公开(公告)号：US20120208875A1

公开(公告)日：2012-08-16

申请号：US13112220

申请日：2011-05-20

Applicant: Shinn-Zong LIN ,  Jyh-Harn Horng ,  Tzyy-Wen Chiou ,  Li-Fu Chang

Inventor： Shinn-Zong LIN ,  Jyh-Harn Horng ,  Tzyy-Wen Chiou ,  Li-Fu Chang

IPC: A61K31/365 ,  A61P9/10 ,  A61P9/00

CPC classification number: A61K31/365

Abstract: Provided is a method for inhibiting blood vessel stenosis in a subject, comprising administrating to the subject an effective amount of an active ingredient selected from a group consisting of a compound of formula (I), a pharmaceutically acceptable salt of the compound, a pharmaceutically acceptable ester of the compound, and combinations thereof. Also provided is a method for inhibiting blood vessel stenosis in a subject, comprising administration to the subject an effective amount of an Angelicae Sinensis extract comprising the compound of formula (I).

Abstract translation: 本发明提供一种抑制受试者血管狭窄的方法，其包括向所述受试者施用有效量的选自式（I）化合物，所述化合物的药学上可接受的盐，药学上可接受的盐 化合物的酯，及其组合。 还提供了抑制受试者血管狭窄的方法，其包括向受试者施用有效量的包含式（I）化合物的当归提取物。

公开(公告)号：US08233320B2

公开(公告)日：2012-07-31

申请号：US12829391

申请日：2010-07-02

Applicant: Peter Wung Lee ,  Fu-Chang Hsu

Inventor： Peter Wung Lee ,  Fu-Chang Hsu

IPC: G11C16/04

CPC classification number: G11C16/10 ,  G11C16/0425 ,  H01L27/11519 ,  H01L27/11521

Abstract: A two transistor NOR flash memory cell has symmetrical source and drain structure manufactured by a NAND-based manufacturing process. The flash cell comprises a storage transistor made of a double-poly NMOS floating gate transistor and an access transistor made of a double-poly NMOS floating gate transistor, a poly1 NMOS transistor with poly1 and poly2 being shorted or a single-poly poly1 or poly2 NMOS transistor. The flash cell is programmed and erased by using a Fowler-Nordheim channel tunneling scheme. A NAND-based flash memory device includes an array of the flash cells arranged with parallel bit lines and source lines that are perpendicular to word lines. Write-row-decoder and read-row-decoder are designed for the flash memory device to provide appropriate voltages for the flash memory array in pre-program with verify, erase with verify, program and read operations in the unit of page, block, sector or chip.

Abstract translation: 双晶体管NOR闪存单元具有由基于NAND的制造工艺制造的对称的源极和漏极结构。 闪存单元包括由双多晶硅NMOS浮栅晶体管构成的存储晶体管和由双多晶硅NMOS浮栅晶体管构成的存取晶体管，poly1和poly2短路的poly1NMOS晶体管或单聚poly1或poly2 NMOS晶体管。 使用Fowler-Nordheim通道隧道方案对闪存单元进行编程和擦除。 基于NAND的闪速存储器件包括与并行位线排列的闪存单元的阵列和垂直于字线的源极线。 写行解码器和读行解码器专为闪存器件而设计，可在预编程中为闪速存储器阵列提供适当的电压，通过验证，擦除，以页面，块为单位进行验证，编程和读取操作， 部门或芯片。

公开(公告)号：US20120176841A1

公开(公告)日：2012-07-12

申请号：US13347913

申请日：2012-01-11

Applicant: Peter Wung Lee ,  Fu-Chang Hsu

Inventor： Peter Wung Lee ,  Fu-Chang Hsu

IPC: G11C16/04

CPC classification number: G11C16/0483 ,  G11C16/0441 ,  G11C16/10

Abstract: A novel NVM-based 2T or 2nT NAND-cell for a NAND-array for PLD, PAL and matching functions is disclosed. The preferable NVM cell can be ROM or Flash. The 2T flash cell preferably uses FN for both program and erase operation, while 2T ROM cell preferably to use phosphorus for ROM code implant to get negative Vt0.

