DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20220359627A1

    公开(公告)日:2022-11-10

    申请号:US17639499

    申请日:2021-03-30

    Abstract: A display substrate is provided, including a base substrate, an anode layer arranged on the base substrate, a pixel definition layer arranged at a side of the anode layer away from the base substrate and configured to define a plurality of pixels, and a plurality of pixel banks arranged on the pixel definition layer. The pixel definition layer and the plurality of pixel banks are arranged in such a manner as to divide each pixel into a plurality of subpixels. The pixel banks include first pixel banks each arranged between two adjacent subpixels in different colors, each first pixel bank is a line bank extending in a first direction, a light-emitting region for covering an anode of an OLED element and a non-light-emitting region outside the light-emitting region are arranged between two adjacent first pixel banks in a same pixel along the first direction, and an organic light-emitting layer barrier structure is arranged at the non-light-emitting region to reduce a difference between a thickness of an organic light-emitting layer at a periphery of the subpixel and a thickness of the organic light-emitting layer in the middle of the subpixel in a direction perpendicular to the base substrate. A display device is further provided.

    DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME

    公开(公告)号:US20220344407A1

    公开(公告)日:2022-10-27

    申请号:US17859605

    申请日:2022-07-07

    Abstract: Disclosed is a display apparatus, the display apparatus includes: a base, a display layer disposed on a side of the base, and a color filter layer disposed on a display side of the display layer. The display layer includes a plurality of sub-pixels. The color filter layer includes a plurality of color resistance portions in one-to-one correspondence with the plurality of sub-pixels. A thickness of any color resistance portion of the plurality of color resistance portions is decreased in a direction away from a reference line of the color resistance portion, and the reference line is a straight line passing through a geometric center of the color resistance portion and perpendicular to the base.

    LIGHT EMITTING DIODE CHIP, DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME

    公开(公告)号:US20220238594A1

    公开(公告)日:2022-07-28

    申请号:US17488243

    申请日:2021-09-28

    Abstract: A LED chip, including: substrate; LEDs on side of the substrate, each including first semiconductor pattern, light emission pattern, second semiconductor pattern sequentially stacked, the first semiconductor patterns of at least two LEDs being formed as single piece to constitute first semiconductor layer; at least one first electrode on side of first semiconductor layer away from the substrate and electrically coupled to first semiconductor layer; second electrodes on side of the second semiconductor patterns away from the substrate, each being electrically coupled to second semiconductor pattern of corresponding LED; pixel defining layer on side of the substrate away from LED, and having pixel openings in one-to-one correspondence with LEDs; and a color conversion pattern within at least two pixel openings, and converting light of first color emitted by the light emission pattern into light of target color other than the first color. The LED chip is Mini-LED or Micro-LED chip.

    DEVICE AND SYSTEM FOR TESTING FLATNESS

    公开(公告)号:US20220238391A1

    公开(公告)日:2022-07-28

    申请号:US17483613

    申请日:2021-09-23

    Abstract: The present disclosure relates to a device and a system for testing flatness. The device for testing flatness includes a base, a testing platform, and a ranging sensor. The testing platform is assembled on the base. The testing platform includes a supporting structure. The supporting structure is disposed on the side of the testing platform away from the base and is used to support a to-be-tested board. The structure matches the structure of the to-be-tested board. The ranging sensor is disposed on the side of the testing platform away from the base. After the to-be-tested board is placed on the testing platform, the ranging sensor is used to test distances between a number N of to-be-tested positions on the to-be-tested board and the ranging sensor, to obtain N pieces of distance information, and the N pieces of distance information are used to determine the flatness of the to-be-tested board, where N is an integer greater than 2. According to the embodiments of the present disclosure, the flatness of the glass substrate can be tested to improve the manufacturing process to reduce the flatness of the glass substrate, and avoid the problem that the glass substrate is easily broken when entering the subsequent process equipment and the process equipment is down.

    BIOCHIP AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20220126294A1

    公开(公告)日:2022-04-28

    申请号:US17432580

    申请日:2021-01-22

    Abstract: A biochip and a method for manufacturing the same are provided. The biochip includes: a guide layer; a channel layer on the guide layer, wherein the channel layer has therein a plurality of first channels extending in a first direction; a plurality of second channels extending in a second direction, wherein each of the plurality of second channels is in communication with the plurality of first channels, the plurality of second channels are in a layer where the channel layer is located, or in a layer where the channel layer and the guide layer are located; an encapsulation cover plate on a side of the channel layer distal to the guide layer; and a driving unit configured to drive biomolecules to move.

    DISPLAY SUBSTRATE AND DISPLAY DEVICE

    公开(公告)号:US20220037621A1

    公开(公告)日:2022-02-03

    申请号:US17279872

    申请日:2020-07-22

    Abstract: A display substrate has at least one display region and at least one non-display region, and a non-display region is located at at least one side of a display region. The display substrate includes a base, a plurality of light-emitting devices, and an encapsulation layer. The plurality of light-emitting devices are located in the at least one display region and disposed on a side of the base. The encapsulation layer is disposed on a side of the plurality of light-emitting devices facing away from the base, and configured to encapsulate the plurality of light-emitting devices. A surface, proximate to the base, of a portion of the encapsulation layer located in the non-display region is unevenly arranged.

    DRIVING SUBSTRATE AND MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE

    公开(公告)号:US20220028898A1

    公开(公告)日:2022-01-27

    申请号:US17354007

    申请日:2021-06-22

    Abstract: The present disclosure provides a driving substrate including: a flexible substrate base, a plurality of thin film transistors on the flexible substrate base and a first conductive pattern layer on a side of the thin film transistors distal to the flexible substrate base. The first conductive pattern layer includes: a plurality of first connection terminals in the display region and a plurality of signal supply lines in the bendable region. A first number of first connection terminals are electrically coupled to first electrodes of the plurality of thin film transistors. The plurality of signal supply lines are coupled to a second number of first connection terminals other than the first number of first connection terminals. At least one inorganic insulating layer including a hollowed-out pattern in the bendable region is between the first conductive pattern layer and the flexible substrate base.

    SILICON-BASED NANOWIRE, PREPARATION METHOD THEREOF, AND THIN FILM TRANSISTOR

    公开(公告)号:US20210240080A1

    公开(公告)日:2021-08-05

    申请号:US17048301

    申请日:2020-03-25

    Abstract: The present disclosure discloses a silicon-based nanowire, a preparation method thereof, and a thin film transistor. By using a eutectic point of catalyst particles and silicon, and a driving factor that the Gibbs free energy of amorphous silicon is greater than that of crystalline silicon, and due to absorption of the amorphous silicon by the molten catalyst particles to form a supersaturated silicon eutectoid, the silicon nucleates and grows into silicon-based nanowires. Moreover, during the growth of the silicon-based nanowire, the amorphous silicon film grows linearly along guide slots under the action of the catalyst particles, and reverse growth of the silicon-based nanowire is restricted by the retaining walls, thus obtaining silicon-based nanowires with a high density and high uniformity. Furthermore, by controlling the size of the catalyst particles and the thickness of the amorphous silicon film, the width of the silicon-based nanowire may also be controlled.

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