公开(公告)号：US20180158814A1

公开(公告)日：2018-06-07

申请号：US15370912

申请日：2016-12-06

Applicant: ANALOG DEVICES, INC.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy

IPC: H01L27/02 ,  H01L23/50 ,  H02H9/04

CPC classification number: H01L27/0285 ,  H01L27/0255 ,  H01L27/0262 ,  H02H9/046

Abstract: In certain configurations, an input/output (IO) interface of a semiconductor chip includes a pin, an interface switch connected to the pin, and an overstress detection and active control circuit that controls a resistance of the interface switch with active feedback. The overstress detection and active control circuit increases a resistance of the interface switch in response to detection of a transient overstress event between a first node and a second node. Accordingly, the overstress detection and active control circuit provides separate detection and logic control to selectively modify the resistance of the interface switch such that the interface switch operates with low resistance during normal operating conditions and with high resistance during overstress conditions.

公开(公告)号：US20160336744A1

公开(公告)日：2016-11-17

申请号：US14797675

申请日：2015-07-13

Applicant: ANALOG DEVICES, INC.

Inventor： Srivatsan Parthasarathy ,  Javier Alejandro Salcedo ,  Rodrigo Carrillo-Ramirez

IPC: H02H9/04

CPC classification number: H02H9/046 ,  H01L27/0248 ,  H01L27/0266 ,  H02H9/04

Abstract: Apparatus and methods for electrostatic discharge (ESD) protection of radio frequency circuits are provided. In certain configurations, an ESD protection circuit includes two or more pairs of field effect transistors (FETs) electrically connected in series between a radio frequency signal pin and a radio frequency ground pin. Each of the two or more pairs of FETs includes a negative ESD protection FET for providing protection from negative polarity ESD events and a positive ESD protection FET for providing protection from positive polarity ESD events. The source and gate of the negative ESD protection FET are electrically connected to one another, and the source and gate of the positive ESD protection FET are electrically connected to one another. Additionally, the drains of the negative and positive ESD protection FETs are electrically connected to one another. The ESD protection circuit exhibits a relatively low capacitance and flat capacitance versus voltage characteristic.

Abstract translation: 提供射频电路的静电放电（ESD）保护装置和方法。 在某些配置中，ESD保护电路包括串联电连接在射频信号引脚和射频接地引脚之间的两对或更多对场效应晶体管（FET）。 两对或更多对FET中的每一个包括用于提供对负极性ESD事件的保护的负ESD保护FET和用于提供对正极性ESD事件的保护的正ESD保护FET。 负ESD保护FET的源极和栅极彼此电连接，并且正ESD保护FET的源极和栅极彼此电连接。 此外，负极和正极ESD保护FET的漏极彼此电连接。 ESD保护电路具有相对低的电容和平坦的电容对电压特性。

公开(公告)号：US20160020603A1

公开(公告)日：2016-01-21

申请号：US14335665

申请日：2014-07-18

Applicant: Analog Devices, Inc.

Inventor： Srivatsan Parthasarathy ,  Javier Alejandro Salcedo ,  Sandro Herrera

IPC: H02H9/00 ,  H01L27/02 ,  H02H9/02

CPC classification number: H02H9/005 ,  H01L27/0285 ,  H02H9/046

Abstract: Apparatus and methods for providing transient overstress protection with active feedback are disclosed. In certain configurations, a protection circuit includes a transient detection circuit, a bias circuit, a clamp circuit, and a sense feedback circuit that generates a positive feedback current when the clamp circuit is clamping. The transient detection circuit can detect a presence of a transient overstress event, and can generate a detection current in response to detection of the transient overstress event. The detection current and the positive feedback current can be combined to generate a combined current, and the bias circuit can turn on the clamp circuit in response to the combined current. While the transient overstress event is present and the clamp circuit is clamping, the sense feedback circuit can generate the positive feedback current to maintain the clamp circuit turned on for the event's duration.

Abstract translation: 公开了用于提供具有主动反馈的瞬态过应力保护的装置和方法。 在某些配置中，保护电路包括瞬态检测电路，偏置电路，钳位电路和在钳位电路钳位时产生正反馈电流的感测反馈电路。 瞬变检测电路可以检测到瞬态过应力事件的存在，并且可以响应于瞬态过应力事件的检测而产生检测电流。 可以组合检测电流和正反馈电流以产生组合电流，并且偏置电路可以响应于组合电流而导通钳位电路。 当存在瞬态过应力事件并且钳位电路被钳位时，感测反馈电路可以产生正反馈电流，以维持钳位电路在事件持续时间内导通。

公开(公告)号：US09123540B2

公开(公告)日：2015-09-01

申请号：US14068566

申请日：2013-10-31

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy

IPC: H01L29/72 ,  H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/7436

Abstract: Signal IO protection devices referenced to a single supply are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power supply network, such as a power low supply network or a power high supply network. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. In other implementations, a protection device includes first and second SCRs for providing protection between the signal node and the power low supply network or between the signal node and the power high supply network, and the SCR structures are integrated in a common circuit layout. The protection devices are suitable for single cell data conversion interface protection to a single supply in sub 3V operation.