Abstract translation: 公开了一种用于PLD，PAL和匹配功能的NAND阵列的基于NVM的2T或2nT NAND单元。 优选的NVM单元可以是ROM或Flash。 2T闪存单元优选地使用FN进行编程和擦除操作，而2T ROM单元优选地将磷用于ROM代码注入来获得负Vt0。

公开(公告)号：US20120169656A1

公开(公告)日：2012-07-05

申请号：US13305366

申请日：2011-11-28

Applicant: CHIN-FU CHANG

Inventor： CHIN-FU CHANG

IPC: G06F3/044

CPC classification number: G06F3/044 ,  G06F3/0416 ,  G06F3/0418 ,  G06F2203/04103 ,  G06F2203/04104 ,  G06F2203/04107 ,  G06F2203/04111

Abstract: The present invention provides a mutual capacitive multi-touch screen, which includes a guarding pattern and a conductive strip pattern exposed from each other. The conductive strip pattern includes a plurality of first conductive strips provided with a driving signal and a plurality of second conductive strips for providing mutual capacitive coupling signals, and the guarding pattern is provided with a DC signal. The guarding pattern allows that, when a touch range of each external conductive object is larger than a predetermined condition, capacitive coupling between each external conductive object and the guarding pattern or capacitive coupling between each external conductive object and the first conductive strips and the guarding pattern is greater than capacitive coupling between each external conductive object and the second conductive strips.

公开(公告)号：US20120169652A1

公开(公告)日：2012-07-05

申请号：US13211873

申请日：2011-08-17

Applicant: CHIN-FU CHANG

Inventor： CHIN-FU CHANG

IPC: G06F3/045

CPC classification number: G06F3/044 ,  G06F3/0416 ,  G06F3/0418 ,  G06F2203/04103 ,  G06F2203/04104 ,  G06F2203/04107 ,  G06F2203/04111

Abstract: The present invention provides a mutual capacitive multi-touch screen, which includes a guarding pattern and a conductive strip pattern exposed from each other. The conductive strip pattern includes a plurality of first conductive strips provided with a driving signal and a plurality of second conductive strips for providing mutual capacitive coupling signals, and the guarding pattern is provided with a DC signal.

Abstract translation: 本发明提供了一种互电容式多点触摸屏，其包括彼此暴露的保护图案和导电条图案。 导电条图形包括多个带有驱动信号的第一导电条和用于提供相互电容耦合信号的多个第二导电条，并且保护图案具有DC信号。

公开(公告)号：US08168207B2

公开(公告)日：2012-05-01

申请号：US12259782

申请日：2008-10-28

Applicant: Yung-Fu Chang ,  Raghavan U. M. Palaniappan

Inventor： Yung-Fu Chang ,  Raghavan U. M. Palaniappan

IPC: A61K39/002

CPC classification number: G01N33/56911 ,  A61K39/00 ,  C07K14/20 ,  G01N2333/20 ,  G01N2469/10 ,  G01N2469/20 ,  Y02A50/48 ,  Y02A50/56

Abstract: The invention provides novel immunogenic proteins LigA and LigB from Leptospira for use in the development of effective vaccines and antibodies, as well as improved diagnostic methods and kits.

Abstract translation: 本发明提供了来自钩端螺旋体的新型免疫原性蛋白LigA和LigB，用于开发有效的疫苗和抗体，以及改进的诊断方法和试剂盒。

公开(公告)号：US20120100143A1

公开(公告)日：2012-04-26

申请号：US12679643

申请日：2008-09-22

Applicant: Yung-Fu Chang

Inventor： Yung-Fu Chang

IPC: A61K39/40 ,  C07K16/12 ,  A61P31/04 ,  A61P37/04 ,  A61P15/00 ,  C12N15/63 ,  C12P21/02 ,  G01N33/569 ,  A61K39/02 ,  A61P1/16

CPC classification number: C07K14/20 ,  A61K39/0225 ,  A61K2039/53 ,  Y02A50/48

Abstract: Leptospira outer membrane proteins (OMPs) LP1454, LP1118, LP1939, MCEII, CADF-like1, CADF-like2, CADF-like3, Lp0022, Lp1499, Lp4337, Lp328 or L21 are provided. The OMPS can be used as tools for developing effective vaccines or diagnostic methods for leptospirosis. Expression vectors for the OMP genes are further provided. The antigenic properties of the Leptospira OMPs can be used to create, manufacture or improve vaccines. Vaccines, including but not limited to DNA vaccines, recombinant vaccines, and T-cell epitope vaccines based on the foregoing OMPs are also provided. Methods for producing such vaccines are also provided. Also provided are methods for using Leptospira OMP genes, proteins and antibodies for therapeutic treatment and serological diagnosis techniques.

Abstract translation: 提供了钩端螺旋体外膜蛋白（OMP）LP1454，LP1118，LP1939，MCEII，CADF-like1，CADF-like2，CADF-like3，Lp0022，Lp1499，Lp4337，Lp328或L21。 OMPS可用作开发有效疫苗或钩端螺旋体病诊断方法的工具。 进一步提供OMP基因的表达载体。 钩端螺旋体OMP的抗原性质可用于制造，制造或改进疫苗。 还提供了疫苗，包括但不限于DNA疫苗，重组疫苗和基于前述OMP的T细胞表位疫苗。 还提供了生产这种疫苗的方法。 还提供了使用钩端螺旋体OMP基因，蛋白质和抗体进行治疗和血清学诊断技术的方法。

