公开(公告)号：US20050258734A1

公开(公告)日：2005-11-24

申请号：US11131195

申请日：2005-05-18

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US20050194912A1

公开(公告)日：2005-09-08

申请号：US11057723

申请日：2005-02-15

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto

IPC分类号： H01J9/42 ,  G09G3/10 ,  G09G3/20 ,  G09G3/22 ,  H01J9/02

CPC分类号： H01J29/863 ,  G09G3/22 ,  H01J31/127 ,  H01J2329/0489 ,  H01J2329/8615

摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

摘要翻译： 提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。 电子发射器件包括衬底，第一导体和第二导体。 基板由以下部分构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O 2，其中K < 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。 第一导体和第二导体位于基板上。 在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。

公开(公告)号：US06802753B1

公开(公告)日：2004-10-12

申请号：US09722454

申请日：2000-11-28

申请人： Yoichi Ando ,  Keisuke Yamamoto ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Satoshi Mogi ,  Akira Hayama

发明人： Yoichi Ando ,  Keisuke Yamamoto ,  Hideshi Kawasaki ,  Tamaki Kobayashi ,  Satoshi Mogi ,  Akira Hayama

IPC分类号： H01J900

CPC分类号： H01J9/027 ,  H01J2209/0223

摘要： In a manufacturing process of an image forming apparatus (electron beam device) using electron emission elements, particularly, surface conduction type electron emission elements, wirings on an electron source substrate on which the wirings and element electrodes are formed are opposite to electrodes for a face plate, and a given voltage is applied between the wirings and the electrodes to thereby generate a discharge phenomenon in advance, thus removing a protrusion or the like. In this way, when an electric field applying process is conducted on the electron source substrate, a factor such as a protrusion in an electron source which induces a discharge phenomenon in driving an electron beam device represented by an image forming apparatus is removed, thus realizing an image forming apparatus excellent in display characteristic with no defective pixel even in image display for a long period of time.

摘要翻译： 在使用电子发射元件，特别是表面传导型电子发射元件的图像形成装置（电子束装置）的制造方法中，形成有布线和元件电极的电子源基板上的布线与面对的电极相对 并且在布线和电极之间施加给定的电压，从而预先产生放电现象，从而去除突起等。 以这种方式，当在电子源基板上进行电场施加处理时，去除了在驱动由图像形成装置表示的电子束装置中引起放电现象的电子源中的突起等因素，从而实现 即使在长时间的图像显示中，也不会出现缺陷像素的显示特性优异的图像形成装置。

公开(公告)号：US06475050B1

公开(公告)日：2002-11-05

申请号：US09505628

申请日：2000-02-16

申请人： Satoshi Mogi ,  Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Satoshi Mogi ,  Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J902

CPC分类号： H01J9/148 ,  H01J1/36 ,  H01J29/085 ,  H01J2329/00

摘要： When high luminance is obtained by increasing an anode voltage in an image-forming apparatus constructed by anode and cathode substrates, a surface discharge (flash over) is generated between anode electrodes at a generating time of an abnormal discharge and an anode is broken. Therefore, as shown in FIG. 3B, the electric potential of an anode electrode on an anode substrate (51) is set to a uniform electric potential V1 by a first power source (53). Thereafter, the first power source (53) is separated from the anode electrode. Subsequently, the electric potential of one of the anode electrodes arranged in proximity to each other through an insulating face is set to an electric potential V2 by a second power sourced (54) to apply a voltage to a cut-in portion (52) (see FIG. 3C). Thus, a voltage Vc equal to or greater than an electric potential difference Ve generated at the generating time of the abnormal discharge is applied to the cut-in portion (52). Thus, the generation of a surface discharge (flash over) in the anode substrate can be prevented at the generating time of the abnormal discharge.

摘要翻译： 当通过增加由阳极和阴极基板构成的图像形成装置中的阳极电压获得高亮度时，在异常放电的产生时间和阳极断开之间在阳极之间产生表面放电（闪蒸）。 因此，如图1所示。 如图3B所示，通过第一电源（53）将阳极基板（51）上的阳极电极的电位设定为均匀的电位V1。 此后，第一电源（53）与阳极电极分离。 随后，通过绝缘面彼此靠近配置的阳极之一的电位被第二电源（54）设定为电位V2，以将电压施加到切入部（52）（ 参见图3C）。 因此，在异常放电的产生时刻产生的等于或大于电位差Ve的电压Vc被施加到切入部分（52）。 因此，能够防止在异常放电的产生时产生阳极基板中的表面放电（闪光）。

公开(公告)号：US06426596B1

公开(公告)日：2002-07-30

申请号：US09506602

申请日：2000-02-18

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

IPC分类号： G09G312

CPC分类号： H01J29/085 ,  H01J31/125

摘要： An image forming apparatus includes a cathode substrate on which an electron emitting device is disposed, and an anode substrate disposed opposite to the cathode substrate. The anode substrate includes an anode electrode including a plurality of conductive films connected in series and arranged to form gaps between neighboring films.

摘要翻译： 图像形成装置包括其上设置有电子发射器件的阴极衬底和与阴极衬底相对设置的阳极衬底。 阳极基板包括阳极电极，其包括串联连接并且布置成在相邻膜之间形成间隙的多个导电膜。