公开(公告)号：US08288176B2

公开(公告)日：2012-10-16

申请号：US13239814

申请日：2011-09-22

Applicant: Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

Inventor： Andreas Meisel ,  Michael Burrows ,  Homer Antoniadis

IPC: H01L21/66

CPC classification number: H01L31/1804 ,  H01L22/12 ,  H01L31/022425 ,  Y02E10/547 ,  Y02P70/521

Abstract: The disclosure relates to a method of aligning a set of patterns on a substrate, which includes depositing on the substrate's surface a set of silicon nanoparticles, which includes a set of ligand molecules including a set of carbon atoms. The method involves forming a first set of regions where the nanoparticles are deposited, while the remaining portions of the substrate surface define a second set of regions. The method also includes densifying the set of nanoparticles into a thin film to form a set of silicon-organic zones on the substrate's surface, wherein the first and the second set of regions have respectively first and second reflectivity values, such that the ratio of the second reflectivity value to the first reflectivity value is greater than about 1.1.

Abstract translation: 本公开涉及一种在衬底上对准一组图案的方法，其包括在衬底表面上沉积一组硅纳米颗粒，其包括一组包含一组碳原子的配体分子。 该方法包括形成沉积纳米颗粒的第一组区域，而衬底表面的其余部分限定第二组区域。 该方法还包括将该组纳米颗粒致密化成薄膜以在基底表面上形成一组硅 - 有机区域，其中第一和第二组区域分别具有第一和第二反射率值，使得 第一反射率值的第二反射率值大于约1.1。

公开(公告)号：US20110091731A1

公开(公告)日：2011-04-21

申请号：US12967378

申请日：2010-12-14

Applicant: Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

Inventor： Maxim Kelman ,  Pingrong Yu ,  Manikandan Jayaraman ,  Dmitry Poplavskyy ,  David Jurbergs ,  Francesco Lemmi ,  Homer Antoniadis

IPC: B32B15/04 ,  H01B1/04 ,  H01B1/02 ,  B32B17/06 ,  H01L21/20

CPC classification number: H01L21/02422 ,  H01L21/02425 ,  H01L21/02532 ,  H01L21/02601 ,  H01L21/02628 ,  Y10T428/249954 ,  Y10T428/31678

Abstract: Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.

Abstract translation: 描述了使用IV族纳米颗粒的制剂由涂覆底物形成的原生IV族半导体薄膜。 这种本土IV族半导体薄膜利用了第IV族半导体材料的广泛的历史知识，同时利用了第IV族半导体纳米颗粒的优点，用于生产可容易地集成到多个器件中的新型薄膜。

公开(公告)号：US20110003466A1

公开(公告)日：2011-01-06

申请号：US12794188

申请日：2010-06-04

Applicant: Giuseppe Scardera ,  Homer Antoniadis ,  Nick Cravalho ,  Maxim Kelman ,  Elena Rogojina ,  Karel Vanheusden

Inventor： Giuseppe Scardera ,  Homer Antoniadis ,  Nick Cravalho ,  Maxim Kelman ,  Elena Rogojina ,  Karel Vanheusden

IPC: H01L21/22

CPC classification number: H01L21/2255 ,  H01L31/022425 ,  H01L31/068 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming a multi-doped junction on a substrate is disclosed. The method includes providing the substrate doped with boron atoms, the substrate comprising a front crystalline substrate surface; and forming a mask on the front crystalline substrate surface, the mask comprising exposed mask areas and non-exposed mask areas. The method also includes exposing the mask to an etchant, wherein porous silicon is formed on the front crystalline substrate surface defined by the exposed mask areas; and removing the mask. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3 gas, at a first temperature and for a first time period, wherein a PSG layer is formed on the front substrate surface; and heating the substrate in a drive-in ambient to a second temperature and for a second time period. Wherein a first diffused region with a first sheet resistance is formed under the porous silicon and a second diffused region with a second sheet resistance is formed under the front crystalline substrate surface without the porous silicon, and wherein the first sheet resistance is substantially smaller than the second sheet resistance.

