公开(公告)号：US07312561B2

公开(公告)日：2007-12-25

申请号：US11106584

申请日：2005-04-15

申请人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Takuto Moriguchi ,  Toshihiko Takeda ,  Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J9/02 ,  H01J1/00

CPC分类号： H01J1/316 ,  H01J9/027 ,  H01J31/127

摘要： An electron-emitting device is equipped with a pair of first electroconductive members arranged on a substrate with an interval between them, wherein the interval becomes narrower at an upper position distant from a surface of the substrate than at a position on the surface, and a peak of one of the pair of the first electroconductive members is higher than a peak of the other of the pair of the first electroconductive members, and further an electron scattering surface forming film including an element having an atomic number larger than those of elements constituting the first electroconductive members as a principal component is provided on a surface of the one of the first electroconductive members.

摘要翻译： 电子发射器件配备有一对第一导电构件，其布置在衬底之间，其间具有间隔，其中在距离衬底表面的上位置处的间隔比在表面上的位置处更窄，并且 一对第一导电构件中的一个的峰值高于一对第一导电构件中的另一个的峰值，并且还包括电子散射表面形成膜，其包含原子序数大于构成 第一导电构件作为主要部件设置在第一导电构件之一的表面上。

公开(公告)号：US07264530B2

公开(公告)日：2007-09-04

申请号：US11057723

申请日：2005-02-15

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto

IPC分类号： H01J9/02 ,  H01J9/00

CPC分类号： H01J29/863 ,  G09G3/22 ,  H01J31/127 ,  H01J2329/0489 ,  H01J2329/8615

摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

摘要翻译： 提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。 电子发射器件包括衬底，第一导体和第二导体。 基板由以下物质构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O，其中K 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。 第一导体和第二导体位于基板上。 在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。

公开(公告)号：US07230372B2

公开(公告)日：2007-06-12

申请号：US11106636

申请日：2005-04-15

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J19/06

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与基板接触形成在基板上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US06642649B1

公开(公告)日：2003-11-04

申请号：US09513133

申请日：2000-02-25

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

IPC分类号： H01J162

CPC分类号： H01J1/316 ,  H01J2201/30446 ,  H01J2201/3165

摘要： There are here disclosed an electron-emitting device, comprising a pair of conductors arranged on a substrate so as to face each other, and a pair of deposited films containing carbon as a main component which are connected to the pair of conductors respectively and which ate arranged putting a gap therebetween, wherein silver is contained in a ratio of 5 mol % to 10 mol % with respect to carbon in the deposited film, an electron source comprising the plurality of electron-emitting devices arranged on a substrate and a wire connected to the electron-emitting devices and an image-forming apparatus comprising the electron source and an image-forming member which performs image formation by the collision of electrons emitted from the electron source.

摘要翻译： 这里公开了一种电子发射器件，包括一对导体，其布置在基板上以彼此面对，以及一对沉积膜，其以碳为主要成分分别连接到所述一对导体，并且所述一对导体分别与所述一对导体 布置在其间的间隙，其中相对于沉积膜中的碳以5摩尔％至10摩尔％的比例含有银，包括布置在基板上的多个电子发射器件的电子源和连接到 电子发射器件和包括电子源和图像形成部件的图像形成装置，其通过与电子源发射的电子的碰撞进行图像形成。

公开(公告)号：US06633118B1

公开(公告)日：2003-10-14

申请号：US09513135

申请日：2000-02-25

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi ,  Satoshi Mogi

IPC分类号： H01J162

CPC分类号： H01J1/316

摘要： An electron-emitting device includes, a pair of electroconductors disposed on a substrate so as to face each other, and a pair of deposit films connected to the pair of electroconductors, respectively, disposed with a gap therebetween and mainly containing carbon. Lead is contained in the deposit films in a rate of from 1 mol % to 5 mol %% with respect to carbon.