公开(公告)号：US08159557B2

公开(公告)日：2012-04-17

申请号：US12236492

申请日：2008-09-23

Applicant: Yuan-Che Lee ,  Jhy-Jyi Sze ,  Chiao-Fu Chang ,  Tsung-Chien Wu

Inventor： Yuan-Che Lee ,  Jhy-Jyi Sze ,  Chiao-Fu Chang ,  Tsung-Chien Wu

IPC: H04N5/235

CPC classification number: H04N5/365 ,  H04N5/243

Abstract: A method of generating a gain of an image frame according to a look up table of gain which is set up based on luminance sensitivity of human eyes is proposed. The method includes setting a gain of an image frame to 1, scanning images of a plurality of front rows of the image frame, averaging the images of the plurality of the front rows of the image frame to generate an average value of the images of the plurality of the front rows of the image frame, finding a gain from the look up table of gain according to the average value of the images of the plurality of the front rows of the image frame, and adjusting remaining rows of the image frame according to the gain to generate images of the remaining rows of the image frame.

Abstract translation: 提出了根据基于人眼的亮度灵敏度设置的增益查找表生成图像帧的增益的方法。 该方法包括将图像帧的增益设置为1，扫描图像帧的多个前排的图像，对图像帧的多个前行的图像进行平均，以生成图像的图像的平均值 多个图像帧的前排，根据图像帧的多个前排的图像的平均值，从增益的查找表中找到增益，并根据图像帧的剩余行调整 生成图像帧的剩余行的图像的增益。

公开(公告)号：US20120075247A1

公开(公告)日：2012-03-29

申请号：US13308673

申请日：2011-12-01

Applicant: CHIN-FU CHANG ,  Cheng-Han Lee ,  Chi-Hao Tang ,  Shun-Lung Ho

Inventor： CHIN-FU CHANG ,  Cheng-Han Lee ,  Chi-Hao Tang ,  Shun-Lung Ho

IPC: G06F3/044 ,  G06F3/041

CPC classification number: G01R27/2605 ,  G06F3/03545 ,  G06F3/0416 ,  G06F3/0418 ,  G06F3/044 ,  G06F3/047

Abstract: A method and device for analyzing positions are disclosed. In sensing information, at least one position is determined according to a first characteristic of a touch related sensing information. The sensing information also has a touch related sensing information with a second characteristic, which is opposite to the first characteristic. The touch related sensing information with the second characteristic is neglected or filtered. In addition, another method and device for analyzing positions are disclosed. An AC signal is provided through a pen, and a first characteristic of a touch related sensing information corresponding to a finger is opposite to the second characteristic of the touch related sensing information corresponding to the pen. The first characteristic and the second characteristic can be used to distinguish the touch of the finger from the touch of the pen or for palm rejection.

公开(公告)号：US20120069651A1

公开(公告)日：2012-03-22

申请号：US13200142

申请日：2011-09-19

Applicant: Peter Wung Lee ,  Fu-Chang Hsu

Inventor： Peter Wung Lee ,  Fu-Chang Hsu

IPC: G11C16/10 ,  G11C16/06 ,  H01L21/336 ,  H01L29/788

CPC classification number: G11C16/0416 ,  G11C16/10 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/7883

Abstract: A nonvolatile memory device has a combination of FLOTOX EEPROM nonvolatile memory arrays. Each FLOTOX-based nonvolatile memory array is formed of FLOTOX-based nonvolatile memory cells that include at least one floating gate tunneling oxide transistor such that a coupling ratio of the control gate to the floating gate of the floating gate tunneling oxide transistor is from approximately 60% to approximately 70% and a coupling ratio of the floating gate to the drain region of the floating gate tunneling oxide transistor is maintained as a constant of is from approximately 10% to approximately 20% and such that a channel length of the channel region is decreased such that during the programming procedure a negative programming voltage level is applied to the control gate and a moderate positive programming voltage level is applied to the drain region to prevent the moderate positive programming voltage level from exceeding a drain-to-source breakdown voltage.

Abstract translation: 非易失性存储器件具有FLOTOX EEPROM非易失性存储器阵列的组合。 每个基于FLOTOX的非易失性存储器阵列由基于FLOTOX的非易失性存储器单元形成，其包括至少一个浮置栅极隧穿氧化物晶体管，使得控制栅极与浮置栅极隧道氧化物晶体管的浮置栅极的耦合比率约为60 ％至约70％，并且将浮置栅极与漏极区域的浮动栅极氧化物晶体管的耦合比保持为约10％至约20％的常数，并且使得沟道区的沟道长度为 减小，使得在编程过程期间将负编程电压电平施加到控制栅极，并且向漏极区域施加中等的正编程电压电平，以防止中等正编程电压电平超过漏源至源极击穿电压。