Abstract translation: 公开了一种在衬底上形成多掺杂结的方法。 该方法包括提供掺杂有硼原子的衬底，该衬底包括前结晶衬底表面; 以及在所述前晶体衬底表面上形成掩模，所述掩模包括暴露的掩模区域和未暴露的掩模区域。 该方法还包括将掩模暴露于蚀刻剂，其中多孔硅形成在由暴露的掩模区限定的前结晶衬底表面上; 并取下面罩。 该方法还包括在第一温度和第一时间段内，使沉积环境包括沉积环境包含POCl 3气体的扩散炉中的衬底暴露于掺杂剂源，其中在前衬底表面上形成PSG层; 以及将驱动环境中的衬底加热至第二温度并持续第二时间段。 其中在多孔硅下方形成具有第一薄层电阻的第一扩散区域，并且在没有多孔硅的前结晶衬底表面下形成具有第二薄层电阻的第二扩散区域，并且其中第一薄层电阻显着小于 第二片电阻。

公开(公告)号：US20090269913A1

公开(公告)日：2009-10-29

申请号：US12109684

申请日：2008-04-25

Applicant: Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

Inventor： Mason Terry ,  Homer Antoniadis ,  Dmitry Poplavskyy ,  Maxim Kelman

IPC: H01L21/225

CPC classification number: H01L21/2256 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628 ,  H01L21/2257 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method of forming a diffusion region is disclosed. The method includes depositing a nanoparticle ink on a surface of a wafer to form a non-densified thin film, the nanoparticle ink having set of nanoparticles, wherein at least some nanoparticles of the set of nanoparticles include dopant atoms therein. The method also includes heating the non-densified thin film to a first temperature and for a first time period to remove a solvent from the deposited nanoparticle ink; and heating the non-densified thin film to a second temperature and for a second time period to form a densified thin film, wherein at least some of the dopant atoms diffuse into the wafer to form the diffusion region.

Abstract translation: 公开了形成扩散区域的方法。 该方法包括在晶片的表面上沉积纳米颗粒油墨以形成非致密化薄膜，纳米颗粒油墨具有一组纳米颗粒，其中该组纳米颗粒中的至少一些纳米颗粒包括其中的掺杂剂原子。 该方法还包括将非致密化薄膜加热至第一温度并且在第一时间段内从沉积的纳米颗粒油墨中除去溶剂; 以及将所述非致密化薄膜加热至第二温度并且持续第二时间以形成致密的薄膜，其中至少一些所述掺杂剂原子扩散到所述晶片中以形成所述扩散区域。

公开(公告)号：US20080078441A1

公开(公告)日：2008-04-03

申请号：US11857854

申请日：2007-09-19

Applicant: Dmitry Poplavskyy ,  Homer Antoniadis ,  David Jurbergs ,  Maxim Kelman ,  Francesco Lemmi ,  Pingrong Yu

Inventor： Dmitry Poplavskyy ,  Homer Antoniadis ,  David Jurbergs ,  Maxim Kelman ,  Francesco Lemmi ,  Pingrong Yu

IPC: H01L31/00 ,  H01L21/02

CPC classification number: H01L31/076 ,  H01L31/1804 ,  H01L31/1824 ,  Y02E10/545 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.

Abstract translation: 公开了一种用于从太阳辐射发电的装置。 该装置包括基板; 形成在基板上方的绝缘层; 以及形成在所述绝缘层之上的第一电极。 该器件还包括沉积在第一电极上的第一掺杂的IV族纳米颗粒薄膜; 以及沉积在第一掺杂的IV族纳米颗粒薄膜上的第二掺杂的IV族纳米颗粒薄膜。 该器件还包括沉积在第二掺杂的IV族纳米颗粒薄膜上的第三掺杂的IV族纳米颗粒薄膜; 沉积在第三掺杂的IV族纳米颗粒薄膜上的第四掺杂的IV族纳米颗粒薄膜; 以及形成在第四掺杂IV族纳米颗粒薄膜上的第二电极。 其中当向第四掺杂的IV族纳米颗粒薄膜施加太阳辐射时，产生电流。

公开(公告)号：US20060145599A1

公开(公告)日：2006-07-06

申请号：US11028881

申请日：2005-01-04

Applicant: Reza Stegamat ,  Homer Antoniadis

Inventor： Reza Stegamat ,  Homer Antoniadis

IPC: H05B33/00

CPC classification number: B82Y20/00 ,  B82Y30/00 ,  H01L51/5036

Abstract: An OLED application such as a light source is disclosed which has OLED elements utilizing an active EL (electro-luminescent) layer comprised of two elements, a host element emitting in a first spectrum and a dopant element emitting in a second spectrum different from the first. The OLED device also has a luminescent material disposed on the substrate or transparent electrode which converts the emission spectrum of light from the active EL layer.

