公开(公告)号：US20200233311A1

公开(公告)日：2020-07-23

申请号：US16076231

申请日：2017-02-16

Applicant: ASML NETHERLANDS B.V. ,  Lam Research Corporation

Inventor： Michael KUBIS ,  Marinus JOCHEMSEN ,  Richard Stephen WISE ,  Nader SHAMMA ,  Girish Anant DIXIT ,  Liesbeth REIJNEN ,  Ekaterina Mikhailovna VIATKINA ,  Melisa LUCA ,  Johannes Catharinus Hubertus MULKENS

IPC: G03F7/20 ,  G01N21/47

Abstract: A method, and associated apparatus and computer program, to determine corrections for a parameter of interest, such as critical dimension, of a patterning process. The method includes determining an exposure control correction for an exposure control parameter and, optionally, determining a process control correction for a process control parameter, based upon a measurement of the parameter of interest of a structure, and an exposure control relationship and a process control relationship. The exposure control relationship describes the dependence of the parameter of interest on the exposure control parameter and the process control relationship describes the dependence of the parameter of interest on the process control parameter. The exposure control correction and process control correction may be co-optimized to minimize variation of the parameter of interest of subsequent exposed and processed structures relative to a target parameter of interest.

公开(公告)号：US20200232933A1

公开(公告)日：2020-07-23

申请号：US16642402

申请日：2018-08-09

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas Leo Maria HOOGENBOOM ,  Hugo Augustinus Joseph CRAMER

IPC: G01N21/93 ,  G01N21/956 ,  G03F7/20

Abstract: A method for manufacturing or adjusting a reticle having a predetermined functionality, the method including obtaining a reticle having a first pattern, the first pattern representing a first functionality of structures provided to a substrate using the reticle, and patterning the reticle having the first pattern with a second pattern using a pattern generating tool, the combined first and second patterns having the predetermined functionality.

公开(公告)号：US20200230665A1

公开(公告)日：2020-07-23

申请号：US16841547

申请日：2020-04-06

Applicant: ASML Netherlands B.V.

Inventor： Marc SMITS ,  Johan Joost KONING ,  Chris Franciscus Jessica LODEWIJK ,  Hindrik Willem MOOK ,  Ludovic LATTARD

IPC: B08B7/04 ,  H01J37/18 ,  H01J37/147 ,  B08B17/02 ,  H01J37/317 ,  H01J37/02

Abstract: A charged particle beam system is disclosed, comprising: a charged particle beam generator for generating a beam of charged particles; a charged particle optical column arranged in a vacuum chamber, wherein the charged particle optical column is arranged for projecting the beam of charged particles onto a target, and wherein the charged particle optical column comprises a charged particle optical element for influencing the beam of charged particles; a source for providing a cleaning agent; a conduit connected to the source and arranged for introducing the cleaning agent towards the charged particle optical element; wherein the charged particle optical element comprises: a charged particle transmitting aperture for transmitting and/or influencing the beam of charged particles, and at least one vent hole for providing a flow path between a first side and a second side of the charged particle optical element, wherein the vent hole has a cross section which is larger than a cross section of the charged particle transmitting aperture. Further, a method for preventing or removing contamination in the charged particle transmitting apertures is disclosed, comprising the step of introducing the cleaning agent while the beam generator is active.

公开(公告)号：US10714427B2

公开(公告)日：2020-07-14

申请号：US15444396

申请日：2017-02-28

Applicant: ASML Netherlands B.V.

Inventor： Johannes Cornelis Jacobus De Langen ,  Marcel Nicolaas Jacobus van Kervinck ,  Vincent Sylvester Kuiper

IPC: H01L23/00 ,  H01L23/544 ,  G06K19/06 ,  G06F21/44 ,  G09C5/00 ,  G06F21/73 ,  H04L29/06 ,  G06K7/14 ,  H01L25/065 ,  H04L9/14 ,  H04L9/32

Abstract: An electronic device comprising a semiconductor chip which comprises a plurality of structures formed in the semiconductor chip, wherein the semiconductor chip is a member of a set of semiconductor chips, the set of semiconductor chips comprises a plurality of subsets of semiconductor chips, and the semiconductor chip is a member of only one of the subsets. The plurality of structures of the semiconductor chip includes a set of common structures which is the same for all of the semiconductor chips of the set, and a set of non-common structures, wherein the non-common structures of the semiconductor chip of the subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a first portion of the non-common structures and a first portion of the common structures form a first non-common circuit, wherein the first non-common circuit of the semiconductor chips of each subset is different from a non-common circuit of the semiconductor chips in every other subset. At least a second portion of the non-common structures is adapted to store or generate a first predetermined value which uniquely identifies the first non-common circuit, wherein the first predetermined value is readable from outside the semiconductor chip by automated reading means.

公开(公告)号：US20200218170A1

公开(公告)日：2020-07-09

申请号：US16822870

申请日：2020-03-18

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Jens STÄCKER ,  Koenraad Remi André Maria SCHREEL ,  Roy WERKMAN

IPC: G03F9/00 ,  G03F7/20

Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

公开(公告)号：US10705439B2

公开(公告)日：2020-07-07

申请号：US15904946

申请日：2018-02-26

Applicant: ASML NETHERLANDS B.V. ,  ASML HOLDING N.V.

