Robe hook
    42.
    外观设计
    Robe hook 有权
    长袍钩

    公开(公告)号:USD578780S1

    公开(公告)日:2008-10-21

    申请号:US29303783

    申请日:2008-02-18

    Applicant: Chia Ying Lee

    Designer: Chia Ying Lee

    METHOD FOR CREATING BOOKMARK AND ELECTRONIC READING DEVICE USING THE SAME
    48.
    发明申请
    METHOD FOR CREATING BOOKMARK AND ELECTRONIC READING DEVICE USING THE SAME 审中-公开
    用于创建书签和使用该书签的电子阅读装置的方法

    公开(公告)号:US20120290964A1

    公开(公告)日:2012-11-15

    申请号:US13292053

    申请日:2011-11-08

    CPC classification number: G06F3/0483 G06F3/0488 G06F15/0291

    Abstract: A method for creating a bookmark is used in an electronic reading device having a display module. The method for creating a bookmark includes the following steps. A first page image is displayed at the display module, and a corner of the first page image has a first pattern with a raised corner. A selection command is received. The first pattern is changed to a second pattern with a turned down corner. This invention can easily catch a user's eyes, further allowing the user to execute the bookmark function of the electronic reading device.

    Abstract translation: 在具有显示模块的电子阅读装置中使用了创建书签的方法。 创建书签的方法包括以下步骤。 第一页图像显示在显示模块处,并且第一页图像的角部具有带凸起角的第一图案。 接收到选择命令。 第一个模式改为具有转角的第二个模式。 本发明可以容易地捕捉用户的眼睛,进一步允许用户执行电子阅读设备的书签功能。

    Gate controlled field emission triode and process for fabricating the same
    49.
    发明授权
    Gate controlled field emission triode and process for fabricating the same 有权
    门控场发射三极管及其制造方法

    公开(公告)号:US08267734B2

    公开(公告)日:2012-09-18

    申请号:US12386161

    申请日:2009-04-14

    CPC classification number: H01J9/025 H01J1/304 H01J2201/30446

    Abstract: This invention relates to a process for fabricating ZnO nanowires with high aspect ratio at low temperature, which is associated with semiconductor manufacturing process and a gate controlled field emission triode is obtained. The process comprises providing a semiconductor substrate, depositing a dielectric layer and a conducting layer, respectively, on the semiconductor substrate, defining the positions of emitter arrays on the dielectric layer and conducting layer, depositing an ultra thin ZnO film as a seeding layer on the substrate, growing the ZnO nanowires as the emitter arrays by using hydrothermal process, and etching the areas excluding the emitter arrays, then obtaining the gate controlled field emission triode.

    Abstract translation: 本发明涉及一种用于制造低温下具有高纵横比的ZnO纳米线的方法,其与半导体制造工艺相关,并且获得了栅极控制的场致发射三极管。 该方法包括提供半导体衬底,分别在半导体衬底上沉积电介质层和导电层,限定电介质层和导电层上的发射极阵列的位置,将沉积超薄ZnO膜作为接种层 衬底,通过使用水热法生长ZnO纳米线作为发射极阵列,并蚀刻除发射极阵列之外的区域,然后获得栅极控制的场致发射三极管。

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