APPARATUS AND METHOD FOR SUPPRESSING DYNAMIC PRESSURE INSTABILITY IN BLEED DUCT
    41.
    发明申请
    APPARATUS AND METHOD FOR SUPPRESSING DYNAMIC PRESSURE INSTABILITY IN BLEED DUCT 有权
    用于抑制动物粪便动态压力不稳定性的装置和方法

    公开(公告)号:US20090094989A1

    公开(公告)日:2009-04-16

    申请号:US11846220

    申请日:2007-08-28

    IPC分类号: F02C9/18 F02C7/24

    摘要: An apparatus and method for suppressing dynamic instability in a bleed duct of a gas turbine engine includes a fan bypass duct configured to permit a flow of air through the gas turbine engine. The fan bypass duct defines a fan duct surface, and the bleed duct has an inlet in fluid communication with the fan bypass duct and a flow control valve having an opened position and a closed position. A flow diverter is positioned on the fan duct surface proximate the inlet of the bleed duct and diverts the flow of air from the inlet when the flow control valve is closed, while permitting a portion of the flow of air to enter the inlet when the flow control valve is opened.

    摘要翻译: 一种用于抑制燃气涡轮发动机的排放管道中的动态不稳定性的装置和方法,包括:风扇旁通管道,其构造成允许空气流过燃气涡轮发动机。 风扇旁路管道限定了风扇管道表面,并且排放管道具有与风扇旁路管道流体连通的入口和具有打开位置和关闭位置的流量控制阀。 流量分配器位于靠近排放管道的入口的风扇管道表面上,并且当流量控制阀关闭时将空气流从入口转向,同时当流动的一部分空气进入入口时 控制阀打开。

    SEALING ARRANGEMENTS FOR GAS TURBINE ENGINE THRUST REVERSER
    42.
    发明申请
    SEALING ARRANGEMENTS FOR GAS TURBINE ENGINE THRUST REVERSER 有权
    燃气轮机发动机的密封装置

    公开(公告)号:US20080271432A1

    公开(公告)日:2008-11-06

    申请号:US11870484

    申请日:2007-10-11

    IPC分类号: F02K3/02

    CPC分类号: F02K1/72 Y02T50/672

    摘要: A transcowl for a gas turbine engine thrust reverser includes an arcuate outer wall; an arcuate inner wall; and an arcuate baffle positioned between the inner and outer walls at a forward end of the transcowl. The baffle has an arcuate cross-sectional shape which defines a forward-facing interior area. An arcuate forward seal is carried at a forward end of the inner wall. The forward seal includes a plurality of axially-extending, spaced-apart arcuate seal teeth which collectively define a labyrinth seal.

    摘要翻译: 用于燃气涡轮发动机推力反向器的转子包括弓形外壁; 弧形内墙; 以及位于转子组织前端的内壁和外壁之间的弧形挡板。 挡板具有限定前向内部区域的弓形横截面形状。 在内壁的前端承载有弧形的正向密封。 正向密封件包括多个轴向延伸的间隔开的弧形密封齿,其共同限定迷宫式密封。

    Sinuous chevron exhaust nozzle
    44.
    发明授权
    Sinuous chevron exhaust nozzle 有权
    蜿蜒斜纹排气喷嘴

    公开(公告)号:US07305817B2

    公开(公告)日:2007-12-11

    申请号:US10774963

    申请日:2004-02-09

    IPC分类号: F02K1/38

    摘要: A gas turbine engine exhaust nozzle includes a row of laterally sinuous chevrons extending from an aft end of an exhaust duct. The chevrons have radially outer and inner surfaces bound by a laterally sinuous trailing edge extending between a base of the chevrons adjoining the duct and an axially opposite apex of the chevrons. Each chevron has a compound arcuate contour both axially and laterally, and the sinuous trailing edge of the chevrons further compounds the arcuate configuration of each chevron.