Inventor： Nicolaas Rudolf Kemper ,  Henrikus Herman Marie Cox ,  Sjoerd Nicolaas Lambertus Donders ,  Roelof Frederik De Graaf ,  Christiaan Alexander Hoogendam ,  Nicolaas Ten Kate ,  Martinus Hendrikus Antonius Leenders ,  Jeroen Johannes Sophia Maria Mertens ,  Frits Van Der Meulen ,  Joost Jeroen Ottens ,  Franciscus Johannes Herman Maria Teunissen ,  Jan-Gerard Cornelis Van Der Toorn ,  Martinus Cornelis Maria Verhagen ,  Marco Polizzi ,  Edwin Augustinus Matheus Van Gompel ,  Johannes Petrus Maria Smeulers ,  Stefan Philip Christiaan Belfroid ,  Herman Vogel

IPC: G03F7/20

Abstract: A porous member is used in a liquid removal system of an immersion lithographic projection apparatus to smooth uneven flows. A pressure differential across the porous member may be maintained at below the bubble point of the porous member so that a single-phase liquid flow is obtained. Alternatively, the porous member may be used to reduce unevenness in a two-phase flow.

公开(公告)号：US10705438B2

公开(公告)日：2020-07-07

申请号：US16716568

申请日：2019-12-17

Applicant: ASML NETHERLANDS B.V.

Inventor： Andre Bernardus Jeunink ,  Laurentius Johannes Adrianus Van Bokhoven ,  Stan Henricus Van Der Meulen ,  Yang-Shan Huang ,  Federico La Torre ,  Bearrach Moest ,  Stefan Carolus Jacobus Antonius Keij ,  Enno Van Den Brink ,  Christine Henriette Schouten ,  Hoite Pieter Theodoor Tolsma

IPC: G03F7/20 ,  G03F1/64 ,  G03F1/62

Abstract: A lithographic apparatus comprising a support structure constructed to support a patterning device and associated pellicle, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam, and a projection system configured to project the patterned radiation beam onto a target portion of a substrate, wherein the support structure is located in a housing and wherein pressure sensors are located in the housing.

公开(公告)号：US10705426B2

公开(公告)日：2020-07-07

申请号：US16097640

申请日：2017-04-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Gijs Kramer ,  Martijn Houben ,  Nicholas Peter Waterson ,  Thibault Simon Mathieu Laurent ,  Yuri Johannes Gabriël Van De Vijver ,  Marcus Martinus Petrus Adrianus Vermeulen ,  Simon Karel Ravensbergen ,  Vincentius Fransiscus Cloosterman ,  Siegfried Alexander Tromp ,  Coen Hubertus Matheus Baltis ,  Justin Johannes Hermanus Gerritzen ,  Niek Jacobus Johannes Roset

IPC: G03F7/20

Abstract: An extraction body for a support apparatus of a lithographic apparatus. The support apparatus is configured to support an object. The extraction body is formed with an opening at a surface thereof. The opening extends within the extraction body forming a first passageway. The first passageway is configured to fluidly communicate an extraction channel in the extraction body to liquid between the surface and the object. A first pressure in the extraction channel is less than ambient pressure. At least a part of the first passageway is sized and dimensioned such that when the liquid enters the first passageway via the opening, a second pressure in the first passageway associated with surface tension of the liquid is lower than the first pressure such that at least a portion of the liquid is retained in the first passageway.

公开(公告)号：US20200211818A1

公开(公告)日：2020-07-02

申请号：US16729177

申请日：2019-12-27

Applicant: ASML Netherlands B.V.

Inventor： Weihua YIN ,  Youfei JIANG

IPC: H01J37/26 ,  H01J37/147 ,  H01J37/12

Abstract: A charged particle system may include a first charged particle beam source provided on a first axis, and a second charged particle beam source provided on a second axis. There may also be provided a deflector arranged on the first axis. The deflector may be configured to deflect a beam generated from the second charged particle beam source toward a sample. A method of operating a charged particle beam system may include switching between a first state and a second state of operating a deflector. In the first state, a first charged particle beam generated from a first charged particle beam source may be blanked and a second charged particle beam generated from a second charged particle beam source may be directed toward a sample. In the second state, the second charged particle beam may be blanked and the first charged particle beam may be directed toward the sample.

公开(公告)号：US20200209757A1

公开(公告)日：2020-07-02

申请号：US16319587

申请日：2017-06-16

Applicant: ASML Netherlands B.V. ,  Carl Zeiss SMT GmbH

Inventor： Hans BUTLER ,  Bernhard Mathias GEUPPERT ,  Erik Roelof LOOPSTRA ,  Maurice Willem Jozef Etiënn WIJCKMANS

IPC: G03F7/20

Abstract: The present invention relates to a lithographic apparatus, comprising: —a base frame (10), adapted for mounting the lithographic apparatus (1) on a support surface (9), —a projection system (20) comprising: —a force frame (30), —an optical element (21) which is moveable relative to the force frame, —a sensor frame (40), which is separate from the force frame, —at least one sensor which is adapted to monitor the optical element, comprising at least one sensor (25) element which is mounted to the sensor frame, —a force frame support (31), which is adapted to support the force frame on the base frame, —an intermediate frame (45), which is separate from the force frame, —a sensor frame coupler (41), which is adapted to couple the sensor frame to the intermediate frame, —an intermediate frame support (46), which is separate from the force fame support and adapted to support the intermediate frame on the base frame.