公开(公告)号：US20220091514A1

公开(公告)日：2022-03-24

申请号：US17424991

申请日：2019-12-18

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  David Frans Simon DECKERS ,  Bijoy RAJASEKHARAN ,  Ignacio Salvador VAZQUEZ RODARTE ,  Sarathi ROY

IPC: G03F7/20 ,  G05B13/02

Abstract: A method of determining a control parameter for a lithographic process is disclosed, the method includes: defining a substrate model for representing a process parameter fingerprint across a substrate, the substrate model being defined as a combination of basis functions including at least one basis function suitable for representing variation of the process parameter fingerprint between substrates and/or batches of substrates; receiving measurements of the process parameter across at least one substrate; calculating substrate model parameters using the measurements and the basis functions; and determining the control parameter based on the substrate model parameters and the similarity of the at least one basis function to a process parameter fingerprint variation between substrates and/or batches of substrates.

公开(公告)号：US20200218170A1

公开(公告)日：2020-07-09

申请号：US16822870

申请日：2020-03-18

Applicant: ASML Netherlands B.V.

Inventor： Emil Peter SCHMITT-WEAVER ,  Jens STÄCKER ,  Koenraad Remi André Maria SCHREEL ,  Roy WERKMAN

IPC: G03F9/00 ,  G03F7/20

Abstract: A first substrate 2002 has a calibration pattern applied to a first plurality of fields 2004 by a lithographic apparatus. Further substrates 2006, 2010 have calibration patterns applied to further pluralities of fields 2008, 2012. The different pluralities of fields have different sizes and/or shapes and/or positions. Calibration measurements are performed on the patterned substrates 2002, 2006, 2010 and used to obtain corrections for use in controlling the apparatus when applying product patterns to subsequent substrates. Measurement data representing the performance of the apparatus on fields of two or more different dimensions (fields 2004, 2008, 2012 in this example) is gathered together in a database 2013 and used to synthesize the information needed to calibrate the apparatus for a new size. Calibration data is also obtained for different scan and step directions.

公开(公告)号：US20190011842A1

公开(公告)日：2019-01-10

申请号：US16079404

申请日：2017-02-22

Applicant: ASML NETHERLANDS B.V.

Inventor： Everhardus Cornelis MOS ,  Jochem Sebastiaan WILDENBERG ,  Roy WERKMAN ,  Erik Johannes Maria WALLERBOS

IPC: G03F7/20

Abstract: A method of characterizing distortions in a lithographic process, and associated apparatuses. The method includes obtaining measurement data corresponding to a plurality of measurement locations on a substrate, the measurement data comprising measurements performed on a plurality of substrates, and comprising one or more measurements performed on one or more of the substrates for each of the measurement locations. For each of the measurement locations, a first quality value representing a quality metric and a noise value representing a noise metric is determined from the measurements performed at that measurement location. A plurality of distortion parameters is determined, each distortion parameter configured to characterize a systematic distortion in the quality metric and a statistical significance of the distortion parameters from the first quality value and from the noise value is determined. Systematic distortion is parameterized from the distortion parameters determined to be statistically significant.

公开(公告)号：US20230400778A1

公开(公告)日：2023-12-14

申请号：US18032273

申请日：2021-10-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Reza SAHRAEIAN

IPC: G03F7/00 ,  G06N3/045 ,  G06N3/0475 ,  G06N3/094

CPC classification number: G03F7/705 ,  G06N3/045 ,  G06N3/0475 ,  G06N3/094

Abstract: A method to infer a current sampling scheme for one or more current substrates is provided, the method including: obtaining a first model trained to infer an optimal sampling scheme based on inputting context and/or pre-exposure data associated with one or more previous substrates, wherein the first model is trained in dependency of an outcome of a second model configured to discriminate between the inferred optimal sampling scheme and a pre-determined optimal sampling scheme; and using the obtained first model to infer the current sampling scheme based on inputting context and/or pre-exposure data associated with the one or more current substrate.

公开(公告)号：US20220413391A1

公开(公告)日：2022-12-29

申请号：US17777348

申请日：2020-10-15

Applicant: ASML NETHERLANDS B.V.

