公开(公告)号：US07648890B2

公开(公告)日：2010-01-19

申请号：US11504969

申请日：2006-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.

摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

公开(公告)号：US20100009155A1

公开(公告)日：2010-01-14

申请号：US12501343

申请日：2009-07-10

申请人： Tomohiro Hashii ,  Kazushige Takaishi

发明人： Tomohiro Hashii ,  Kazushige Takaishi

IPC分类号： B32B5/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B37/08

摘要： It is to provide a double-side mirror-finished semiconductor wafer having an excellent flatness by conducting a polishing step from rough polishing to finish polishing for simultaneously polishing both surfaces of a raw wafer with the same polishing cloth to reduce the polishing amount of the raw wafer as well as a production method thereof.In method of producing a semiconductor wafer, which comprises a polishing step for finish-polishing both surfaces of a raw wafer while supplying a polishing solution containing abrasives to a polishing cloth, wherein at least two polishing solutions classified by an average particle size of abrasives to be included are supplied into the polishing cloth while changing from a polishing solution containing larger size of abrasives to a polishing solution containing smaller size of abrasives in stages, whereby the polishing step from rough polishing to finish polishing is conducted on both surfaces of the raw wafer simultaneously with the same polishing cloth, whereby the flatness (GBIR) of not more than 0.1 μm is attained even in large-size semiconductor wafers having a diameter of not less than 450 mm.

摘要翻译： 通过从粗抛光进行抛光步骤来提供具有优异平坦度的双面镜面半导体晶片，以完成抛光，同时用相同的抛光布抛光原始晶片的两个表面，以减少生坯的抛光量 晶圆及其制造方法。 一种半导体晶片的制造方法，其特征在于，包括在将研磨布供给含有研磨剂的研磨液供给到研磨布的同时将原料晶片的两面进行精抛光的研磨工序，其中，将至少两种由研磨剂的平均粒径分级的研磨液分配至 被包括的物品在从包含较大尺寸的研磨剂的抛光溶液分阶段提供到抛光布中的同时被供给到包含较小尺寸的研磨剂的抛光溶液中，由此在原始晶片的两个表面上进行从粗抛光到精抛光的抛光步骤 同时使用相同的抛光布，即使在直径不小于450mm的大尺寸半导体晶片中也可获得不大于0.1μm的平坦度（GBIR）。

公开(公告)号：US20090311808A1

公开(公告)日：2009-12-17

申请号：US12475816

申请日：2009-06-01

申请人： Tomohiro Hashii ,  Yuichi Kakizono

发明人： Tomohiro Hashii ,  Yuichi Kakizono

IPC分类号： H01L21/66 ,  H01L21/306

CPC分类号： H01L21/02008 ,  Y02P80/30

摘要： A semiconductor wafer is produced by a method comprising a slicing step, an one-side polishing step and a chemical treating step, in which the kerf loss is reduced and the flatness is improved.

摘要翻译： 通过包括切割步骤，单面研磨步骤和化学处理步骤的方法制造半导体晶片，其中切口损失减小并且平坦度得到改善。

公开(公告)号：US20090004876A1

公开(公告)日：2009-01-01

申请号：US12162829

申请日：2007-01-24

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

公开(公告)号：US20080214094A1

公开(公告)日：2008-09-04

申请号：US12031917

申请日：2008-02-15

申请人： Takeo KATOH ,  Yasuyuki Hashimoto ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata

发明人： Takeo KATOH ,  Yasuyuki Hashimoto ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata

IPC分类号： B24B7/24 ,  B28D1/02 ,  B24B7/26 ,  B24B9/08

CPC分类号： B24B37/042 ,  B24B9/14 ,  B24B37/08 ,  H01L21/02008 ,  H01L21/02021

摘要： A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured.

