公开(公告)号：US20050167573A1

公开(公告)日：2005-08-04

申请号：US10952914

申请日：2004-09-30

Applicant: Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

Inventor： Junya Maruyama ,  Toru Takayama ,  Masafumi Morisue ,  Ryosuke Watanabe ,  Eiji Sugiyama ,  Susumu Okazaki ,  Kazuo Nishi ,  Jun Koyama ,  Takeshi Osada ,  Takanori Matsuzaki

IPC: H01L27/146 ,  H01J40/14 ,  H01L21/82 ,  H01L27/14 ,  H01L31/00 ,  H01L31/10

CPC classification number: H01L27/1266 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/14609 ,  H01L27/14665 ,  H01L2224/16225

Abstract: The object of the present invention is to miniaturize the area occupied by the element and to integrate a plenty of elements in a limited area so that the sensor element can have higher output and smaller size. In the present invention, higher output and miniaturization are achieved by uniting a sensor element using an amorphous semiconductor film (typically an amorphous silicon film) and an output amplifier circuit including a TFT with a semiconductor film having a crystal structure (typically a poly-crystalline silicon film) used as an active layer over a plastic film substrate that can resist the temperature in the process for mounting such as a solder reflow process. According to the present invention, the sensor element that can resist the bending stress can be obtained.

Abstract translation: 本发明的目的是使元件占据的面积小型化，并将大量的元件集成在有限的区域中，使传感器元件具有更高的输出和更小的尺寸。 在本发明中，通过使用非晶半导体膜（通常为非晶硅膜）的传感器元件和包括具有晶体结构的半导体膜（通常为多晶体）的TFT的输出放大器电路来实现更高的输出和小型化 硅膜）用作塑料膜基材上的活性层，其能够抵抗诸如焊料回流工艺的安装过程中的温度。 根据本发明，可以获得能够抵抗弯曲应力的传感器元件。