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    Aromatic amic acids or amic esters and compositions
    41.
    发明授权
    Aromatic amic acids or amic esters and compositions 有权
    芳族酰胺酸或酰胺酸酯和组合物

    公开(公告)号：US08314265B2

    公开(公告)日：2012-11-20

    申请号：US12770803

    申请日：2010-04-30

    Applicant: Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    IPC: C07C229/34

    CPC classification number: C07C233/65 ,  C07C233/66 ,  C07D221/14 ,  C07D401/12 ,  C07D471/06

    Abstract: Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester.

    Abstract translation: 新型的酰胺酸和酰胺酸可以热转化为相应的亚芳基二酰亚胺。 这些酰胺酸和酰胺酸可用作制备半导体薄膜的前体，该半导体薄膜可用于各种制品中，包括可并入各种电子器件中的薄膜晶体管器件。 以这种方式，亚芳基二酰亚胺不需要从它们可能不溶的溶剂中被涂覆，但是它们可以由溶剂可溶的易包覆的酰胺酸或酰胺酯原位产生。

    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors
    43.
    发明授权
    Aryl dicarboxylic acid diimidazole-based compounds as n-type semiconductor materials for thin film transistors 有权
    作为用于薄膜晶体管的n型半导体材料的芳基二羧酸二咪唑类化合物

    公开(公告)号：US08187915B2

    公开(公告)日：2012-05-29

    申请号：US12731191

    申请日：2010-03-25

    Applicant: Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    Inventor： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

    Abstract translation: 制造薄膜半导体器件的方法包括以下步骤，但不一定按照所述顺序。 首先，将有机半导体材料的薄膜沉积在基板上。 这种有机半导体材料薄膜包括有机半导体材料，其包括一种或多种权利要求1的芳基二甲基二咪唑基化合物，使得该膜表现出大于0.005cm 2 / Vs的场效应电子迁移率。 然后，该工艺包括形成间隔开的源电极和漏电极，其中源极电极和漏极电极与n沟道半导体膜分离并与其电连接。 然后形成与半导体材料间隔开的栅电极。 可以将一个或多个薄膜半导体器件（或晶体管）并入电子器件中。

    METHODS OF PROVIDING SEMICONDUCTOR LAYERS FROM AMIC ACID SALTS
    44.
    发明申请
    METHODS OF PROVIDING SEMICONDUCTOR LAYERS FROM AMIC ACID SALTS 有权
    从AMIC酸提供半导体层的方法

    公开(公告)号：US20110294257A1

    公开(公告)日：2011-12-01

    申请号：US12788349

    申请日：2010-05-27

    Applicant: Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    IPC: H01L51/30 ,  B05D5/12 ,  H01L51/40

    CPC classification number: H01L51/0027 ,  C09B57/001 ,  C09B57/08 ,  H01L51/0026 ,  H01L51/005 ,  H01L51/0053 ,  H01L51/0541 ,  H01L51/0545

    Abstract: A semiconductor layer and device can be provided using a method including thermally converting an aromatic, non-polymeric amic acid salt to a corresponding arylene diimide. The semiconducting thin films can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimide need not be coated but is generated in situ from a solvent-soluble, easily coated aromatic, non-polymeric amic acid salt at relatively lower temperature because the cation portion of the salt acts as an internal catalyst.

    Abstract translation: 可以使用包括将芳族非聚合酰胺酸盐热转化成相应的亚芳基二酰亚胺的方法来提供半导体层和装置。 半导体薄膜可用于各种制品中，包括可并入各种电子器件中的薄膜晶体管器件。 以这种方式，亚芳基二酰亚胺不需要被涂覆，而是在相对较低的温度下由溶剂可溶的容易涂覆的芳族非聚合酰胺酸盐原位产生，因为盐的阳离子部分作为内部催化剂。

    AROMATIC AMIC ACIDS OR AMIC ESTERS AND COMPOSITIONS
    45.
    发明申请
    AROMATIC AMIC ACIDS OR AMIC ESTERS AND COMPOSITIONS 有权
    芳香族酸或酸性酯及其组合物

    公开(公告)号：US20110269967A1

    公开(公告)日：2011-11-03

    申请号：US12770803

    申请日：2010-04-30

    Applicant: Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Dianne M. Meyer ,  Wendy G. Ahearn

    IPC: C07D221/06 ,  C07C229/40 ,  C07D401/12

    CPC classification number: C07C233/65 ,  C07C233/66 ,  C07D221/14 ,  C07D401/12 ,  C07D471/06

    Abstract: Novel amic acids and amic esters can be thermally converted into corresponding arylene diimides. These amic acids and amic ester can be used as precursors to prepare semiconducting thin films that can be used in various articles including thin-film transistor devices that can be incorporated into a variety of electronic devices. In this manner, the arylene diimides need not be coated out of solvent in which they may be insoluble, but they can be generated in situ from a solvent-soluble, easily coated amic acid or amic ester.

