Abstract:
Cross-coupled low noise amplifier for cellular applications. A circuitry implementation that includes two pairs of metal oxide semiconductor field-effect transistors (MOSFETs) (either N-type of P-type) operates as an LNA, which can be used within any of a wide variety of communication devices. In one embodiment, this design is particularly adaptable to cellular telephone applications. A majority of the elements are integrated within the design and need not be implemented off-chip, and this can provide for a reduction in area required by the circuitry. A very high output impedance is provided by using two transistors (implemented in a triple well configuration) with resistive source degeneration. A higher than typical power supply voltage can be employed (if desired) to accommodate the voltage drops of the resistors and transistors.
Abstract:
Aspects of a method and system for a low power fully differential noise canceling low noise amplifier (NC LNA) are provided. The NC LNA may receive signals via a single ended input and may generate an amplified symmetric differential output from the received signals. The NC LNA may utilize capacitor dividers, such as a capacitor bank, in the single ended input in order to provide impedance transformation that enables low power operation and matching to an input port. The NC LNA may generate one portion of the amplified symmetric differential output via a voltage divider, which may comprise a plurality of capacitors, such as a capacitor bank. The NC LNA may be implemented utilizing one or more circuits.