Abstract translation: 本文提供了参考单电源的信号IO保护装置。 在某些实施方式中，保护装置包括第一可控硅整流器（SCR）和第一二极管，用于在信号节点和电源网络之间提供保护，诸如电源低供电网络或电源高供电网络。 SCR和二极管结构集成在公共电路布局中，使得某些阱和有源区域在结构之间共享。 在其他实施方式中，保护装置包括第一和第二SCR，用于在信号节点和功率低供电网络之间或在信号节点和电力高供电网络之间提供保护，并且SCR结构集成在公共电路布局中。 保护装置适用于单电池数据转换接口保护，在3V以下的单电源供电。

公开(公告)号：US20150138678A1

公开(公告)日：2015-05-21

申请号：US14084350

申请日：2013-11-19

Applicant: ANALOG DEVICES, INC.

Inventor： Srivatsan Parthasarathy ,  Rodrigo Carrillo-Ramirez

IPC: H02H9/04 ,  H02H9/00

CPC classification number: H02H9/046 ,  H01L27/0255 ,  H02H9/005

Abstract: Electrostatic discharge (ESD) protection devices can protect electronic circuits. In the context of radio frequency (RF) circuits and the like, the insertion loss of conventional ESD protection devices can be undesirable. The amounts of parasitic capacitances at nodes of devices of an ESD protection device are not necessarily symmetrical, with respect to the substrate. Disclosed are techniques which decrease the parasitic capacitances at signal nodes, which improve the insertion loss characteristics of ESD protection devices.

Abstract translation: 静电放电（ESD）保护装置可以保护电子电路。 在射频（RF）电路等的上下文中，常规ESD保护装置的插入损耗可能是不期望的。 ESD保护器件的器件节点处的寄生电容量不一定对称于衬底。 公开了减少信号节点处的寄生电容的技术，其改善ESD保护装置的插入损耗特性。

公开(公告)号：US09006781B2

公开(公告)日：2015-04-14

申请号：US14068869

申请日：2013-10-31

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy

IPC: H01L27/02 ,  H01L21/8249

CPC classification number: H01L27/0262 ,  H01L27/0255

Abstract: Apparatus and methods for monolithic data conversion interface protection are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power high supply node, a second SCR and a second diode for providing protection between the signal node and a power low supply node, and a third SCR and a third diode for providing protection between the power high supply node and the power low supply node. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. Configuring the protection device in this manner enables in-suit input/output interface protection using a single cell. The protection device is suitable for monolithic data conversion interface protection in sub 3V operation.

Abstract translation: 本文提供了单片数据转换接口保护的装置和方法。 在某些实施方式中，保护装置包括第一可控硅整流器（SCR）和用于在信号节点和功率高电源节点之间提供保护的第一二极管，第二SCR和第二二极管，用于在信号节点和 电源低电源节点，以及用于在电源高供电节点和电源低电源节点之间提供保护的第三SCR和第三二极管。 SCR和二极管结构集成在公共电路布局中，使得某些阱和有源区域在结构之间共享。 以这种方式配置保护设备可以使用单个单元进行适合的输入/输出接口保护。 该保护装置适用于3V以下的单片数据转换接口保护。

公开(公告)号：US20150076557A1

公开(公告)日：2015-03-19

申请号：US14068566

申请日：2013-10-31

Applicant: Analog Devices, Inc.

Inventor： Javier Alejandro Salcedo ,  Srivatsan Parthasarathy

IPC: H01L27/02

CPC classification number: H01L27/0262 ,  H01L29/7436

Abstract: Signal IO protection devices referenced to a single supply are provided herein. In certain implementations, a protection device includes a first silicon controlled rectifier (SCR) and a first diode for providing protection between a signal node and a power supply network, such as a power low supply network or a power high supply network. The SCR and diode structures are integrated in a common circuit layout, such that certain wells and active regions are shared between structures. In other implementations, a protection device includes first and second SCRs for providing protection between the signal node and the power low supply network or between the signal node and the power high supply network, and the SCR structures are integrated in a common circuit layout. The protection devices are suitable for single cell data conversion interface protection to a single supply in sub 3V operation.

Abstract translation: 本文提供了参考单电源的信号IO保护装置。 在某些实施方式中，保护装置包括第一可控硅整流器（SCR）和第一二极管，用于在信号节点和电源网络之间提供保护，诸如电源低供电网络或电源高供电网络。 SCR和二极管结构集成在公共电路布局中，使得某些阱和有源区域在结构之间共享。 在其他实施方式中，保护装置包括第一和第二SCR，用于在信号节点和功率低供电网络之间或在信号节点和电力高供电网络之间提供保护，并且SCR结构集成在公共电路布局中。 保护装置适用于单电池数据转换接口保护，在3V以下的单电源供电。