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    Method for preventing a metal corrosion in a semiconductor device
    41.
    发明授权
    Method for preventing a metal corrosion in a semiconductor device 失效
    用于防止半导体器件中的金属腐蚀的方法

    公开(公告)号：US07468319B2

    公开(公告)日：2008-12-23

    申请号：US11179455

    申请日：2005-07-11

    Applicant: Jae Suk Lee

    Inventor： Jae Suk Lee

    IPC: H01L21/44

    CPC classification number: H01L21/76888 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/32136

    Abstract: The present invention relates to a method for preventing a metal corrosion in a semiconductor device. The present method includes the steps of etching of a metal layer in a chamber, the metal layer having a photoresist pattern thereon or thereover; oxidizing a surface of the metal layer using a plasma comprising N2O in the same chamber; and removing the photoresist. Therefore, metal corrosion as well as bridges between metal wirings can be suppressed or prevented, thereby improving the profile of metal layer and the reliability and yield of the semiconductor device.

    Abstract translation: 本发明涉及一种在半导体器件中防止金属腐蚀的方法。 本方法包括以下步骤：在室中蚀刻金属层，金属层在其上具有光致抗蚀剂图案; 在同一室中使用包含N 2 O的等离子体对金属层的表面进行氧化; 并去除光致抗蚀剂。 因此，可以抑制或防止金属腐蚀以及金属布线之间的桥接，从而改善金属层的轮廓以及半导体器件的可靠性和产量。

    Method for forming an aluminum contact
    42.
    发明授权
    Method for forming an aluminum contact 失效
    铝触点形成方法

    公开(公告)号：US07407884B2

    公开(公告)日：2008-08-05

    申请号：US11319546

    申请日：2005-12-29

    Applicant: Jae-Suk Lee

    Inventor： Jae-Suk Lee

    IPC: H01L21/4763

    CPC classification number: H01L21/76886 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method of forming an aluminum contact including forming a barrier metal layer on an interlayer insulation layer pattern defining a contact hole, and forming an aluminum layer on the barrier metal layer so as to fill the contact hole. The method further includes forming a photoresist pattern for ion implantation, implanting ions into the aluminum layer, and annealing by using a rapid thermal process.

    Abstract translation: 一种形成铝触点的方法，包括在限定接触孔的层间绝缘层图案上形成阻挡金属层，并且在阻挡金属层上形成铝层以填充接触孔。 该方法还包括形成用于离子注入的光致抗蚀剂图案，将离子注入到铝层中，以及通过使用快速热处理进行退火。

    IRIDIUM COMPLEX, CARBAZOLE DERIVATIVES AND COPOLYMER HAVING THE SAME
    43.
    发明申请
    IRIDIUM COMPLEX, CARBAZOLE DERIVATIVES AND COPOLYMER HAVING THE SAME 失效
    IRIDIUM复合物，卡必醇衍生物和具有该衍生物的共聚物

    公开(公告)号：US20080177084A1

    公开(公告)日：2008-07-24

    申请号：US11941599

    申请日：2007-11-16

    Applicant: Jae-Suk Lee ,  Nam-Goo Kang ,  Hyo-jin Jeon

    Inventor： Jae-Suk Lee ,  Nam-Goo Kang ,  Hyo-jin Jeon

    IPC: C07D209/82 ,  C07F15/00 ,  C08G79/00

    CPC classification number: C07D209/82 ,  C08G65/4006

    Abstract: Disclosed are a monomer of iridium complex having a fluoro group as a functional group, a monomer of carbazole derivative having a hydroxy group as the functional group, and a copolymer containing the monomers in its main chain. The iridium complex used as a phosphorescent material and the carbazole derivative having an excellent hole transporting capability are synthesized as the monomer to form the copolymer. The content of iridium complex is easily controlled, and the carbazole derivative and iridium complex are contained in the main chain during the copolymer formation, thereby capable of manufacturing a light emitting device with higher heat resistance and chemical stability.