Abstract translation: 公开了诸如光源的OLED应用，其具有利用由两个元件组成的有源EL（电致发光）层的OLED元件，以第一光谱发射的主元件和以与第一光谱不同的第二光谱发射的掺杂元素 。 OLED器件还具有设置在基板或透明电极上的发光材料，其转换来自有源EL层的光的发射光谱。

公开(公告)号：US06727008B1

公开(公告)日：2004-04-27

申请号：US08847138

申请日：1997-04-30

Applicant: Homer Antoniadis ,  Michael Inbasekaran ,  Edmund P. Woo

Inventor： Homer Antoniadis ,  Michael Inbasekaran ,  Edmund P. Woo

IPC: H05B3314

CPC classification number: H01L51/5012 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/007 ,  H01L51/0081 ,  H01L2251/308 ,  Y10S428/917

Abstract: An organic OLED having a cathode formed from a first conducting layer, an electroluminescent layer including an oxadiazole compound, and an anode constructed from a second conducting layer which is transparent to light generated by the electroluminescent layer. In one embodiment, an electron transport layer is sandwiched between the anode and electroluminescent layers. Other embodiments utilize a hole transport layer between the electroluminescent layer and the anode either with or without the electron transport layer. In one embodiment, the anode is constructed from a layer of indium tin oxide and a layer of a hole transport material that bonds to indium tin oxide and which has an energy band intermediate between that of indium tin oxide and that of the hole transport layer.

Abstract translation: 具有由第一导电层形成的阴极，包含恶二唑化合物的电致发光层的有机OLED和由对于由电致发光层产生的光透明的第二导电层构成的阳极。 在一个实施例中，电子传输层夹在阳极和电致发光层之间。 其它实施例在电致发光层和阳极之间利用电子传输层或不带​​电子传输层的空穴传输层。 在一个实施例中，阳极由铟锡氧化物层和键合到氧化铟锡的空穴传输材料层构成，并且其能带介于氧化铟锡和空穴传输层的能带之间。

公开(公告)号：US5948552A

公开(公告)日：1999-09-07

申请号：US704476

申请日：1996-08-27

Applicant: Homer Antoniadis ,  Daniel B. Roitman ,  William R. Shiang ,  Edmund P. Woo ,  Weishi Wu

Inventor： Homer Antoniadis ,  Daniel B. Roitman ,  William R. Shiang ,  Edmund P. Woo ,  Weishi Wu

IPC: H05B33/10 ,  C09K11/06 ,  G09F9/30 ,  H01L51/00 ,  H01L51/30 ,  H01L51/50 ,  H05B33/14 ,  H05B33/00 ,  B05D5/12

CPC classification number: H05B33/14 ,  H01L51/0035 ,  H01L51/0059 ,  H01L51/5012 ,  H01L2251/308 ,  H01L51/0081 ,  Y10S428/917 ,  Y10T428/31678

Abstract: An organic electroluminescent device that comprises a substrate, a first conductive layer on the substrate, an electron-transporting and light-emitting layer, a second conductive layer adjacent the electron-transporting and light-emitting layer and remote from the first conductive layer, and a hole-conducting layer sandwiched between the first conductive layer and the electron-transporting and light-emitting layer. The hole-conducting layer comprises a poly(arylamine) including at least one compound of formula (I): ##STR1## In this: R is independently in each occurrence a C.sub.1-24 hydrocarbyl, hydrocarboxyl, hydrothiocarboxy, hydroarylcarboxy, or hydrothioarylcarboxy; Ar.sub.1 and Ar.sub.2 are independently in each occurrence a C.sub.6-18 aryl moiety optionally substituted with one or more C.sub.1-24 hydrocarbyl, hydrocarboxyl, hydrothiocarboxy, hydroarycarboxy, or hydrothioarylcarboxy; A is independently in each occurrence hydrogen or a halogen; x is independently in each occurrence a positive number between 0 and 1; n is a whole number from 0 to 4; and m is a number from about 5 to about 1000.

Abstract translation: 一种有机电致发光器件，包括衬底，衬底上的第一导电层，电子传输和发光层，与电子传输和发光层相邻并远离第一导电层的第二导电层，以及 夹在第一导电层和电子传输和发光层之间的空穴传导层。 空穴传导层包括包含至少一种式（I）化合物的聚（芳基胺）：其中：R在每次出现时独立地为C 1-4烃基，氢化羧基，氢硫代羧基，​​氢化芳基羧基或氢硫代芳基羧基; Ar 1和Ar 2在每次出现时独立地为任选被一个或多个C 1-4烃基，氢羧基，氢硫代羧基，​​羟基羧基或氢硫代芳基羧基取代的C 6-18芳基部分; 在每次出现氢时，A独立地为氢或卤素; x在每次出现时独立地为0和1之间的正数; n是从0到4的整数; m为约5至约1000的数。