Emissive highway markers
    42.
    发明授权
    Emissive highway markers 失效
    发射高速公路标记

    公开(公告)号:US07273328B2

    公开(公告)日:2007-09-25

    申请号:US10947053

    申请日:2004-09-22

    IPC分类号: E01F9/00

    CPC分类号: E01F9/559

    摘要: A highway marker and vehicle mounted detection system in which the highway marker includes LEDs of different colors that can be selected under different conditions, and non-visible light LEDs for transmitting information to passing vehicles and between highway markers.

    摘要翻译: 高速公路标记和车载检测系统,其中高速公路标记包括可在不同条件下选择的不同颜色的LED,以及用于将信息传输到通过的车辆和公路标记之间的不可见光LED。

    Growth of bulk single crystals of aluminum nitride: silicon carbide
alloys
    46.
    发明授权
    Growth of bulk single crystals of aluminum nitride: silicon carbide alloys 有权
    氮化铝块状单晶的生长:碳化硅合金

    公开(公告)号:US6086672A

    公开(公告)日:2000-07-11

    申请号:US169400

    申请日:1998-10-09

    IPC分类号: C30B25/00

    CPC分类号: C30B25/00 C30B29/36

    摘要: Bulk, low impurity aluminum nitride:silicon carbide (AlN:SiC) alloy single crystals are grown by deposition of vapor species containing Al, Si, N and C on a crystal growth interface.

    摘要翻译: 散装的低杂质氮化铝:通过在晶体生长界面上沉积含有Al,Si,N和C的蒸汽物质来生长碳化硅(AlN:SiC)合金单晶。

    Production of bulk single crystals of aluminum nitride, silicon carbide
and aluminum nitride: silicon carbide alloy
    47.
    发明授权
    Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy 有权
    生产氮化铝,碳化硅和氮化铝的单体单晶:碳化硅合金

    公开(公告)号:US6063185A

    公开(公告)日:2000-05-16

    申请号:US169401

    申请日:1998-10-09

    摘要: Low defect density, low impurity bulk single crystals of AlN, SiC and AlN:SiC alloy are produced by depositing appropriate vapor species of Al, Si, N, C on multiple nucleation sites that are preferentially cooled to a temperature less than the surrounding surfaces in the crystal growth enclosure. The vapor species may be provided by subliming solid source material, vaporizing liquid Al, Si or Al--Si or injecting source gases. The multiple nucleation sites may be unseeded or seeded with a seed crystal such as 4 H or 6 H SiC.

    摘要翻译: AlN,SiC和AlN:SiC合金的低缺陷密度,低杂质体单晶是通过在多个成核位置沉积合适的Al,Si,N,C的蒸汽种类而制备的,优选冷却至低于周围表面的温度 晶体生长壳。 可以通过升华固体源材料,蒸发液体Al,Si或Al-Si或注入源气体来提供蒸汽种类。 多个成核位点可以用诸如4H或6H SiC的晶种未封装或接种。