    Abstract translation: 公开了具有氟基作为官能团的铱配合物的单体，具有羟基作为官能团的咔唑衍生物的单体和在其主链中含有单体的共聚物。 合成用作磷光材料的铱络合物和具有优异的空穴传输能力的咔唑衍生物作为单体合成以形成共聚物。 铱络合物的含量容易控制，共聚物形成时主链含有咔唑衍生物和铱络合物，能够制造耐热性和化学稳定性高的发光元件。

    Methods of forming shallow trench isolation structures in semiconductor devices
    44.
    发明授权
    Methods of forming shallow trench isolation structures in semiconductor devices 失效
    在半导体器件中形成浅沟槽隔离结构的方法

    公开(公告)号：US07402500B2

    公开(公告)日：2008-07-22

    申请号：US11181607

    申请日：2005-07-13

    Applicant: Jae Suk Lee

    Inventor： Jae Suk Lee

    IPC: H01L21/762

    CPC classification number: H01L21/31053 ,  H01L21/76229

    Abstract: Methods of forming a shallow trench isolation structures in semiconductor devices are disclosed. A disclosed method comprises forming a first oxide layer, a nitride layer, and a second oxide layer on a substrate; forming a trench defining first and second active areas by etching the second oxide layer, the nitride layer, the first oxide layer, and the substrate in a predetermined area; forming a third oxide layer along an inside of the trench; forming a fourth oxide layer to fill up the trench; forming a sacrificial oxide layer on the fourth oxide layer; and removing the sacrificial oxide layer, the fourth oxide layer, the third oxide layer, the second oxide layer, and the nitride layer so as to form the shallow trench isolation. Thus, it is possible to minimize the damage of a narrow active area when forming an element isolation area through an STI process.

    Abstract translation: 公开了在半导体器件中形成浅沟槽隔离结构的方法。 所公开的方法包括在基板上形成第一氧化物层，氮化物层和第二氧化物层; 通过在预定区域中蚀刻所述第二氧化物层，所述氮化物层，所述第一氧化物层和所述衬底来形成限定第一和第二有源区的沟槽; 沿着所述沟槽的内部形成第三氧化物层; 形成第四氧化物层以填充沟槽; 在所述第四氧化物层上形成牺牲氧化物层; 去除牺牲氧化物层，第四氧化物层，第三氧化物层，第二氧化物层和氮化物层，以形成浅沟槽隔离。 因此，当通过STI工艺形成元件隔离区域时，可以最小化窄的有效面积的损伤。

    Damping structure of a hard disk drive
    45.
    发明授权
    Damping structure of a hard disk drive 失效
    硬盘驱动器的阻尼结构

    公开(公告)号：US07283323B2

    公开(公告)日：2007-10-16

    申请号：US10986024

    申请日：2004-11-12

    Applicant: Jae-suk Lee

    Inventor： Jae-suk Lee

    IPC: G11B17/00

    CPC classification number: G11B25/043 ,  G11B33/08

    Abstract: A damping structure of a hard disk drive. The damping structure includes: a damping plate arranged spaced apart from an upper surface of the cover member, such that an air gap is formed between the cover member and the damping plate; and a damping member arranged between an edge of the cover member and an edge of the damping plate. The damping plate includes a stepped portion which is inwardly formed at a portion spaced apart from the edge of the damping plate by a predetermined distance, and a bent portion which is formed at an edge of the damping plate and smoothly bent toward the cover member. In such a damping structure, an impact that is applied to the cover member from an outside can be reduced much more through the damping plate and the damping member.

    Abstract translation: 硬盘驱动器的阻尼结构。 阻尼结构包括：阻挡板，其与盖构件的上表面间隔开设置，使得在盖构件和阻尼板之间形成气隙; 以及设置在所述盖构件的边缘和所述阻尼板的边缘之间的阻尼构件。 阻尼板包括台阶部分，其在与阻尼板的边缘间隔开预定距离的部分处向内形成，弯曲部分形成在阻尼板的边缘处并平滑地朝向盖部件弯曲。 在这样的阻尼结构中，通过阻尼板和阻尼构件能够将从外部施加到盖构件的冲击减少得更多。

    Method for fabricating semiconductor device
    46.
    发明授权
    Method for fabricating semiconductor device 有权
    制造半导体器件的方法