摘要翻译： 电子发射器件包括：一对电导体，其设置在基板上以彼此面对;以及一对沉积膜，分别与一对导电体连接，间隔开并主要包含碳。 铅以相对于碳为1摩尔％至5摩尔%%的比率包含在沉积膜中。

公开(公告)号：US20090244398A1

公开(公告)日：2009-10-01

申请号：US12481851

申请日：2009-06-10

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H04N5/44 ,  H01J1/02 ,  H04N5/66

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US07582002B2

公开(公告)日：2009-09-01

申请号：US11621658

申请日：2007-01-10

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J9/12 ,  H01J9/04

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US20070176532A1

公开(公告)日：2007-08-02

申请号：US11621658

申请日：2007-01-10

申请人： Keisuke Yamamoto ,  Tamaki Kobayashi

发明人： Keisuke Yamamoto ,  Tamaki Kobayashi

IPC分类号： H01J1/62

CPC分类号： H01J1/316 ,  H01J9/027

摘要： In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emitting region, electron-emitting efficiency is improved, and a long life is realized.

摘要翻译： 在具有以一定间隔配置在基板上的一对电导体的电子发射器件中，一个电导体的顶部高于另一个导电体的顶部，以及从间隔区域延伸到在一个电导体 与衬底接触形成在衬底上。 通过不对称电子发射区域抑制由于带电粒子的碰撞引起的电子发射器件的劣化，提高了电子发射效率，并且实现了长寿命。

公开(公告)号：US20050258734A1

公开(公告)日：2005-11-24

申请号：US11131195

申请日：2005-05-18

申请人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

发明人： Koki Nukanobu ,  Keisuke Yamamoto ,  Tamaki Kobayashi ,  Takuto Moriguchi

IPC分类号： H01J1/30 ,  H01J1/316 ,  H01J29/04 ,  H01J31/12

CPC分类号： H01J1/316

摘要： By applying a drive voltage Vf [V] between first and second conductive films, when electrons are emitted by the first conductive film, an equipotential line of 0.5 Vf [V] is inclined toward the first conductive film, rather than toward the second conductive film, in the vicinity of the electron emitting portion of the first conductive film, in a cross section extending across the electron emitting portion and the portion of the second conductive film located nearest the electron emitting portion. The present invention improves electron emission efficiency.

摘要翻译： 通过在第一导电膜和第二导电膜之间施加驱动电压Vf [V]，当电子被第一导电膜发射时，0.5Vf [V]的等电位线朝向第一导电膜倾斜，而不是朝向第二导电膜 在第一导电膜的电子发射部分附近，横跨电子发射部分的横截面和位于最靠近电子发射部分的第二导电膜的部分。 本发明提高电子发射效率。

公开(公告)号：US20050194912A1

公开(公告)日：2005-09-08

申请号：US11057723

申请日：2005-02-15

申请人： Tamaki Kobayashi ,  Keisuke Yamamoto

发明人： Tamaki Kobayashi ,  Keisuke Yamamoto

IPC分类号： H01J9/42 ,  G09G3/10 ,  G09G3/20 ,  G09G3/22 ,  H01J9/02

CPC分类号： H01J29/863 ,  G09G3/22 ,  H01J31/127 ,  H01J2329/0489 ,  H01J2329/8615

摘要： Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na2O, and K2O and in which a molar ratio of K2O to Na2O is 0.5 to 2.0; and a film which contains silicon oxide as a main component and is stacked on the member. The first conductor and the second conductor are located on the substrate. In a forming step and/or an activation step, a quiescent period (interval) of a pulse voltage applying repeatedly applied between the first conductor and the second conductor is set equal to or longer than 10 msec.

摘要翻译： 提供了一种能够制造电子发射器件的制造方法，其中制造时的器件电流的变化被抑制并因此其均匀性高。 电子发射器件包括衬底，第一导体和第二导体。 基板由以下部分构成：以氧化硅为主要成分的成分，Na 2 O和K 2 O 2，其中K < 2 O 2至Na 2 O为0.5至2.0; 以及含有氧化硅作为主要成分并层叠在该部件上的膜。 第一导体和第二导体位于基板上。 在形成步骤和/或激活步骤中，重复施加在第一导体和第二导体之间的脉冲电压的静止周期（间隔）被设置为等于或大于10毫秒。