventional biasing resistors and decoupling capacitors, thus improving phase noise and tuning range performance.
Abstract:
A digital-to-analog converter (DAC) for an audio system may include at least first and second subsets of individually selectable elementary current sources for delivering analog output current contributions, a code conversion circuit for selecting elementary current sources of first and second subsets as a function of codes of a pulse code modulated (PCM) input signal. The DAC may multiply by a certain factor incoming codes of the PCM signal after their value has remained lower than a threshold for a certain period of time and for as long as their value equals or surpasses the threshold value, and may correspondingly scale and de-scale by the same factor the amplitude of the analog output current contributions produced by the elementary current sources of the two subsets.
Abstract:
In a semiconductor memory device, a method for obtaining at least one reference cell adapted to be exploited as a generator of a reference signal, the reference signal depending on a value of an electrical characteristic of the at least one reference cell. The method includes providing a population of auxiliary cells, operating on said population of auxiliary cells for varying a value of the electrical characteristic thereof, in such a way that the varied values are statistically distributed in a range including a value of the electrical characteristic corresponding to the reference signal, and choosing the at least one reference cell, wherein choosing includes choosing at least one auxiliary cell in the population of auxiliary cells having the value of the electrical characteristic close to the value corresponding to the reference signal with a pre-defined tolerance.
Abstract:
A method controls write/erase operations in a memory device, such as a NAND flash memory. The method includes dividing the memory device in physical blocks, wherein each physical block is comprised of a number of pages; considering the memory device as comprising consecutive virtual blocks, each virtual block including consecutive sectors; associating to each virtual block a virtual block number; selecting the size of the virtual blocks equal to a multiple of the size of the physical blocks; and creating a virtual-to-physical mapping table having entries. Each entry in the mapping table stores a pointer to a root node of a tree structure that links logically a set of physical blocks in the memory device.
Abstract:
A method and circuit for programming a multilevel memory of a flash EEPROM type having a matrix of cells grouped in memory words. The method provides for the simultaneous generation of a first programming voltage value and a second verify voltage value to bias word lines of the memory matrix during programming and verify operations, respectively, of the memory itself. A circuit implementing the above method is also provided.