    公开(公告)号：US07202184B2

    公开(公告)日：2007-04-10

    申请号：US11003926

    申请日：2004-12-03

    Applicant: Jae-Suk Lee

    Inventor： Jae-Suk Lee

    IPC: H01L21/469

    CPC classification number: H01L21/02164 ,  H01L21/02274 ,  H01L21/3165 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76837 ,  H01L23/53223 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: The present invention relates to a semiconductor device fabrication method, which includes forming an inter metal dielectric on a semiconductor substrate having wirings and planarizing the inter metal dielectric through a chemical mechanical polishing, wherein the inter metal dielectric is formed by carrying out at least one cycle of depositing polycrystalline silicon, plasma-processing the polycrystalline silicon, and oxidizing the polycrystalline silicon.

    Abstract translation: 本发明涉及一种半导体器件制造方法，其包括在具有布线的半导体衬底上形成金属间电介质，并通过化学机械抛光使金属间电介质平坦化，其中通过进行至少一个周期形成金属间电介质 沉积多晶硅，等离子体处理多晶硅，并氧化多晶硅。

    Poly(2-vinylpyridine)-b-poly(n-hexylisocyanate) amphiphilic coil-rod block copolymer and polymerization method thereof
    49.
    发明申请
    Poly(2-vinylpyridine)-b-poly(n-hexylisocyanate) amphiphilic coil-rod block copolymer and polymerization method thereof 审中-公开
    聚（2-乙烯基吡啶）-b-聚（正己基异氰酸酯）两亲性线性棒状嵌段共聚物及其聚合方法

    公开(公告)号：US20050215755A1

    公开(公告)日：2005-09-29

    申请号：US10993717

    申请日：2004-11-19

    Applicant: Jae-Suk Lee ,  Sang-Ho Han ,  Hyeong-Jin Kim ,  Yeong-Deuk Shin ,  Shashahar Samal

    Inventor： Jae-Suk Lee ,  Sang-Ho Han ,  Hyeong-Jin Kim ,  Yeong-Deuk Shin ,  Shashahar Samal

    IPC: C08G18/00 ,  C08F8/30 ,  C08F8/42 ,  C08F226/06 ,  C08F293/00 ,  C08F297/02 ,  C08G18/04 ,  C08G63/78 ,  C08L53/00

    CPC classification number: C08F297/02 ,  C08L53/00 ,  C08L2666/02

    Abstract: The present invention relates to a poly(2-vinylpyridine)-b-poly(n-hexylisocyanate) amphiphilic coil-rod block copolymer and a polymerization method thereof, more particularly to a poly(2-vinylpyridine)-b-poly(n-hexylisocyanate) amphiphilic coil-rod block copolymer polymerized by a process comprising synthesizing poly(2-vinylpyridine) having a narrow molecular weight distribution by living polymerization using potassium diphenylmethane (K-DPM) as initiator, adding sodium tetraphenylborate (NaBPh4) to replace the counter cation with a sodium ion (Na+) and adding n-hexylisocyanate and performing polymerization and a polymerization method thereof. According to the present invention, it is possible to control the molecular weight and the structure of each block of the copolymer. Therefore, coil-rod type amphiphilic block copolymers having a variety of structures can be obtained. The resultant block copolymer is a useful optical polymer material.

    Abstract translation: 本发明涉及聚（2-乙烯基吡啶）-b-聚（异己基异氰酸酯）两亲性线性棒状嵌段共聚物及其聚合方法，更具体地说涉及聚（2-乙烯基吡啶）-b-聚（n- 己基异氰酸酯）两亲性线棒嵌段共聚物，其通过包括通过使用二苯基甲烷（K-DPM）作为引发剂的活性聚合合成具有窄分子量分布的聚（2-乙烯基吡啶）的方法，加入四苯基硼酸钠（NaBPh 4 / SUB>）以用钠离子（Na + +）代替抗衡阳离子并加入正己基异氰酸酯并进行聚合及其聚合方法。 根据本发明，可以控制共聚物的每个嵌段的分子量和结构。 因此，可以获得具有各种结构的线棒型两亲嵌段共聚物。 得到的嵌段共聚物是有用的光学聚合物材料。

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