公开(公告)号：US06693366B2

公开(公告)日：2004-02-17

申请号：US10085182

申请日：2002-02-27

申请人： Rita J. Klein

发明人： Rita J. Klein

IPC分类号： H01L2358

CPC分类号： H01L21/7687 ,  C23C18/165 ,  C23C18/44 ,  H01L21/288 ,  H01L27/10852 ,  H01L28/55 ,  H01L28/65 ,  H01L28/75

摘要： A method for forming an oxidation barrier including at least partially immersing a semiconductor device structure in an electroless plating bath that includes at least one metal salt and at least one reducing agent. The reaction of the at least one metal salt with the at least one reducing agent simultaneously deposits metal and a dopant thereof. The oxidation barrier may be used to form conductive structures of semiconductor device structures, such as a capacitor electrode, or may be formed adjacent conductive or semiconductive structures of semiconductor device structures to prevent oxidation thereof. The oxidation barrier is particularly useful for preventing oxidation during the formation and annealing of a dielectric structure from a high dielectric constant material, such as Ta2O5 or BST.

摘要翻译： 一种形成氧化屏障的方法，包括至少部分地将半导体器件结构浸入包括至少一种金属盐和至少一种还原剂的化学镀浴中。 至少一种金属盐与至少一种还原剂的反应同时沉积金属及其掺杂剂。 氧化屏障可用于形成诸如电容器电极的半导体器件结构的导电结构，或者可以与半导体器件结构的导电或半导体结构相邻形成以防止其氧化。 氧化屏障特别可用于在从诸如Ta 2 O 5或BST的高介电常数材料形成和退火介电结构期间防止氧化。