    Abstract translation: 新型的酰胺酸和酰胺酸可以热转化为相应的亚芳基二酰亚胺。 这些酰胺酸和酰胺酸可用作制备半导体薄膜的前体，该半导体薄膜可用于各种制品中，包括可并入各种电子器件中的薄膜晶体管器件。 以这种方式，亚芳基二酰亚胺不需要从它们可能不溶的溶剂中被涂覆，但是它们可以由溶剂可溶的易包覆的酰胺酸或酰胺酯原位产生。

    METHOD OF MAKING N-TYPE SEMICONDUCTOR DEVICES
    46.
    发明申请
    METHOD OF MAKING N-TYPE SEMICONDUCTOR DEVICES 有权
    制造N型半导体器件的方法

    公开(公告)号：US20110183462A1

    公开(公告)日：2011-07-28

    申请号：US12691802

    申请日：2010-01-22

    Applicant: Deepak Shukla ,  Dianne M. Meyer

    Inventor： Deepak Shukla ,  Dianne M. Meyer

    IPC: H01L51/56

    CPC classification number: H01L51/0053 ,  C09B57/08 ,  H01L51/0541 ,  H01L51/0545

    Abstract: An organic semiconducting composition consists essentially of an N,N-dicycloalkyl-substituted naphthalene diimide and a polymer additive comprising an insulating or semiconducting polymer having a permittivity at 1000 Hz of at least 1.5 and up to and including 5. This composition can be used to provide a semiconducting layer in a thin-film transistor that can be incorporated into a variety of electronic devices.

    Abstract translation: 有机半导体组合物基本上由N，N-二环烷基取代的萘二酰亚胺和包含绝缘或半导体聚合物的聚合物添加剂组成，其绝缘或半导体聚合物在1000Hz下的介电常数至少为1.5且至多并包括5.该组合物可用于 在可以结合到各种电子器件中的薄膜晶体管中提供半导体层。

    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    47.
    发明申请
    ARYL DICARBOXYLIC ACID DIIMIDAZOLE-BASED COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为薄膜晶体管的N型半导体材料的ARYL DICARBOXYLIC ACID DIIMIDAZOLE-based COMPOUNDS

    公开(公告)号：US20100178728A1

    公开(公告)日：2010-07-15

    申请号：US12731191

    申请日：2010-03-25

    Applicant: Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    Inventor： Shiying Zheng ,  Deepak Shukla ,  Diane C. Freeman

    IPC: H01L51/40

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  C09B57/08 ,  H01L51/0545 ,  H01L51/0558 ,  Y02E10/549

    Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.

    Abstract translation: 制造薄膜半导体器件的方法包括以下步骤，但不一定按照所述顺序。 首先，将有机半导体材料的薄膜沉积在基板上。 这种有机半导体材料薄膜包括有机半导体材料，其包括一种或多种权利要求1的芳基二甲基二咪唑基化合物，使得该膜表现出大于0.005cm 2 / Vs的场效应电子迁移率。 然后，该工艺包括形成间隔开的源电极和漏电极，其中源极电极和漏极电极与n沟道半导体膜分离并与其电连接。 然后形成与半导体材料间隔开的栅电极。 可以将一个或多个薄膜半导体器件（或晶体管）并入电子器件中。

    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS
    48.
    发明申请
    CONFIGURATIONALLY CONTROLLED N,N'-DICYCLOALKYL-SUBSTITUTED NAPHTHALENE-BASED TETRACARBOXYLIC DIIMIDE COMPOUNDS AS N-TYPE SEMICONDUCTOR MATERIALS FOR THIN FILM TRANSISTORS 有权
    作为N型半导体薄膜薄膜晶体管的配置控制N，N'-二烷基取代的基于萘二甲酸的四嵌段二胺二异氰酸酯化合物

    公开(公告)号：US20080135833A1

    公开(公告)日：2008-06-12

    申请号：US11567954

    申请日：2006-12-07

    Applicant: Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    Inventor： Deepak Shukla ,  Thomas R. Welter ,  Jeffrey T. Carey ,  Manju Rajeswaran ,  Wendy G. Ahearn

    IPC: H01L51/40 ,  C07D471/22

    CPC classification number: H01L51/0053 ,  C09B5/62 ,  H01L51/0541 ,  H01L51/0545 ,  Y02E10/549

    Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a configurationally controlled N,N′-dicycloalkyl-substituted naphthalene-1,4,5,8-bis-carboximide compound having a substituted or unsubstituted alicyclic ring independently attached to each imide nitrogen atom with the proviso that at least one of the two alicyclic rings is necessarily a 4-substituted cyclohexyl ring in which a substituent at the 4-position is the sole substituent on the 4-substituted cyclohexyl ring other than the imide attachment; with such substituent being stereochemically disposed as only one of either an essentially trans or cis position, respectively, to the imide nitrogen substituent. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

    Abstract translation: 薄膜晶体管包括一层有机半导体材料，其包含构型受控的N，N'-二环烷基取代的萘-1,4,5,8-双 - 二甲酰亚胺化合物，其具有独立地连接到每个酰亚胺氮上的取代或未取代的脂环基 原子，条件是两个脂环中的至少一个必须是4-取代的环己基环，其中4位上的取代基是4-取代的环己基环以外的唯一取代基，而不是酰亚胺键; 其中这些取代基被立体化学地分别置于酰亚胺氮取代基中基本上为反式或顺式位置之一。 这种晶体管还可以包括与所述材料接触的间隔开的第一和第二接触装置或电极。 进一步公开了一种用于制造有机薄膜晶体管器件的方法，优选通过升华沉积到衬底上，其中衬底温度不超过100℃。

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