    摘要翻译: 燃气涡轮发动机排气喷嘴包括从排气管的后端延伸的一排横向弯曲的人字形。 人字纹具有径向外表面和内表面,该表面由横向弯曲的后缘限定,该后缘在邻接管道的人字形的基部与人字纹的轴向相对的顶点之间延伸。 每个人字纹都具有轴向和横向的复合弧形轮廓,并且人字纹的弯曲后缘进一步复合了每个人字形的弧形构造。

    METHODS AND APPARATUS FOR DETERMINING THE THICKNESS OF A CONDUCTIVE LAYER ON A SUBSTRATE
    45.
    发明申请
    METHODS AND APPARATUS FOR DETERMINING THE THICKNESS OF A CONDUCTIVE LAYER ON A SUBSTRATE 有权
    用于确定基板上导电层厚度的方法和装置

    公开(公告)号:US20070205765A1

    公开(公告)日:2007-09-06

    申请号:US11172017

    申请日:2005-06-29

    申请人: Andrew Bailey

    发明人: Andrew Bailey

    IPC分类号: G01B7/06

    摘要: “A method of determining the thickness of a conductive film is disclosed. The method employs measured voltage and current responses that have been temperature-compensated to determine the thickness of the conductive film. The temperature compensation uses a temperature compensation factor obtained from a calibration substrate different from the target substrate on which the conductive film being measured is disposed. The calibration substrate has a conductive film formed of a conductive material that is substantially similar to the conductive material of the target substrate.”

    摘要翻译: “公开了一种确定导电膜厚度的方法,该方法采用经过温度补偿的测量电压和电流响应来确定导电膜的厚度,温度补偿使用从校准基板获得的温度补偿系数 不同于其上设置有测量导电膜的目标基板,校准基板具有由与目标基板的导电材料基本相似的导电材料形成的导电膜。

    Apparatus and methods to remove films on bevel edge and backside of wafer
    46.
    发明申请
    Apparatus and methods to remove films on bevel edge and backside of wafer 有权
    在晶圆的斜边缘和背面去除薄膜的装置和方法

    公开(公告)号:US20070068900A1

    公开(公告)日:2007-03-29

    申请号:US11440561

    申请日:2006-05-24

    IPC分类号: C23F1/00

    摘要: Improved mechanisms of removal of etch byproducts, dielectric films and metal films near the substrate bevel edge, and etch byproducts on substrate backside and chamber interior is provided to avoid the accumulation of polymer byproduct and deposited films and to improve process yield. An exemplary plasma etch processing chamber configured to clean a bevel edge of a substrate is provided. The chamber includes a bottom edge electrode surrounding a substrate support in the plasma processing chamber, wherein the substrate support is configured to receive the substrate and the bottom edge electrode and the substrate support are electrically isolated from each other by a bottom dielectric ring. The chamber also includes a top edge electrode surrounding a gas distribution plate opposing the substrate support, wherein the top edge electrode and the gas distribution plate are electrically isolated from each other by a top dielectric ring, and the top edge electrode and the bottom edge electrode are configured to generate a cleaning plasma to clean the bevel edge of the substrate.

    摘要翻译: 提供了去除蚀刻副产物,电介质膜和金属薄膜附近基板斜边缘的改进机理,以及衬底背面和腔室内部的蚀刻副产物,以避免聚合物副产物和沉积膜的堆积并提高工艺产率。 提供了一种构造成清洁衬底的斜边缘的示例性等离子体蚀刻处理室。 所述腔室包括围绕所述等离子体处理室中的衬底支撑件的底部边缘电极,其中所述衬底支撑件构造成接收所述衬底,并且所述底部边缘电极和所述衬底支撑件通过底部电介质环彼此电隔离。 该室还包括围绕与衬底支撑件相对的气体分配板的顶部边缘电极,其中顶部边缘电极和气体分配板通过顶部介电环彼此电隔离,并且顶部边缘电极和底部边缘电极 被配置为产生清洁等离子体以清洁基板的斜边缘。

    Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor
    47.
    发明申请
    Apparatus for the removal of a set of byproducts from a substrate edge and methods therefor 审中-公开
    用于从基板边缘去除一组副产品的设备及其方法

    公开(公告)号:US20070068623A1

    公开(公告)日:2007-03-29

    申请号:US11237327

    申请日:2005-09-27

    IPC分类号: C23F1/00 H01L21/306

    摘要: A plasma processing system including a plasma chamber for processing a substrate is disclosed. The apparatus includes a chuck configured for supporting a first surface of the substrate. The apparatus also includes a plasma resistant barrier disposed in a spaced-apart relationship with respect to a second surface of the substrate, the second surface being opposite the first surface, the plasma resistant barrier substantially shielding a center portion of the substrate and leaving an annular periphery area of the second surface of the substrate substantially unshielded by the plasma resistant barrier. The apparatus further includes at least one powered electrode, the powered electrode operating cooperatively with the plasma resistant barrier to generate confined plasma from a plasma gas, the confined plasma being substantially confined to the annular periphery portion of the substrate and away from the center portion of the substrate.

    摘要翻译: 公开了一种包括用于处理衬底的等离子体室的等离子体处理系统。 该装置包括配置用于支撑基板的第一表面的卡盘。 该装置还包括等离子体阻挡屏障,其相对于衬底的第二表面以间隔开的关系设置,第二表面与第一表面相对,等离子体阻挡屏障基本上屏蔽衬底的中心部分并留下环形 衬底的第二表面的周边区域基本上不受等离子体阻挡屏障的屏蔽。 所述设备还包括至少一个动力电极,所述动力电极与所述等离子体阻挡屏障协同工作以从等离子体气体产生约束等离子体,所述受限等离子体基本上限制在所述衬底的环形周边部分并且远离所述衬底的中心部分 底物。

    METHODS AND APPARATUS FOR OPTIMIZING AN ELECTRICAL RESPONSE TO A SET OF CONDUCTIVE LAYERS ON A SUBSTRATE
    48.
    发明申请
    METHODS AND APPARATUS FOR OPTIMIZING AN ELECTRICAL RESPONSE TO A SET OF CONDUCTIVE LAYERS ON A SUBSTRATE 有权
    用于优化对衬底上一组导电层的电气响应的方法和装置

    公开(公告)号:US20070001670A1

    公开(公告)日:2007-01-04

    申请号:US11173708

    申请日:2005-06-30

    申请人: Andrew Bailey

    发明人: Andrew Bailey

    IPC分类号: G01B7/06

    CPC分类号: G01B7/105

    摘要: A method of determining a first thickness of a first conductive layer formed of a first conductive material on a target substrate, the target substrate further having a second conductive layer formed of a second conductive material different from the first conductive material, is disclosed. The method includes positioning a first eddy current sensor at a given position relative to the target substrate, the first eddy current sensor being in a spaced-apart relationship with respect to the target substrate when positioned at the given position. The method also includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the give position, a first set of electrical responses that includes at least one of a first voltage measurement and a first current measurement, the measuring the first set of electrical responses being performed at a first target substrate temperature. The method further includes measuring, using the first eddy current sensor while the first eddy current sensor is positioned at the given position, a second set of electrical responses that includes at least one of a second voltage measurement and a second current measurement, the measuring the second set of electrical responses being performed at a second target substrate temperature different from the first target substrate temperature. The method also includes calculating a third set of electrical responses using at least the first set of electrical responses and the second set of electrical responses, and a first temperature coefficient of the first conductive layer, the third set of electrical responses representing responses substantially attributable to the first conductive layer; and determining the first thickness from the third set of electrical responses.