Inventor： Michel Alphons Theodorus VAN HINSBERG ,  James Robert DOWNES ,  Erwin Josef Maria VERDURMEN ,  Jacob Fredrik Friso KLINKHAMER ,  Roy WERKMAN ,  Jochem Sebastiaan WILDENBERG ,  Adam Jan URBANCZYK ,  Lucas Jan Joppe VISSER

IPC: G03F7/20

Abstract: A method for determining an input to a lens model to determine a setpoint for manipulation of a lens of a lithographic apparatus when addressing at least one of a plurality of fields of a substrate, the method including: receiving parameter data for the at least one field, the parameter data relating to one or more parameters of the substrate within the at least one field, the one or more parameters being at least partially sensitive to manipulation of the lens as part of an exposure performed by the lithographic apparatus; receiving lens model data relating to the lens; and determining the input based on the parameter data and on the lens model data.

公开(公告)号：US20210405544A1

公开(公告)日：2021-12-30

申请号：US17289290

申请日：2019-09-26

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Lydia Marianna VERGAIJ-HUIZER

IPC: G03F7/20 ,  G06N3/04 ,  G06N3/08 ,  G06K9/62

Abstract: A method for obtaining a training data set including synthetic metrology data, the training data set being configured for training of a model relating to a manufacturing process for manufacturing an integrated circuit. The method includes obtaining behavioral property data describing a behavior of a process parameter resultant from the manufacturing process and/or a related tool or effect. Additionally, or alternatively metrology data performed on a structure formed by the manufacturing process and/or a similar manufacturing process may be obtained. Using the behavioral property data and/or metrology data, synthetic metrology data is determined, which describes the effect of variations in the manufacturing process, and/or a related tool or effect on the process parameter. The model is trained using the training data set including the synthetic metrology data.

公开(公告)号：US20230333485A1

公开(公告)日：2023-10-19

申请号：US18025183

申请日：2021-09-27

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Roy WERKMAN ,  David Frans Simon DECKERS

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70683

Abstract: A substrate including a target structure formed in at least two layers. The target structure includes a first region having periodically repeating features in each of the layers measureable using optical metrology; and a second region having repetitions of one or more product features in each of the layers, the repetitions being sufficient for stochastic analysis to determine at least one local variation metric. The method also includes determining a correction for control of a lithographic process based on measurement of such a target structure.

公开(公告)号：US20230168594A1

公开(公告)日：2023-06-01

申请号：US17920014

申请日：2021-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Wim Tjibbo TEL ,  Hermanus Adrianus DILLEN ,  Marc Jurian KEA ,  Roy WERKMAN ,  Weitian KOU

IPC: G03F9/00

CPC classification number: G03F9/7023 ,  G03F9/7088

Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.

公开(公告)号：US20220291593A1

公开(公告)日：2022-09-15

申请号：US17639364

申请日：2020-08-05

Applicant: ASML NETHERLANDS B.V.

Inventor： Roy WERKMAN ,  Pui Leng LAM ,  Blandine Marie Andree Richit MINGHETTI ,  Vahid BASTANI ,  Mohamadrezh HAJIAHMADI ,  Lydia Marianna VERGAIJ-HUIZER ,  Frans Reinier SPIERING

IPC: G03F7/20 ,  G03F1/42

Abstract: A method for characterizing a patterning process, the method including obtaining a plurality of values of stitching errors made along one or more boundaries between at least two patterned adjacent fields or sub-fields on a substrate; and fitting, using a hardware computer system, a distortion model to the plurality of values to obtain a fingerprint representing deformation of a field or sub-field out of the at least two patterned adjacent fields or sub-fields.

公开(公告)号：US20220260920A1

公开(公告)日：2022-08-18

申请号：US17612601

申请日：2020-05-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Pieter Gerardus Jacobus SMORENBERG ,  Putra SAPUTRA ,  Khalid ELBATTAY ,  Paul DERWIN ,  Roy WERKMAN ,  Erik JENSEN ,  Hyunwoo YU ,  Gautam SARMA

IPC: G03F7/20

Abstract: A method for determining a sampling scheme, the method including: obtaining a first fingerprint model relating to a first spatial distribution of a performance parameter over a first portion of a semiconductor substrate and a second fingerprint model relating to a second spatial distribution of the performance parameter over a second portion of the semiconductor substrate; and determining a sampling point corresponding to a measuring location on the semiconductor substrate for generating measurement data based on an expected reduction of a first uncertainty metric associated with evaluation of the first fingerprint model over the first portion and an expected reduction of a second uncertainty metric associated with evaluation of the second fingerprint model over the second portion.