摘要翻译： 硅晶片的制造方法包括：硅单晶锭的切片工序，得到切片晶片，仅研磨晶片的一侧的单面研磨工序，以及使晶片的另一侧平滑化的平滑化工序 控制取决于晶片另一侧的表面轮廓的蚀刻剂的应用。 根据本发明的方法，可以制造具有高平整度的硅晶片，机械加工损坏被去除，并且可以制造倒角的轮廓变化最小化。

公开(公告)号：US07288207B2

公开(公告)日：2007-10-30

申请号：US11345009

申请日：2006-01-31

申请人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

发明人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

IPC分类号： C23F1/00

CPC分类号： H01L21/02008 ,  C30B33/10

摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

摘要翻译： 一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序 其中二氧化硅粉末均匀分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16， 按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。

公开(公告)号：US20070224821A1

公开(公告)日：2007-09-27

申请号：US11597169

申请日：2005-09-02

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takatshi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takatshi ,  Takeo Katoh

IPC分类号： C30B33/00

CPC分类号： B24B37/042 ,  H01L21/02019 ,  H01L21/30604

摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

摘要翻译： 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

公开(公告)号：US20070184658A1

公开(公告)日：2007-08-09

申请号：US11688041

申请日：2007-03-19

申请人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

发明人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

IPC分类号： C09K13/00 ,  C03C15/00 ,  H01L21/302

CPC分类号： H01L21/02008 ,  C30B33/10

摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

摘要翻译： 一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序 其中二氧化硅粉末均匀分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16， 按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。

公开(公告)号：US06969302B1

公开(公告)日：2005-11-29

申请号：US09594502

申请日：2000-06-16

申请人： Tomohiro Hashii

发明人： Tomohiro Hashii

IPC分类号： B24B7/17 ,  B24B7/22 ,  B24B37/00 ,  H01L21/304

CPC分类号： B24B37/08 ,  B24B7/228

摘要： To reduce the wafer production cost by grinding a sliced semiconductor wafer at a high accuracy and a high efficiency and supplying the wafer to the next polishing step. A semiconductor wafer is rough ground between grindstones by a fixed grindstone. After rough grinding, finish grinding by free abrasive grain is performed on the same grinding axis by supplying a slurry which suspends fine abrasive grain between the grindstones through slurry pipes. To perform finish grinding by free abrasive grains, a rotational speed and a feed rate of the grindstones are lowered to lower the grinding action by a fixed grindstone.

摘要翻译： 通过以高精度和高效率研磨切片的半导体晶片来降低晶片生产成本，并将晶片供给下一个抛光步骤。 半导体晶片通过固定磨石在磨石之间粗糙地面。 粗磨之后，通过供给通过浆料管在砂轮之间悬浮精细磨粒的浆料，在相同的研磨轴上进行无磨损颗粒的精磨。 为了通过自由磨粒进行精磨，降低了磨石的旋转速度和进给速率，以通过固定磨石降低研磨动作。

公开(公告)号：US06753256B2

公开(公告)日：2004-06-22

申请号：US09919900

申请日：2001-08-02

申请人： Tomohiro Hashii ,  Tooru Watanabe

发明人： Tomohiro Hashii ,  Tooru Watanabe

IPC分类号： H01L21302

CPC分类号： H01L21/02008 ,  B24B37/042 ,  B24B37/08

摘要： An object of the present invention is to provide a method of manufacturing a semiconductor wafer in which the manufacturing efficiency of grinding using a double-headed grinding machine is improved, minute surface undulations arising through the grinding are reduced, and the yield of the manufacturing process is improved. By processing a sliced wafer using a double-headed grinding machine, a strained layer and a macroscopic undulation component formed on the wafer surfaces during the slicing are removed, and the degree of flatness of the wafer is improved, and by subsequently carrying out both-surfaces lapping, minute surface undulations that arose during the double-headed grinding are removed.

摘要翻译： 本发明的目的是提供一种制造半导体晶片的方法，其中使用双头磨床的研磨制造效率提高，通过研磨产生的微小的表面波动减小，并且制造过程的产量 改进了 通过使用双头研磨机处理切片晶片，去除在切片期间在晶片表面上形成的应变层和宏观波动部件，提高晶片的平坦度， 研磨表面，去除在双头研磨过程中产生的微小表面起伏。