    摘要翻译: 公开了一种确定由目标衬底上的第一导电材料形成的第一导电层的第一厚度的方法,所述目标衬底还具有由不同于所述第一导电材料的第二导电材料形成的第二导电层。 该方法包括将第一涡流传感器定位在相对于目标衬底的给定位置处,当定位在给定位置时,第一涡流传感器相对于目标衬底处于间隔开的关系。 该方法还包括在第一涡流传感器位于给定位置时测量使用第一涡流传感器的第一组电响应,其包括第一电压测量和第一电流测量中的至少一个,测量 在第一目标衬底温度下执行第一组电响应。 该方法还包括在第一涡流传感器位于给定位置时使用第一涡流传感器来测量包括第二电压测量和第二电流测量中的至少一个的第二组电响应, 在与第一目标衬底温度不同的第二目标衬底温度下执行第二组电响应。 该方法还包括使用至少第一组电响应和第二组电响应来计算第三组电响应,以及第一导电层的第一温度系数,第三组电响应表示基本归因于 第一导电层; 以及从所述第三组电响应确定所述第一厚度。

    Apparatus for servicing a plasma processing system with a robot
    49.
    发明申请
    Apparatus for servicing a plasma processing system with a robot 审中-公开
    用于用机器人维修等离子体处理系统的装置

    公开(公告)号:US20060218680A1

    公开(公告)日:2006-09-28

    申请号:US11092848

    申请日:2005-03-28

    申请人: Andrew Bailey

    发明人: Andrew Bailey

    IPC分类号: B25J18/00

    摘要: A robot apparatus for executing a set of service procedures on a plasma processing system including a docking port is disclosed. The apparatus includes a platform and a docking probe coupled to the platform, wherein the docking probe is configured to dock with the docking port. The apparatus also includes a robot arm coupled to the platform, and further configured to substantially perform the set of service procedures, and a tool coupled to the robot arm. The apparatus further includes a computer coupled to the platform, wherein the computer is further configured to execute the set of service procedures, and wherein when the docking probe is docked to the docking port, the set of service procedures is performed by the tool.

    摘要翻译: 公开了一种用于在包括对接端口的等离子体处理系统上执行一组服务程序的机器人装置。 该装置包括耦合到平台的平台和对接探针,其中对接探针配置成与对接端口对接。 该装置还包括联接到平台的机器人臂,并且还被配置为基本上执行该组服务程序,以及联接到机器人手臂的工具。 所述装置还包括耦合到所述平台的计算机,其中所述计算机还被配置为执行所述一组服务过程,并且其中当所述对接探针对接到所述对接端口时,所述一组服务过程由所述工具执行。

    Methods and arrangement for the reduction of byproduct deposition in a plasma processing system
    50.
    发明申请
    Methods and arrangement for the reduction of byproduct deposition in a plasma processing system 有权
    在等离子体处理系统中减少副产物沉积的方法和装置

    公开(公告)号:US20060130758A1

    公开(公告)日:2006-06-22

    申请号:US11022982

    申请日:2004-12-22

    IPC分类号: H05H1/24 C23C16/00

    摘要: In a plasma processing system, a method of reducing byproduct deposits on a set of plasma chamber surfaces of a plasma processing chamber is disclosed. The method includes providing a deposition barrier in the plasma processing chamber, the deposition barrier is configured to be disposed in a plasma generating region of the plasma processing chamber, thereby permitting at least some process byproducts produced when a plasma is struck within the plasma processing chamber to adhere to the deposition barrier and reducing the byproduct deposits on the set of plasma processing chamber surfaces.

    摘要翻译: 在等离子体处理系统中,公开了一种在等离子体处理室的一组等离子体室表面上减少副产物沉积的方法。 所述方法包括在所述等离子体处理室中设置沉积阻挡层,所述沉积阻挡层被配置为设置在所述等离子体处理室的等离子体产生区域中,从而允许在所述等离子体处理室内等离子体被击中时产生的至少一些过程副产物 以附着到沉积屏障上并减少等离子体处理室表面组上的副产物沉积物。